PHILIPS T AN SOT23 Search Results
PHILIPS T AN SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
PHILIPS T AN SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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phototransistor philips
Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
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711002b 003D54Ã SL5582/SL5583 SL5582 SL5583 phototransistor philips 004583 BS415 BS7002 diode ja diode Optocouplers MBB038 | |
philips vhf uhf tuner
Abstract: BF747 SC14 Marking 2 sot23 marking code transistor 63E tuner uhf Ghz marking code TS TS SOT23
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BF747 BF747 philips vhf uhf tuner SC14 Marking 2 sot23 marking code transistor 63E tuner uhf Ghz marking code TS TS SOT23 | |
Contextual Info: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm |
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bfl51 OT212. 74bbflSl 0DD4fl03 MSA048-2 | |
Contextual Info: • bbS3T31 Q0H433R 1S6 * A P X N AMER PHILIPS/DISCRETE BAT54 b?E T> SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a micro miniature SOT-23 envelope intended fo r surface mounting. The diode features especially a low forward voltage. |
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bbS3T31 Q0H433R BAT54 OT-23 | |
44t transistor
Abstract: Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569
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BF569 OT-23 44t transistor Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569 | |
transistor AY PNP smd
Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
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PDTA114EEF MAM413 115002/00/02/pp8 transistor AY PNP smd marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG | |
st smd diode marking code VU
Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
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BAS40, BAS40-04, BAS40-05 BAS40-06 BAS40-07 OT143B 115002/00/04/pp8 st smd diode marking code VU SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23 | |
bf862Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in |
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BF862 MSB003 bf862 | |
demultiplexer latch "intervening bit"
Abstract: BAS101 BAS101S
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BAS101; BAS101S BAS101 BAS101 BAS101S demultiplexer latch "intervening bit" | |
PESDxU1UT
Abstract: pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12
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O-236AB) PESDxU1UT pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12 | |
PESD1CAN
Abstract: PESD1CAN_2
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spice germanium diode
Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
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OT143 SC-59 SC-70 SC-88 SC-75 OT223 BD839. O-202 spice germanium diode SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100 | |
DIODE SMD 10A
Abstract: BAA SMD CODE MARKING smd marking code KN BAS55 smd code marking LF sot23
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BAS55 BAS55 010AS20 DIODE SMD 10A BAA SMD CODE MARKING smd marking code KN smd code marking LF sot23 | |
10j smd diode
Abstract: BAS678 marking ATB
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BAS678 BAS678 7110a2L. D10flS33 10j smd diode marking ATB | |
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MCD228
Abstract: PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi
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PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308: PMBFJ309: PMBFJ310: MCD226 MCD228 PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi | |
smd diode a6P
Abstract: A6P SMD marking a6p
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BAS16 BAS16 smd diode a6P A6P SMD marking a6p | |
smd code marking WV
Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
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PESD5V0S2BTContextual Info: PESD5V0S2BT Low capacitance bi-directional double ESD protection diode in SOT23 package Rev. 02 — 27 May 2004 Product data sheet 1. Product profile 1.1 General description Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic |
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IEC-61000-4-5 PESD5V0S2BT | |
Contextual Info: Philips Semiconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching • High switching speed: max. 4 ns diode fabricated in planar technology, and encapsulated in the small SOT23 |
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BAL99 BAL99 | |
Contextual Info: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor BSH202 FEATURES PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain |
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BSH202 | |
BSH103
Abstract: transistor SMD g 28
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BSH103 BSH103 transistor SMD g 28 | |
P5D SMDContextual Info: Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Small plastic SMD package The PMBD914 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns |
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PMBD914 PMBD914 BD914 P5D SMD | |
Contextual Info: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 |
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BAS55 BAS55 wit25 | |
BSH103
Abstract: smd transistor GD
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BSH103 BSH103 smd transistor GD |