PHEMT S PARAMETERS Search Results

LX5561LL

Abstract: LX5561
Contextual Info: LX5561 TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET The LX5561 is a low noise amplifier LNA for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process.

AFP02N8-000

Contextual Info: General Purpose PHEMT Chip AFP02N8-000 Features 78 • Low Noise Figure, 1.25 dB @ 4 GHz 50 ■ High Associated Gain, 15.0 dB @ 4 GHz 50 D D G G ■ High MAG, > 18 dB @ 4 GHz ■ 0.7 µm Ti/Pd/Au Gates 350 ■ Passivated Surface 125 S 50 S Description The AFP02N8-000 general purpose PHEMT chip has

ATF35176

Abstract: ATF-35176 ATF-35076 ATF-3507 ATF35376TR1 ATF at 2.4 Ghz ATF35076 atf-3537 ATF-35376 ATF pHEMT
Contextual Info: HEWLETT-PACKARD/ C MP N T S LIE v '/ 'v HEW LETT K S S I PACKARD D • 4447504 Features • • • • • □ G O cm S 3T4 HHPA ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT 76 Package PHEMT Technology Low Noise Figure: 0.75 Typical at 12 GHz

OC-768

Abstract: TGA4801 TGA4803 DC TO 20GHZ RF AMPLIFIER MMIC
Contextual Info: Advance Product Information May 21, 2007 DC-35GHz MPA with AGC TGA4801 OC-768 43Gb/s NRZ Lithium Niobate Modulator Driver Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW

Contextual Info: LX5561 TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET The LNA is implemented with bias circuit and input/output matching circuit on chip, resulting in simple external circuit on board. In addition, the onchip bias circuit provides stable

Contextual Info: Product Data Sheet March 19, 2001 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: 6 9dg OC192
Contextual Info: Advance Product Datasheet July 30, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

OC768

Abstract: OC-768 TGA4803 wideband linear rf amplifier
Contextual Info: Advance Product Information October 3, 2006 DC to >50GHz MPA with AGC TGA4803 OC-768 43Gb/s NRZ Electro-Absorptive Modulator Driver Key Features and Performance • • • • 0.15um pHEMT Technology DC to >50GHz Linear BW 8dB Gain, 14dBm @ P1dB Group Delay Ripple +/- 6ps to 50 GHz

Contextual Info: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

LX5560LL-TR

Abstract: LX5560LL 5.9 GHz power amplifier LX5560L LL1005-FH1N5S LX5560 0.15 phemt
Contextual Info: LX5560 InGaAs – E-Mode pHEMT Low Noise Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LNA is implemented with bias circuit and input matching circuit on chip, resulting in simple external circuit. In addition, the on-chip bias circuit provides stable performance of

TGA1328

Abstract: 6 9dg TGA1328EPU
Contextual Info: Advance Product Datasheet January 18. 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

BB0502X7R104M16VNT9820

Abstract: DC TO 18GHZ RF AMPLIFIER MMIC Presidio CERAMIC CAP 10ghz optical modulator driver GaAs pHEMT MMIC medium power amplifier 0603YC103KAT DC-10 OC192 TGA1328-SCC TGA8652-EPU
Contextual Info: Product Data Sheet February 14, 2008 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW

10ghz optical modulator driver

Abstract: DC TO 18GHZ RF AMPLIFIER MMIC DC-10 OC192 TGA1328-SCC TGA8652-EPU
Contextual Info: Product Data Sheet January 24, 2005 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW

str 2656

Abstract: ATF-35176 atf35176 ATF-35076 atf35376 atf-35076-str 12GHZ low noise pseudomorphic ATF-35376-STR ATF-35176-STR
Contextual Info: ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT Ÿhnl H EW LET T IX J PACKARD F e a tu re s 76 Package • pHEMT Technology • Low Noise Figure: 0.75 Typical at 12 GHz • High Associated Gain: 11 dB Typical at 12 GHz • Cost Effective Ceramic Microstrip Package

AFP02N3-213

Abstract: 5201 gm
Contextual Info: ESAlpha t !- T r -•?/ « f ■ Low Noise Packaged PHEMT .''^':S59:pg^»>f»»?-*r^s -¿îj- AFP02N3-212, AFP02N3-213 Features 213 ■ Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 |am Ti/Pt/Au gates

Contextual Info: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed

Multi-gate pHEMT Modeling for Switch Applications

Contextual Info: Multi-gate pHEMT Modeling for Switch Applications Ce-Jun. Wei, Hong Yin, Olesky Klimashov, Yu Zhu, and Dylan Bartle Skyworks Solutions, Inc., 20 Sylvan Road, Woburn, USA Abstract - Multi-gate pHEMTs are extensively used in pHEMT switch circuits for wireless communication

Reproducing Power Hysteresis with Circuit Envelope Simulation

Contextual Info: 2013 IEEE International RF and Microwave Conference RFM2013 , December 09-11, 2013 - Penang, Malaysia Reproducing Power Hysteresis with Circuit Envelope Simulation Yu Zhu, Oleksey Klimashov, and Dylan Bartle Skyworks Solutions, Inc. 20 Sylvan Rd., Woburn, USA

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

Contextual Info: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way

SPF-5122Z

Abstract: SPF5122 spf 51z
Contextual Info: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

spf-5122

Abstract: SPF-5122Z spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1
Contextual Info: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

1ABDD

Abstract: ld 7522 ps DC-20 TGF2022-24
Contextual Info: Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-24 Key Features and Performance • • • • • • • • Product Description Frequency Range: DC - 20 GHz > 34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3

ATC600S100JW

Abstract: m 53206 ATC600S100J MCR10EZHF49R9 ECD-G0ER709 ECD-G0ER909 GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 PFQN-16
Contextual Info: RoHS Compliant 3.4—3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN