PHILIPS ID 35 Search Results

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

Contextual Info: N A PIER PHILIPS/DISCRETE b^E bbS3^31 Q05bS7T 41Q H A P X D Maintenance type - not tor new designs Philips Semiconductors_ Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

Contextual Info: Philips Semiconductors Product specification FLEX Pager Decoder PCD5008 CONTENTS 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)

Contextual Info: N AMER PHILIPS/DISCRETE b lE D ^ 5 3 1 3 1 D0307,:iD 3Tfi « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

PHW35NQ20T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW35NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 35 A

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

1000 v fast recovery rectifier diodes

Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Contextual Info: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

IRF540

Abstract: IRF540 smd IRF540 application note Application Note of IRF540 irf540 "27 MHz" irf540 27 MHz IRF540 application IRF540S Applications Note of IRF540 transistor irf540
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A

PHX9NQ20T

Abstract: PHF9NQ20T phf9nq20t equivalent
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX9NQ20T , PHF9NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 5.2 A

PHW80NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW80NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 80 A

IRF640 smd

Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A

PHW50NQ15T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW50NQ15T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 50 A

cARRIER TSTAT-15

Abstract: xa-c37 06805 PXAC37KFA
Contextual Info: INTEGRATED CIRCUITS XA-C3 XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART, 1 SPI Port, CAN 2.0B, 32 CAN ID Filters, transport layer co-processor Preliminary specification Supersedes data of 1999 Dec 20 Philips Semiconductors

150B

Abstract: PSMN030-150B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

PSMN130-200D

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN130-200D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 20 A

PSMN040-200W

Abstract: PSMN040200W
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A

PSMN057-200B

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

PSMN025-100D

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN025-100D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 47 A

PSMN060-200P

Abstract: PSMN057-200P
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are

T150

Contextual Info: PHILIPS DCG 6/6000 G r id -c o n tro lle d MERCURY VAPOUR RECTIFYING VALVS TUBS R2DR2S33UR A VAP3UR D3 M2RCURE & g r i l l e G itt e r g e s t e u e r t e GL3ICHRICHT3RRÖHR3 MIT QÜ3CE3IL33RDAMPFFULLUNG Filam ent : o x id e -c o ate d Filam ent : oxyde H eizfad en : Oxyd

PHX23NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX23NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching d VDSS = 100 V ID = 13 A g RDS ON ≤ 70 mΩ s GENERAL DESCRIPTION

PHK5NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOSTM transistor FEATURES PHK5NQ10T SYMBOL QUICK REFERENCE DATA • Low on-state resistance • Fast switching • Low profile surface mount package d VDS = 100 V ID = 5 A g RDS ON ≤ 50 mΩ (VGS = 10 V)

74LVT162244B

Abstract: SSOP48
Contextual Info: Philips Semiconductors Product specification 7A. w-riCOo/i/iD 3.3V 16-bit buffer/driver with 30£2 termination resistors 3-State 74LVT162244B FEATURES DESCRIPTION • 16-bit bus interface The 74LVT162244B is a high-performance BiCMOS product designed for V qc operation at 3.3V.