PH10 Search Results

PH1090-550S

Contextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications

Contextual Info: Weller Soldering Tool Stand with Base, Sponge and Receptacle for W100PG Iron Product Details Catalog No. PH100 UPC Code 037103474209 Fits Tool s W100PG Description Iron Holder Packaging Industrial Box/Carton Tech. Spec. Solder_Safety_Warnings.pdf Low Res.

a 103 m Transistor

Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
Contextual Info: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration

NPN 350W

Contextual Info: PH1090-350L Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH1090-175L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)375# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)13mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-80L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)5.2 Absolute Max. Power Diss. (W)180# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)6.3mx @V(CBO) (V) (Test Condition)45

Contextual Info: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Rogers 6010.5

Abstract: epco 6010.5 T-33-J-S
Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry

Contextual Info: OM-CP-PH101 pH and Temperature Datalogger Part of the NOMAD Family OM-CP-PH101 399 $ Basic Unit Lifetime MADE IN USA ߜWorks with OMEGA® PHE-4200 Series of pH Probes ߜ16-Bit Resolution ߜ Programmable Calibration/Start Time ߜ Miniature Size ߜ Memory Wrap Around

Contextual Info: 6 5 To Configure Temperature If You Selected MANU for Temperature Compensation : 1. SETPTS 3. /pH T/mV MENU /pH T/mV MENU /pH SETPTS RESET T/mV MENU RESET Rinse the electrode with distilled water and place it into a pH4 or pH10 solution. 7. Press ᮣT/mV. The controller displays the

Contextual Info: DATA ACQUISITION, RECORDERS & SIGNAL CONDITIONERS OM-CP-PH101 pH and Temperature Datalogger Part of the NOMAD Family OM-CP-PH101 $ 399 Basic Unit Lifetime MADE IN USA ߜ Works with OMEGA® PHE-4200 Series of pH Probes ߜ 16-Bit Resolution ߜ Programmable Calibration/

PH1090-700B

Abstract: Mode-S transistor
Contextual Info: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

npn photo transistor

Abstract: SENSOR A-AMBIENT pH101 CE01 GALLIUM ARSENIDE ir detector
Contextual Info: 'NEC ELECTRONICS INC g* f w 7 30E D • L42752S 002^577 Q ■ PHOTO T R A N S IS T O R PH101 NPN E P IT A X IA L D A R LIN G T O N PHOTO P H O T O T R A N S IS T O R DETECTOR D E SC R IP T IO N The PH101 is a miniature NPN sillicon phototransistor hawing exceptionally stable characteristics and high illuminance sensiti­

Nemic-Lambda

Abstract: C101 Transistor transistor C101 PH100F24 PH100F
Contextual Info: NEMIC-LAMBDA PH100F24 SPECIFICATION C101-01-01A MODEL PH100F PH100F ITEMS 24-2 24-3 PH100F PH100F PH100F PH100F PH100F 24-5 24-12 24-15 24-24 24-48 1 Nominal Output Voltage V 2 3 5 12 15 24 28 2 Maximum Output Current A 20 20 20 8.4 6.7 4.2 3.6 3 Nominal Output Power

4604

Abstract: ic 4604 567 ic PH1080
Contextual Info: PRELIMINARY April 1997 PH1080 PH1080 Integrated Delta Sigma Bandpass Analog to Digital Converter The PH1080 is a a complete baseband receiver. It integrates the IF sampling A/D, digital downconversion and low pass filtering on a single chip. The part operates using +5 V for the analog and

Densei-Lambda PH100f

Abstract: transistor C101 C101 PH100F24 100MOHM PH100
Contextual Info: DENSEI-LAMBDA PH100F24 SPECIFICATION 26 27 28 29 30 =NOTES= *1. At 24VDC and Maximum Output Current. *2. 18 ~ 36VDC, Constant Load. *3. No load ~ Full load, Constant input voltage. *4. Constant current limiting with automatic recovery. *5. Inverter shutdown method, Manual Reset.

NEC em1

Contextual Info: DATA SH EET NEC aECTRON DEVICE PHOTO TRANSISTOR PH108A PHOTO TRAN SISTO R -NEPOC SERIES— DESCRIPTION The PH108A i s a photo t r a n s i s t o r in a p l a s t i c mold -package, and very s u ita b le for a d e te c to r o f a photo I n te r r u p te r with com b ination o f th e SE308.

Contextual Info: PH1090-350L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)750 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25mx @V(CBO) (V) (Test Condition)45

Contextual Info: PH1090-6S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70â V(BR)CBO (V) I(C) Max. (A)430m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40

Contextual Info: PH1090-800S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)37 Absolute Max. Power Diss. (W)2.5k# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m @V(CBO) (V) (Test Condition)45

0 9 0 M

Contextual Info: a n A M P com pany Avionics Pulsed Power Transistor, 175W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-175L Features • N PN S ilic o n M ic ro w a v e P o w e r T ran sisto r uu 10 ^ • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la ss C O p e r a tio n

Contextual Info: PH1090-175L Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: DENSEI-LAMBDA PH100S280 SPECIFICATIONS C097 - 01 - 01D 25 Isolation Resistance 26 Vibration 27 Shock 28 Weight Typ. 29 Size (WxHxD) PH100S 280-3.3 3.3 20 66 74 PH100S 280-5 5 20 100 81 PH100S PH100S PH100S 280-12 280-15 280-24 12 15 24 8.4 6.7 4.2 100.8

Contextual Info: English AN-PH10EX AN-PH1EX Deutsch Français （日本専用） Español Fixed wide lens for projector Festes Weitwinkelobjektiv für Projektor Objectif grand angle fixe pour projecteur Objetivo angular fijo para proyector プロジェクター用短焦点固定レンズ