002FL Search Results

Contextual Info: TOSHIBA ^0^7 240 002flE?75 37ñ TC51V4265DFTS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265D FTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

Contextual Info: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead

Contextual Info: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

transistor 2n3053

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

BU724A

Contextual Info: i i N AMER PHILIPS/DISCRETE APX bbS3^31 002fl307 24? blE » BU724A y v SILICON DIFFUSED POWER TRANSISTORS M onolithic high-voltage npn Darlington transistors w ith integrated speed-up diode in a SOT82 envelope, intended fo r fast switching applications such as small m otor control and switch-mode power supplies

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bb53^31 IAPX 002flDD3 M PS6520 MPS6521 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.

Contextual Info: m CiDC1724ñ 002fl47D bSfl m - TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description T h e T H M 3 6 1 0 B 0 A S /A S G is a 1 ,0 4 8 ,5 7 6 w o rd s b y 3 6 bits dyn a m ic R A M m o d u le w h ic h a sse m bled 2 p c s o f T C 5 1 1 8 1 8 0 A J

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE D 002flQMb EMM • APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications. P-N-P complement is PN2907/2907A.

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Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

Contextual Info: TOSHIBA TMP87CM71/N71/P71 UNDER DEVELOPMENT CMOS 8-BIT MICROCONTROLLER TMP87CM71F, TMP87CN71F, TMP87CP71F The 87CM71/N71/P71 are the high speed and high perform ance 8-bit single chip m icrocomputers. These MCU contain 6-bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.

Contextual Info: * J7313L.S DD2SS77 352 HI Or, Call C u sto m Service al 1-800-548-6132 USA Only BURR-BROWN 0 INA120 i m Precision INSTRUMENTATION AMPLIFIER o CM < z FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 25|iV max • LOW OFFSET VOLTAGE DRIFT: 0.25|xV/°C max • PIN-STRAPPED GAINS: 1, 10, 100, 1000

Contextual Info: TOSHIBA RDR724Ö 002ñfl40 544 TC551001BPL/BFL/BFTL/BTRL-70/85 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low

Contextual Info: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin

DK24

Contextual Info: 7 Ê . GEC P L E S S E Y o c t o b e r i 995 SEMI CO NDUC TOR S DS4268-2.2 DK24.FC FAST SWITCHING THYRISTOR KEY PARAMETERS 2000V DRM 260A ^T RMS 4000A ^TSM 200V/|iS dVdt 500A/J1S dl/dt 50)iS t. APPLICATIONS • High Power Inverters And Choppers. ■ UPS.

Contextual Info: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data

REF05

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR-BROWN <• REF05 +5V Precision VOLTAGE REFERENCE (Guaranteed Long-Term Stability) FEATURES • OUTPUT VOLTAGE: +5V ±0.1% max • GUARANTEED LONG-TERM STABILITY: 25ppm/1000 hrs max • EXCELLENT TEMPERATURE STABILITY:

74LS04C

Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .