PHOTODIODES GERMANIUM Search Results

Photodiodes

Abstract: 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015
Contextual Info: Chpt. 49 Final 10/11/99 11:34 AM Page 49.2 Laser-Beam Characterization Available in: ✔ Production Quantities ✔ Custom Configurations Silicon Photodiodes Photodiodes, Integrating Spheres & Amplifiers UNMOUNTED SILICON PHOTODIODES Single-element planar-diffused silicon photodiodes are ideal

J16A-18A-R100U

Abstract: J16A
Contextual Info: J16A Ge Avalanche Photodiodes APDs (0.8 to 1.5 pm) judson _•!. Description Multiplication Characteristics The J16A series Germanium Ava­ lanche Photodiodes are designed for high-speed applications at 800 and 1300 nm. Judson APDs offer low dark currents

PDINP075ST83-W-0

Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
Contextual Info: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed

laser range finder schematics

Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series

Contextual Info: J ^ E G z G JU D S O N Ge Avalanche Photodiodes APDs 0.8 to 1.5 urn Description Multiplication Characteristics The J16A series Germanium Ava­ lanche Photodiodes are designed for high­ speed applications at 800 and 1300 nm. Judson APDs offer low dark currents and

BD 509 CONNECTOR

Abstract: PDINP075100A Flexcore PDINP075500A-0-0-01
Contextual Info: PD LD Inc PDINP Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from

ia2c

Contextual Info: MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES FOR OPTICAL COMMUNICATION MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi H M I T S " 31E » \ -0 7 • ‘T ' M P D 8001, PD 8931 DESCRIPTION FEATURES The PD8XXÎ series are InGaAs avalanche photodiodes de­ •

Photodiodes Germanium

Abstract: T05 Package T018
Contextual Info: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger­ manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared

T018

Contextual Info: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger­ manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared

PD7005

Abstract: PD7035 PD7935
Contextual Info: MITSUBISHI InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC tj24ciô2ci G o m a a s s h i m i t s h 31E D SERIES FOR OPTICA L COMMUNICATION " T TYPE NAME - q i - c r ? PD7005, PD7035, PD7935 FEATURES DESCRIPTION M itsubishi PD7XX5 series are InGaAs photodiodes de­

Contextual Info: M IT S U B IS H I InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC 31E B ì> SERIES tj24cl ñ 2 ci GGIMEBR ^ HIMITS FOR O P T IC A L C O M M U N IC A TIO N j "T-m-cn TYPE NAME PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de­

Germanium Power Devices

Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Contextual Info: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)

Contextual Info: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency

germanium power devices corporation

Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Contextual Info: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■

GM7VHR

Contextual Info: Germanium Photodetector Large Area Ge. Photodiodes Special Options: ● Thermal-Electric Coolers ● Custom Devices and Packaging ● Active Mounts /Ceramic Substrates ● Two-Colors ● Neutral Density Filters ● Amplified Devices Electrical Characteristics @ 25°C

16C70

Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Contextual Info: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior

IGA-010

Abstract: G-010 S-010 S-025 S-050 S-050UV IGA-030 IGA-010 detector g030 TO5 packages
Contextual Info: Detector Components EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Material Si Ge InGaAs InGaAsSb Diodes operating at room temperature or TE cooled

L1116

Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
Contextual Info: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con­ sists of tw o Bismuth Germanium Oxide

J16-5SP-R02M-SC

Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
Contextual Info: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.

J16D

Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Contextual Info: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.

Ir photodiodes gav40

Abstract: GAV40 GPD optoelectronics photodetectors avalanche photodiodes IR photodetectors GAV100 GAV30 Germanium Power Devices TO46 package high-speed
Contextual Info: GPD GAV30 GAV40 GAV100 OPTOELECTRONICS CORP. Ge Avalanche Photodiodes • OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers GPD Optoelectronics Corp. GAV30 GAV40 GAV100 CC Electrical Characteristics @ 25 °C

germanium photodiode PIN

Abstract: PIN-DSS Ge dual photodiode ir thermo sensor photodiode ge "Thermoelectric Cooler"
Contextual Info: DUAL SANDWICH DETECTOR SERIES TWO COLOR PHOTODIODES APPLICATIONS FEATURES • Flame Temperature sensing • Spectrophotometer • Dual-wavelength detection • IR Thermometers for Heat • Compact • Hermetically Sealed • Low Noise • Wide Wavelength Range

Avalanche photodiode APD

Abstract: germanium photodiode PIN photodiode germanium photodiode "interference filter" Photodiodes Germanium receiver photodiode preamplifier AGC photovoltaic receiver 1550 pin Photodiode preamp avalanche photodiodes PREAMP circuit diagram
Contextual Info: APPLICATIONS OPTOELECTRONICS Joachim Krug PIN photodiodes with transimpedance amplifiers for optical networks: Compact pre-amp modules immune to interference The first amplifier stage of a receiver circuit in optical networks is usually a transimpedance amplifier. It has

GAP100

Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
Contextual Info: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300