PHILIPS ID 35 Search Results

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

Contextual Info: Philips Semiconductors Product specification FLEX Pager Decoder PCD5008 CONTENTS 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)

Contextual Info: N AMER PHILIPS/DISCRETE b lE D ^ 5 3 1 3 1 D0307,:iD 3Tfi « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

1000 v fast recovery rectifier diodes

Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Contextual Info: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

IRF640 smd

Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A

PHW50NQ15T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW50NQ15T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 50 A

PSMN030-150P

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

PSMN040-200W

Abstract: PSMN040200W
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A

PSMN057-200B

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

PSMN025-100D

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN025-100D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 47 A

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are

T150

Contextual Info: PHILIPS DCG 6/6000 G r id -c o n tro lle d MERCURY VAPOUR RECTIFYING VALVS TUBS R2DR2S33UR A VAP3UR D3 M2RCURE & g r i l l e G itt e r g e s t e u e r t e GL3ICHRICHT3RRÖHR3 MIT QÜ3CE3IL33RDAMPFFULLUNG Filam ent : o x id e -c o ate d Filam ent : oxyde H eizfad en : Oxyd

74LVT162244B

Abstract: SSOP48
Contextual Info: Philips Semiconductors Product specification 7A. w-riCOo/i/iD 3.3V 16-bit buffer/driver with 30£2 termination resistors 3-State 74LVT162244B FEATURES DESCRIPTION • 16-bit bus interface The 74LVT162244B is a high-performance BiCMOS product designed for V qc operation at 3.3V.

PHX3055E

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX3055E SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Isolated mounting tab d VDSS = 55 V ID = 9 A g RDS ON ≤ 150 mΩ (VGS = 10 V)

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

transistor marking MTs ghz

Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Contextual Info: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.

9632 transistor

Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
Contextual Info: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.

Contextual Info: bbS3T31 Q02bS73 TT2 » A P X bTE B N AUER PHILIPS/DISCRETE BYD33D;G;J;K;M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in TV receivers and also

TAG 84 triac

Abstract: triac BT 140 TRIAC BT 139 TRIAC TAG 90 bt139 BT139G TRIAC TAG 96 bt139 Application BT139 Series E M1646
Contextual Info: PHILIPS INTERNATIONAL bSE » B 711DÖSL 00L.2307 ITO I BT139 SERIES TRIACS Glass-passivated 1 6 am pere triacs intended fo r use in applications requiring high b id irectio n a l tran sien t and b locking voltage c a p a b ility , and high th erm al cycling perform an ce w ith very lo w th erm al resistances,

74ALVCH16823

Abstract: SSOP56 TSSOP56
Contextual Info: Philips Semiconductors Product specification 7AA. xrnu. aar o 18-bit bus-interface D-type flip-flop with reset and enable 3-State) 74ALVCH16823 FEATURES DESCRIPTION • W id e s u p p ly v o lta g e ra n g e o f 1 .2 V to 3.6 V T h e 7 4 A L V C H 1 6 8 2 3 is a 18 -bit e d g e -trig g e re d flip -flo p fe a tu rin g

74LV30

Abstract: 74LV30PW 74LV30D
Contextual Info: Philips Semiconductors Product specification 8-input NAND gate 74LV30 FEATURES DESCRIPTION • W id e o p e ra tin g v o lta g e : 1.0 to 5.5 V T h e 7 4 LV 30 is a lo w -v o lta g e S i-g a te C M O S d e v ic e a n d is pin an d fu n ctio n c o m p a tib le w ith 7 4 H C /H C T 3 0 .

k300k1

Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Contextual Info: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm

Dual-Gate Mosfet

Abstract: PHILIPS MOSFET MARKING 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 n channel depletion MOSFET 4466 8 pin mosfet pin voltage philips mosfet
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