PHOTO TRANSISTOR CURRENT TO VOLTAGE Search Results

TLP507

Abstract: TLP507A
Contextual Info: TO SH IBA TLP507A TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP507A HIGH-POWER AMPLIFIER APPLICATIONS AUTOMATIC CONTROL UNITS POSITION AND ROTATIONAL SPEED SENSORS The TLP507A photo-interrupter features a high current transfer ratio 1^;/Ijr .

Contextual Info: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 A typ. Condition : White LED, 100Lux 3. Lead pin package APPLICATIONS

NJL7502L

Abstract: njl7502
Contextual Info: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 A typ. Condition : White LED, 100Lux 3. Lead pin package APPLICATIONS

NJL7502L

Contextual Info: NJL7502L Ambient Light Sensor „ GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. „ FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 µA typ. Condition : White LED, 100Lux 3. Lead pin package

njl7502

Abstract: NJL7502L FAP-I
Contextual Info: NJL7502L W r t.« # Ambient Light Sensor • GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. ■ ■ FEATURES 1. Peak wavelength 560 nm 2. Photo current 3. Lead pin package 33pAtyp. Condition : White LED, 100Lux

K 2645 transistor

Abstract: TRANSISTOR K 2645 transistor MOC8030 MOC8050 MOTOROLA OPTOELECTRONIC K 2645 schematic
Contextual Info: MOC8050 MOC8030 80-VOLT OPTOELECTRONIC COUPLER . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephony relay drivers but provides excellent

Contextual Info: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current

MM-222

Abstract: photo flash capacitor
Contextual Info: AMOS TECHNOLOGY LIMITED R2a MM222 LIGHT-SENSE WITH LED DRIVER by external photo transistor DATA SHEET FEATURES • • • • • • • Wide battery operating voltage range : 2.4V to 5.1V. Typical operating current : 100uA, VDD = 3.0V. Flashing LED upon valid detection

TRANSISTOR D 2627

Abstract: 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324
Contextual Info: 4N29,4H29A 4H30 4H31 4N32.4N324 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical, isolation, high-current transfer ratios, small package size and low

Contextual Info: AMOS TECHNOLOGY LIMITED R4a MM216 LIGHT-SENSE ASIC by external photo transistor DATA SHEET FEATURES • • • • • • • • Wide battery operating voltage range : 3.3V to 5.1V. Typical operating current : 150uA, VDD = 4.5V. Trigger pulse with controlled width on valid detection

omron Ly 2

Abstract: EE-SY201
Contextual Info: omRon EE-SY201 Low-cost Reflective PhotoDarlington Output Requires Low Driving Input • Only 5-mA forward current required by the LED ■ Best suited to drive CMOS IC ■ Incorporating an LED emitter and Photo-Darlington Transistor receiver Ordering Information

optical detector

Abstract: EE-SY201 IR object DETECTOR
Contextual Info: Photomicrosensor EE-SY201 Reflective Dimensions Note: Features All units are in millimeters unless otherwise indicated. • The LED requires a forward current of only 5 mA due to the Photo-Darlington transistor built into the detector. • With a red LED light source.

Contextual Info: TO SHIBA TPS616 TOSHIBA PHOTO TRANSISTOR • ■ SILICON NPN EPITAXIAL PLANAR MF FLOPPY DISK DRIVE VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT OPTO-ELECTRONIC SWITCH • ^ 3.1mm epoxy resin package, black • Light current • Half value angle : 6 i= +30° (TYP.)

ge 4n25

Abstract: a4N26 2N27 4N25 application notes ge 4n26 4N25A VLS07 4N26 4N27 4N28
Contextual Info: 4N25, 4N25A 4N26 4N27 4N28 o NPN PHOTOTRANSISTOR PN INFRARED EMITTING AND DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Transistor designed for applications requiring electrical isolation, high-current transfer ratios, small package size and low cost; such as interfacing and coupling svstems, phase and

TRANSISTOR SMD MARKING CODE p1

Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )

TRANSISTOR DNH

Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

Contextual Info: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450x Series Schematic 6N135 / 6N136 Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

Contextual Info: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )

DIODE PP602

Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

transistor circuit

Abstract: 357 photo
Contextual Info: O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode GaAs LED and a light receiving silicon photo transistor. FEATURES • Current transfer ratio: 20% min. • Isolation voltage: 1,000 V min.

cd photo detector

Contextual Info: Sensors Sensors Sensors •Em itters 1 Infrared LEDs 1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the poten­

Contextual Info: Sensors Sensors Sensors FEmitters 1 Infrared LEDs (1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the potential barrier will

MOC3040 equivalent

Abstract: MOC3043 equivalent H21A1 PINS MOC3031 equivalent MOC3040 and applications H22B1 equivalent ISP817 IS606 moc3040 ISP521-1
Contextual Info: PHOTO TRANSISTOR General Purpose 4 and 6 Pin Packages; 6 Pin DIP - Safety Approvals: UL, CSA, VDE 0884, BSI, NEMKO, DEMKO, SEMKO, and FIMKO *Note 1 Part Number Features H24A1 Current Transfer Ratio IF = 10mA Min % Isolation Test Voltage (KV) Continuous Forward

Contextual Info: CA424 DC-DC CONVERTER > Low power The CA424 is a low power, high efficiency dc - d c Converter. It can operate from single battery cell voltages as low as 0.9 volts. Only five external components are required. The I.C. consists of a temperature compensated voltage