PH22 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bb53T31 QDBflOB? 3^B PH2222 PH2222A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 envelopes, primarily intended for switching and linear applications. QUICK REFERENCE DATA PH2222 PH2222A v CBO

PH2226-110M

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH2226-50M

Abstract: 8w RF POWER TRANSISTOR NPN
Contextual Info: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

lc 945 p transistor NPN

Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor
Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.

BP317

Abstract: PH2222A PH2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

7z transistor

Abstract: J401 PH2226-50M
Contextual Info: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 22.85 NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

Contextual Info: a n A M P com pany Radar Pulsed Power Transistor, 110W, 100|is Pulse, 10% Duty 2.25 - 2.55 GHz PH2226-110M Features • N PN S ilic o n P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la s s C O p e r a t io n

PH22

Contextual Info: ECE－ The Name You Can Trust! 1.905mm Contact Spacing, DVI Connectors EIO-PH22 SERIES • FEATURES z Meets DDWG standard. z Eliminates the needs for up to seven different connectors by combining many functions into one connector system. z Four pin quasi-coaxial circuit provides impedance control, decreases crosstalk and

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

1205e2

Contextual Info: Telefon: +49 0 6135 7026 -0 Telefax: +49 (0) 6135 931070 www.peak-electronics.de info@peak-electronics.de PH22WG-1205E2:1RLF 1.5KV ISOLATED 5W REGULATED SINGLE OUTPUT Available Inputs: 12 VDC Wide Input Available Outputs: 5 VDC Other specifications please enquire.

PH2226-110M

Abstract: VCC36
Contextual Info: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

ph2222a

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

transistor p8

Abstract: f2224 52Z05
Contextual Info: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l _ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

transistor ph22

Abstract: MWS11-PH22-CS h bridge CSP
Contextual Info: MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY There are two leadless chip carrier LCC package versions for this Power Amplifier family. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is a

PH2222A

Abstract: PH2907A SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA

ph2222

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222; PH2222A NPN switching transistors Product specification Supersedes data of 1997 May 20 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistors

Contextual Info: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n

2sc1675l

Abstract: 2SC105 BF235 LOW-POWER SILICON NPN TL3643 2N5028 250m TO-226-AA MPS2222M BFX97A
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

PH2222

Abstract: kia 2222a 1N916 PH2222A
Contextual Info: N AMER PHIL I P S / D I S C R E T E fa iE ]> • I 0LJ 0L 2 0 0 2 7 I 3^2 PH2222 PH2222A SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO -92 envelopes, p rim a rily intended fo r sw itch in g and linear applications. Q U IC K R E F E R E N C E D A T A

LAN8720A

Abstract: LAN8710A 5173278-2 12v regulator power
Contextual Info: EVB8720 Evaluation Board User Manual Copyright 2011 SMSC or its subsidiaries. All rights reserved. Circuit diagrams and other information relating to SMSC products are included as a means of illustrating typical applications. Consequently, complete information