PHILIPS TOP MARKING Search Results

Contextual Info: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION

Contextual Info: Philips Components Product specification Aluminum Electrolytic Capacitors Series 2222-056 FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, minimized dimensions, cylindrical aluminium case, insulated with a blue sleeve • Pressure relief on the top of the

E2p device marking

Abstract: BFS17 BFS17A
Contextual Info: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION

marking FR PNP SOT323

Abstract: BF824W
Contextual Info: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323

smd code A1t

Abstract: A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN PMBD2835 PMBD2836 marking H01 a1t MARKING
Contextual Info: Philips Semiconductors Product specification High-speed double diodes FEATURES PMBD2835; PMBD2836 MARKING • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively PINNING MARKING CODE

up/xr+2320

Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR

BFG92AW

Abstract: transistor marking P8
Contextual Info: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR

SL 100 NPN Transistor

Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
Contextual Info: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures

transistor marking MTs ghz

Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Contextual Info: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.

3H2 philips

Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Contextual Info: Philips Semiconductors Product specification BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG197W V5 • Gold metallization ensures excellent reliability. BFG197W/X V8 BFG197W/XR

UHF transistor GHz

Abstract: BFG93AW DD44 pa 4010
Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X

OF IC 7909

Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Contextual Info: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE

smd code marking v8 sot23

Abstract: philips marking 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification 2002 Aug 06 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 MARKING • Low forward voltage • Small SMD package

A2 DIODE SMD CODE MARKING

Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD353 Schottky barrier double diode Product specification Supersedes data of 1999 May 25 2001 Oct 15 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD353 MARKING

smd code marking LF sot23

Contextual Info: Product specification Philips Semiconductors PMBD2837; PMBD2838 High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PINNING MARKING MARKING CODE

marking 3t1

Abstract: marking code HFr A2 diode smd marking code diode Eb SMD PMBD2837 PMBD2838 smd code marking LF sot23
Contextual Info: Philips Semiconductors Product specification High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PMBD2837; PMBD2838 MARKING PINNING MARKING CODE

1PS89SS04

Abstract: 1PS89SS05 1PS89SS06 SOT49
Contextual Info: DISCRETE SEMICONDUCTORS [Mm S^EET 1PS89SS04/05/06 High-speed double diodes P relim inary specification Philips Semiconductors 1998 Oct 30 PHILIPS Philips Semiconductors Preliminary specification High-speed double diodes FEATURES 1PS89SS04/05/06 MARKING • Improved power dissipation in

A2 DIODE SMD CODE MARKING

Abstract: MAM383 DIODE smd marking A1 smd diode A4 smd diode code A4 marking code 10 sot23 marking CODE R SMD DIODE SMD DIODE A4 data smd diode marking code smd diode marking code a2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode Product specification Supersedes data of 1999 May 05 2001 Oct 11 Philips Semiconductors Product specification High-speed double diode FEATURES BAV70 MARKING • Small plastic SMD package

diode smd marking jy

Abstract: BAV199
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAV199 Low-leakage double diode Product specification Supersedes data of 1999 May 11 2001 Oct 12 Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D793 PESDxS2UQ series Double ESD protection diode Product specification 2003 Dec 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UQ series FEATURES MARKING • Uni-directional ESD protection of two lines or

1PS89SS04

Abstract: 1PS89SS05 1PS89SS06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SS04/05/06 High-speed double diodes Preliminary specification 1998 Oct 30 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04/05/06 MARKING FEATURES • Improved power dissipation in

smd diode schottky code marking 63

Abstract: BYR210 BYR29 smd diode schottky code marking 1A BYR28 PBYR2100CT PBYR280CT PBYR290CT smd diode schottky code marking 37 Philips marking code sot223
Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES PBYR2100CT series PINNING • Low switching losses MARKING DESCRIPTION PIN TYPE NUMBER MARKING CODE • High breakdown voltage 1 anode a-0 • Fast recovery time 2 common cathode

BFG505W

Abstract: MLC040
Contextual Info: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures

m lc 945

Abstract: transistor 9206 BFG590W marking code 3T3
Contextual Info: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures