PHOTOD Search Results

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

TCD1200D

Abstract: TCD1200 TCD-12
Contextual Info: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution

TLP582

Abstract: 1119a
Contextual Info: GaAßAs IRED TLP582 a PHOTO-IC Unit in mm HOS FET GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaAiAs light emitting 1 8 .9 ± 0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

TCD120AC

Contextual Info: TCD120AC The TCD120AC is a contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 4800 photodiodes which provide a A00 dots/inch resolution across an A3 size paper. By the aid of analog line memories fabricated

Contextual Info: TLP251 GaAGAs IRED & PHOTO-IC TLP251 INVERTER FOR A IR CO NDITIO NO R INDUCTION HEATING TRANSISTOR INVERTER P O W E R M O S FET GATE DRIVE IGBT GATE DRIVE The Toshiba T L P2 5 1 consists of a G a A f A s lig h t em itting diode and a integrated photodetector.

TC17G

Abstract: Photodiode Array 32 element tcd storage gate ccd TCD128AC
Contextual Info: TCD128AC The TCD12P.AC is a contact type CCD linear image sensor. The device is consist of 4 CCD chips which are collinearly arranged. The device contains a row of 1728 photodiodes which provides a 8 dots/mm resolution across A4 size 216mm document. And this device includes

tlp250f

Contextual Info: TLP250F INV TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TLP250F(INV) Transistor Inverters Inverter for Air Conditioners IGBT Gate Drivers Power MOSFET Gate Drivers Unit: mm The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an

driver photodiode tia

Abstract: TOSA model
Contextual Info: Preliminary Data Sheet May 2004 RQP1001 10 Gb/s PIN-TIA ROSA Description The RQP1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s PIN photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed

AGILENT A 1610 OPTICAL

Contextual Info: Preliminary Data Sheet May 2004 RQA1001 10 Gb/s APD-TIA ROSA Description The RQA1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s APD photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed

Q62702P0956

Abstract: sfh203fa SFH203 RoHS SFH203
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)

DL5551P2

Abstract: NDL5516PC
Contextual Info: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high

Contextual Info: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both

TEFD4300

Abstract: APPLICATION CIRCUIT OF TSAL4400
Contextual Info: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times

Contextual Info: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications

Contextual Info: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional

Contextual Info: Agilent HSDL-9100 Miniature Surface-Mount Proximity Sensor Data Sheet Features • Excellent optical isolation resulting in near zero optical cross-talk • High efficiency emitter and high sensitivity photodiode for high signal-to-noise ratio • Low cost & lead-free miniature

Contextual Info: TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity

pn photodiode

Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity

Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm

PP403

Contextual Info: PP403 Through-hole PIN Photodiode/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Flat Lenz type ・High Photo Current : 1.5 A TYP. VR=5V,Ee=0.5mW/cm2 ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength

FP-Laser-Diode

Abstract: 10 gb laser diode UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TJ-SXCMI -01 Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

PIN Photodiode 1550nm

Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

PRBS23

Abstract: 25gbps pin-tia pxxx PIN-TIA
Contextual Info: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 5V T-11-2500-R/P-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+5V operation • -40 to 85ºC operating temperature