VSMB1940X01 Search Results

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

C21445

Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH, Released for Lead Pb -free Solder Process, AEC-Q101 Released FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION

VSMB1940X01

Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power

Contextual Info: VSMB1940X01 Vishay Semiconductors 高速赤外線 940 nm 発光ダイオードGaAIAs 二重ヘテロ（DH） 特徴 • パッケージタイプ：表面実装 • パッケージ形態：0805 • 寸法（長さ x 幅 × 高さ 単位：mm） ：2 x 1.25

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

VSMB1940X01

Abstract: J-STD-020
Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

TFBS2711

Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
Contextual Info: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

Contextual Info: TEMT7100ITX01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Enhanced operating temperature range: 

HAND DRYER CIRCUIT DIAGRAM

Abstract: TSSP77P38 IR SENSOR HAND DRYER CIRCUIT elevator Door proximity sensor faucet Urinal SENSOR CIRCUiT
Contextual Info: TSSP77P38 www.vishay.com Vishay Semiconductors IR Detector for Mid Range Proximity Sensor FEATURES • Up to 2 m for proximity sensing • Very low supply current • Photo detector and preamplifier in one package • Shielding against EMI • Supply voltage: 2.5 V to 5.5 V

Contextual Info: TEMT7000X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity

TSSP4038

Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

NPN TEMT7000X01

Abstract: phototransistor 500-600 nm TEMT7000X01 J-STD-020D VSMB1940X01 radiation sensors
Contextual Info: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

Contextual Info: TEMT7100X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • Package type: surface mount Package form: 0805 Dimensions L x W x H in mm : 2 x 1.25 x 0.85 AEC-Q101 qualified High photo sensitivity

Contextual Info: TSSP57P38 www.vishay.com Vishay Semiconductors IR Detector for Mid Range Proximity Sensor FEATURES • Height of 0.8 mm • Up to 2 m for proximity sensing • Receives 38 kHz modulated signal • 940 nm peak wavelength • Photo detector and preamplifier in one package

Contextual Info: TSSP6P38 www.vishay.com Vishay Semiconductors IR Mid Range Proximity Sensor FEATURES • Up to 2 m for proximity sensing • Receives 38 kHz modulated signal • 940 nm peak wavelength • Photo detector and preamplifier in one package 1 2 3 • Low supply current

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900

TEMT7100X01

Abstract: J-STD-020D VSMB1940X01
Contextual Info: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,

Contextual Info: TSSP57P38 www.vishay.com Vishay Semiconductors IR Detector for Mid Range Proximity Sensor FEATURES • Height of 0.8 mm • Up to 2 m for proximity sensing • Receives 38 kHz modulated signal • 940 nm peak wavelength • Photo detector and preamplifier in one package

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radiant Intensity up to 65 mW/sr Infrared Emitters 940 nm High-Speed, High-Power Emitters with High Radiant Intensity, Tight Angular Distribution of Emitted Light and Power

Contextual Info: Vishay Intertechnology, Inc. INFRARED EMITTERS AND PHOTO DETECTORS 0.6 mm SIDE VIEW Length: 3.0 mm Width: 2.0 mm Height: 0.6 mm 25º / 35º GULLWING AND REVERSE GULLWING Length: 2.3 mm Width: 2.3 mm Height: 2.55 mm 1.0 mm SIDE VIEW Length: 3.0 mm Width: 2.0 mm

Contextual Info: CONTROL KNOBS BACKLIT INSTRUMENT PANEL Ambient Light Sensors TCPT1600X01 and TCUT1600X01 Turn and Push Transmissive Sensor MAP LIGHTS NIGHT VISION VSMY98545 SurfLight Infrared Surface Emitter VCNL4020X01 Integrated Proximity and Ambient Light Sensor PLCC2 Plus LED

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents