PHOTODIODE DARK CURRENT Search Results
PHOTODIODE DARK CURRENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
PHOTODIODE DARK CURRENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Hamamatsu S1133
Abstract: S1087 S1133-01 S1133-14 near IR photodiodes photodiode application illuminometer S1087-01 S1133 stroboscop
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S1087/S1133 S1087, S1133 S1087-01, S1133-01: S1133-14 SE-171 KSPD1039E01 Hamamatsu S1133 S1087 S1133-01 S1133-14 near IR photodiodes photodiode application illuminometer S1087-01 S1133 stroboscop | |
Hamamatsu S1133
Abstract: S1087 S1087-01 S1133 S1133-01 S1133-14
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S1087/S1133 S1087, S1133 S1087-01, S1133-01: S1133-14 SE-171 KSPD1039E01 Hamamatsu S1133 S1087 S1087-01 S1133 S1133-01 S1133-14 | |
S1787
Abstract: S1787-04 S1787-08 S1787-12
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S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 S1787-04 S1787-08 S1787-12 | |
S1787
Abstract: S1787-04 S1787-08 S1787-12
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S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 S1787-04 S1787-08 S1787-12 | |
Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide |
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S1787 S1787-04: S1787-08: S1787-12: SE-171 KSPD1038E01 | |
Contextual Info: PHOTODIODE Si photodiode S1087/S1133 series Ceramic package photodiode with low dark current S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide |
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S1087/S1133 S1087, S1133 S1087-01, S1133-01: S1133-14 SE-171 KSPD1039E01 | |
AM 5888
Abstract: g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01
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G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01 | |
AM 5888
Abstract: G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118
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G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118 | |
ASDL-5770
Abstract: ASDL-5770-D22 ASDL-5770-D31
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ASDL-5770 ASDL-5770 700nm 1100nm ASDL-5770-D22 ASDL-5770-D31 | |
G5842
Abstract: G5645 G6262 G7189 KGPDA0012EA
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G5645 G5842 G6262 G7189 SE-171 KGPD1004E01 G5842 G5645 G6262 G7189 KGPDA0012EA | |
ASDL-5770
Abstract: ASDL-5770-D22 ASDL-5770-D31
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ASDL-5770 ASDL-5770 700nm 1100nm AV02-0021EN ASDL-5770-D22 ASDL-5770-D31 | |
1C12
Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
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TPA-1C12 1300nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1C12 TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm | |
AN 5270
Abstract: PIN photodiode 850nm ASDL-5270 ASDL-5270-D22 ASDL-5270-D31
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ASDL-5270 ASDL-5270 700nm 1100nm AV02-0010EN AN 5270 PIN photodiode 850nm ASDL-5270-D22 ASDL-5270-D31 | |
LA12
Abstract: SLD-70C1 SLD-70C1A SLD-70C1B SLD-70C1C SLD-70C1D SLD-70C1E
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SLD-70C1 SLD-70C1 QF-84 25mW/cm2 100mV, LA12 SLD-70C1A SLD-70C1B SLD-70C1C SLD-70C1D SLD-70C1E | |
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1E13
Abstract: TPD-1C12-011
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TPD-1C12-011 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1E13 TPD-1C12-011 | |
Contextual Info: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1 |
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TPD-1C12-000 1300nm 850nm 1E-10 1E-11 1E-12 1E-13 350x350 | |
pin InGaAs chip
Abstract: pin 1300nm
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TPD-1C12-002 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 pin InGaAs chip pin 1300nm | |
SLD-70C2A
Abstract: LA12 SLD-70C2 SLD-70C2B SLD-70C2C SLD-70C2D SLD-70C2E
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SLD-70C2 25mW/cm2 100mV, SLD-70C2A LA12 SLD-70C2 SLD-70C2B SLD-70C2C SLD-70C2D SLD-70C2E | |
PIN 1300nm
Abstract: TPD-1C12-001 1E13 InGaas PIN photodiode chip
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TPD-1C12-001 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 PIN 1300nm TPD-1C12-001 1E13 InGaas PIN photodiode chip | |
ASDL-5771
Abstract: ASDL-5771-D22 ASDL-5771-D31
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ASDL-5771 ASDL-5771 700nm 1100nm ASDL-5771-D22 ASDL-5771-D31 | |
IR remote control
Abstract: ASDL-5772 ASDL-5772-D22 ASDL-5772-D31 PIN Photodiode side look
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ASDL-5772 ASDL-5772 700nm 1100nm IR remote control ASDL-5772-D22 ASDL-5772-D31 PIN Photodiode side look | |
ASDL-5771
Abstract: ASDL-5771-D22 ASDL-5771-D31 940nm spectral bandwidth IR DETECTOR 940nm ASDL
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ASDL-5771 ASDL-5771 700nm 1100nm AV02-0022EN ASDL-5771-D22 ASDL-5771-D31 940nm spectral bandwidth IR DETECTOR 940nm ASDL | |
ASDL-5772
Abstract: ASDL-5772-D22 ASDL-5772-D31 PIN Photodiode side look
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ASDL-5772 ASDL-5772 700nm 1100nm AV02-0023EN ASDL-5772-D22 ASDL-5772-D31 PIN Photodiode side look | |
Contextual Info: TPD-1C12-013 InGaAs PIN photodiode chip FEATURES: • Optimized for monitor application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Fig. 1 R ID VBD C |
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TPD-1C12-013 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 500x500 |