PHILIPS CAPACITOR 470 Search Results

hartley oscillator

Abstract: capacitors 22p NPO ceramic high power hartley oscillator 22p capacitor hartley AN456 compensation CAPACITOR N750 application of LC oscillator 1mh inductor N220
Contextual Info: Philips Semiconductors Application note Using LC oscillator circuits with Philips microcontrollers AN456 Author: William Houghton Table 1 contains measured frequencies for various combinations of inductor and capacitor values. The test circuit Figure 1 was a

marking CODE 68

Abstract: on semiconductor marking code 518 marking code E6 MARKING CODE 515 marking code 541 Diode RCB210
Contextual Info: DISCRETE CERAMICS DATA SHEET RCB210 Resistor-Capacitor network size 1608 Preliminary specification Supersedes data of 6th December 1999 File under Discrete Ceramics, ACM2 2000 Mar 21 Philips Components Preliminary specification Resistor-Capacitor network size 1608

hartley oscillator

Abstract: capacitors 22p NPO ceramic compensation CAPACITOR N750 lc oscillator hartley oscillator circuit AN456 N220 N330 P100 P87C750PBPN
Contextual Info: Philips Semiconductors Application note Using LC oscillator circuits with Philips microcontrollers AN456 Author: William Houghton There are two basic types of LC oscillators, Colpits and Hartley. The Colpits is the two capacitor type shown in Figure 1. It is generally

pm05 rectifier

Abstract: car radio philips RDS EON RDS decoder SAA6588T FULL WAVE RECTIFIER CIRCUITS diagram metal detector diagram PI RDS broadcast IC DIP20 SAA6579 SAA6588
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA6588 RDS/RBDS pre-processor Product specification File under Integrated Circuits, IC01 1997 Sep 01 Philips Semiconductors Product specification RDS/RBDS pre-processor SAA6588 FEATURES • Integrated switched capacitor filters

PHILIPS capacitors 2222 392

Abstract: Philips film capacitors 27 pf 2220 footprint 2824 footprint Philips film capacitors 21/1812 footprint
Contextual Info: Philips Components Product specification Metallized PPS film capacitors MKPS 390/391/392/393/394 MKPS CHIP CAPACITORS FEATURES • Self-encased chip capacitor for surface mounting • Stacked metallized non-flammable film cell • Solder-coated terminations

saa6588

Abstract: SMD transistor M05 DIP20 SAA6579 SAA6588T SO20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA6588 RDS/RBDS pre-processor Product specification Supersedes data of 1997 Sep 01 File under Integrated Circuits, IC01 2002 Jan 14 Philips Semiconductors Product specification RDS/RBDS pre-processor SAA6588 FEATURES • Integrated switched capacitor filters

TDA4661

Abstract: Datasheet TDA4661 block diagram of NTSC COLOUR SYSTEM analog delay line Philips TDA4661 TDA4650 TDA4661T A3753 119LN-A3753 sandcastle
Contextual Info: Philips Semiconductors Product specification Baseband delay line TDA4661 FEATURES GENERAL DESCRIPTION • Two comb filters, using the switched-capacitor technique, for one line delay time 64 µs The TDA4661 is an integrated baseband delay line circuit with one line delay. It is suitable for decoders with

PM7520

Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

2222-809-05002

Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
Contextual Info: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

BLU45/12

Contextual Info: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

linear amplifier 470-860

Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Contextual Info: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS

resistor MR25 philips

Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
Contextual Info: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

Si 122D

Abstract: 122d transistor BLU11/Si 122D
Contextual Info: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.

MR25 resistors

Contextual Info: N AMER PHILIPS/DISCRETE b*lE D • APX bb53T31 DQ2flfllb AbM BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

BLU60/28

Contextual Info: L.5E D PHILIPS INTERNATIONAL • 711002b OObSTST 125 l B LU 6 0 /2 8 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

122d transistor

Abstract: Si 122D 122d BLU11/Si 122D transistor 4312
Contextual Info: bSE. T> 711002b 00bS7D0 47T M P H I N BLU11/SL PHILIPS INT ERN ATI ON AL U.H.F. POW ER TR A N S IS TO R N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

t07 transistor

Contextual Info: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

Miniature Ceramic Plate Capacitors 2222 philips

Abstract: capacitor y 4n7 Ceramic capacitors 4n7 2222 2 capacitors philips N15 - 561 ceramic capacitor philips n56
Contextual Info: Philips Components Product specification Class 2, 500 V DC (flanged types) Miniature ceramic plate capacitors FEATURES • General purpose QUICK REFERENCE DATA DESCRIPTION VALUE • Coupling and decoupling Capacitance range (E12 series) 100 to 4700 pF • Space saving.

MCA45T

Abstract: capacitor philips ll
Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile