PHILIPS ID 35 Search Results

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

BYD34D

Abstract: BYD34J BYD34G BYD34K BYD34M
Contextual Info: N AMER PHILIPS/DISCRETE h'lE D • Philips Semiconductors_ bh53^31 □0SbS7c1 410 ■ APX Maintenance type ~ not for new designs Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

Contextual Info: N A PIER PHILIPS/DISCRETE b^E bbS3^31 Q05bS7T 41Q H A P X D Maintenance type - not tor new designs Philips Semiconductors_ Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

BZD23

Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Contextual Info: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for

PXAC37KFA

Contextual Info: INTEGRATED CIRCUITS XA-C3 XA 16-bit microcontroller family 32K/1024 OTP/ROM CAN transport layer controller 1 UART, 1 SPI Port, CAN 2.0B, 32 CAN ID Filters, transport layer co-processor Preliminary specification Philips Semiconductors 1999 Dec 20 Philips Semiconductors

MGA018

Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Contextual Info: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and

Contextual Info: Philips Semiconductors Product specification FLEX Pager Decoder PCD5008 CONTENTS 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)

tl2417

Abstract: 8851 motorola flex protocol CV17 LQFP32 PCD5008 PCD5008H motorola flex pager 11
Contextual Info: Philips Semiconductors Product specification FLEX Pager Decoder CONTENTS PCD5008 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)

Contextual Info: N AMER PHILIPS/DISCRETE b lE D ^ 5 3 1 3 1 D0307,:iD 3Tfi « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

PHW35NQ20T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW35NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 35 A

BYD74E

Abstract: BYD74A BDY74A BYD74
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE J> m bbSB'iai DDEbbEO b4T • APX _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low

capacitor 27pf

Abstract: Capacitor RUBYCON CAPACITOR RUBYCON CAPACITOR 120 GRM188R71H102K capacitor 22 pf GRM188R71H104KA GRM188R71H103KA capacitor 56 pF Coilcraft
Contextual Info: DB-55015-165 BOM Component ID Description B1, B2 Ferrite Bead Value D1 Zener Diode 5.1 V L1 Inductor 35.5 nH L2 Inductor L3 Inductor L4 Case size Manufacturer Part Code PANASONIC EXCELDRC35C SOD110 PHILIPS BZX284C5V1 Mini COILCRAFT B09T 17.5 nH Mini COILCRAFT

Contextual Info: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

crystal s783

Abstract: GK266 GK266 V3
Contextual Info: Product specification Philips Semiconductors FLEX Pager Decoder PCD5008 8.7.7 8.7.8 8.7.9 8.8 8.8.1 8.8.2 8.8.3 8.8.4 8.8.5 8.8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state

IRF540

Abstract: IRF540 smd IRF540 application note Application Note of IRF540 irf540 "27 MHz" irf540 27 MHz IRF540 application IRF540S Applications Note of IRF540 transistor irf540
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A

PHX9NQ20T

Abstract: PHF9NQ20T phf9nq20t equivalent
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX9NQ20T , PHF9NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 5.2 A

PHW80NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW80NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 80 A

IRF640 smd

Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A

IRF540 smd

Abstract: IRF540 IRF540 application IRF540 application note Application Note of IRF540 Applications Note of IRF540 IRF540S 43118 TRANSISTOR SMD MARKING CODE 2g IRF540 cross reference
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A

phx9nq20t

Abstract: PHF9NQ20T PHX9NQ20
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX9NQ20T , PHF9NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 5.2 A

PHW50NQ15T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW50NQ15T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 50 A

cARRIER TSTAT-15

Abstract: xa-c37 06805 PXAC37KFA
Contextual Info: INTEGRATED CIRCUITS XA-C3 XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART, 1 SPI Port, CAN 2.0B, 32 CAN ID Filters, transport layer co-processor Preliminary specification Supersedes data of 1999 Dec 20 Philips Semiconductors