PHOTOSENSITIVE Search Results

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS (E9087) en Cathode lead CD O GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

S9032-02

Abstract: photodiode s9032-02 green light photodiode sensor photo ic S11012-01CR
Contextual Info: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensitive area of φ2 mm.

s10917-35gt

Abstract: 35GT s10917 LX 590 PF
Contextual Info: Si photodiode S10917-35GT RGB color sensor integrated in small and thin package The S10917-35GT is a compact color sensor with a 3-channel photodiode mounted in one package, and sensitive to red λ=590 to 680 nm , green (λ=470 to 600 nm) and blue (λ=390 to 530 nm) light. An infrared-cut filter is formed on the photosensitive

EUDYNA

Abstract: STM-16
Contextual Info: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

150AVP

Abstract: caesium 56AVP Photocathode 56DUVP 150CVP 150UVP 56TVP 56TUVP XP1017
Contextual Info: Photosensitive devices photomultipliers Type No. book 2 part 3 Photocathode Diameter Surface mm Description Av. A nod e Sensitivity Sensitivity at Vb (A/lm) <kV) Cathode Sensitivity No. of Stages (/iA/lm) Time Characteristic Rise Time (ns) 250 1.8 65 10

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

Contextual Info: MPPC modules C11202 series Single pixel photon counting module for low-light-level detection The C11202 series is a single-photon counting module capable of detecting low light levels. The C11202 series is made up of a single-pixel thermoelectrically cooled MPPC, a signal amplifier circuit, a comparator circuit, a high-voltage power supply circuit, and a temperature control circuit. The photosensitive area is available in two sizes of ϕ50 m and ϕ100 μm, and

Selection guide

Abstract: Photo IC S10604 S11059-01WT
Contextual Info: Selection guide - March 2015 Photo IC Sophisticated sensors integrated with photosensitive element and signal processing circuit HAMAMATSU PHOTONICS K.K. Photo IC The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package.

LM 012/14

Contextual Info: Head-on PMT Photosensor Modules H10493 Series The H10493 series photosensor modules incorporate a 28 mm 1-1/8" diameter head-on photomultiplier tube, a high voltage power supply, and a low noise amplifier. Since it has a wide photosensitive area of 25 mm diameter,

Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,

49/S12572-050C

Contextual Info: MPPC multi-pixel photon counter S12572-025, -050,-100C/P Low afterpulse, for general measurement Photosensitive area: 3 x 3 mm The S12572 series are general-purpose MPPC with drastically reduced afterpulses compared to our previously marketed products. By widening the operating voltage range and improving the time resolution and photon detection efficiency, the

BPX92

Abstract: Bpx 95 photodetector 850 nm aa3b
Contextual Info: SIEMENS BPX92 SILICO N PHOTODIODE Package D im ensions in Inches mm Chip position FEATURES * Silicon Planar Photodiode * Transparent Plastic C a se Photosensitive area 051 x 031 (1 3 x 8) ' * 0.2* (S.08 mm) Lead Sp ac in g 0 1 6 (4 ) 006 ( 2) • Low D ark Current, 1 n A

4502 C

Abstract: 1500-nm
Contextual Info: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD500-TO The 35PD500-TO, an InGaAs photodiode with a 500um-diameter photosensitive packaged in a TO-46 header, is a versatile device with applications in high sensitivity instrumentation, laser back-facet monitoring, and low-bit-rate telecomm and datacomm transmission. Planar semiconductor design and

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

GEO06861

Abstract: Q62702-P1605
Contextual Info: Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BP 104 S 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.6 ±0.2 Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

RPM6933

Contextual Info: Communication ICs Remote control photosensitive 1C RPM6900 Series The RPM6900 series are remote control photosensitive units in a compact, lightweight package made from a resin mold. Applications RPM6900 series models VCRs, TVs, movies, air conditioners, audio equipment,

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75-ST, -SMA, -FC, -SC The 13PD75-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high speed and low noise

InGaAs photodiode TO-46

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75-TO The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header, is intended for high speed and low noise applications. The diameter of the photosensitive region is

Contextual Info: RPM-600CBR series Remote controlled photosensitive IC This small size single-chip lightweight molded 1C is used to detect light from a remote source. It is molded in plastic. Dimensions Units : mm RPM-600CBR-L Features (l)(2)(3 ) • compact and light plastic package

C4674-01

Abstract: S5990-01 S5991-01
Contextual Info: Two-dimensional PSD S5990-01, S5991-01 Improved tetra-lateral type for surface mounting Features Applications Large photosensitive area S5990-01: 4 x 4 mm S5991-01: 9 × 9 mm Light spot detection Pointing device computer mouse, track-ball Position measurement

InGaAs pin photodiode 1Ghz

Abstract: TELCOM 13PD100-TO
Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest standard device enabling a 1GHz frequency cutoff. Planar semiconductor

photodiode responsivity 1550nm 2

Abstract: TO-5 header 1550nm photodiode Photodiode, TO-5 Photodiode, 1550nm 1300nm-1550nm InGaAs Photodiode 1550nm
Contextual Info: Large Area InGaAs p-i-n Photodiode 35PD2M-TO The 35PD2M-TO, an InGaAs photodiode with a 2mm-diameter photosensitive region and packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Low dark current and high dynamic impedance are featured. Reliability is assured by