PH-8 DIODE Search Results

Contextual Info: DBI 25 KN<YS KNNY KKNY< $P W >F 8 E^- W ]> ABG B, C N,/1 K >@@ M@@ ¥@@ J>@@ K JM@ >¥@ F?@ ¥@@ ^95*% PH$ >F2@> PH$ >F2@M PH$ >F2@¥ PH$ >F2J> TU _ @SJF @S] @SZ J J?@@ J@@@ PH$ >F2J? Symbol Conditions Values Units $P ^( W M? ABS VJ[J>@S 1( 63(' -&&'/1; ^( W M? ABS -0(%%/%>G

uv phototransistor

Contextual Info: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER

Contextual Info: 6 7 9 8 5 8 0 O PTEK TECHNOLOGY 86 D 00038 INC OPtEK TECHN O LO GY INC aT 7 %. D £/ DE I tVlfl'SflD 0000030 S T - V /-/9 .0 2 7 X .0 2 7 PH O TO TRA N SISTO R A N O PH O TO D A RLIN G TO N CHIPS SLtCTfllCAL CHARACfCftltTICt IM 'CI CHIP TYPE part NUMBER le io

ma 2830

Abstract: LED phototransistor IC PACKAGE MXP1158 MSC1334
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP 1158 Phototransistor Optocoupler Features • • • • NC 2 2,500 Volt electrical isolation Standard 8-pin DIP package High current transfer ratio for low IF Screening similar to JANTX, JANTXV or

sylvania, transformer

Abstract: SYLVANIA
Contextual Info: 7E6 Sylvania Type DUODIODE MEDIUM-MU TRIODE GT EQUIVALENT 8SR7GT o mi i if Tin 8W -L-7 PH Y SIC A L S P E C IF IC A T IO N S B a s e .f . L o c k -In 8 P in

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A

Contextual Info: Micnosemi H m m Santa Ana, CA m Progress Pow ered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft

Contextual Info: GaAs MMIC Bi-Phase Modulator HITTITE MICROWAVE CORPORATION HMC136 111% FEBRUARY 1995 Features : CHIP INTEGRATES DIRECTLY INTO MIC DESIGNS S o* mmmmm 30 dB O F CARRIER SUPPRESSION » DIRECT MODULATION IN THE 4 - 8 GHz BAND « wf * Typical Performance FUNCTIONS ALSO A S A PH A SE D ETECTOR

60RIA

Abstract: VM7230
Contextual Info: ÏƧ VM 7230/VM 7230N VValue T C ln c - m the CustomerT 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • High Performance - Read Gain = 250 V/V Typical - Input Noise = 0.75nV/VHz max - Head Inductance Range = 0.2 -1 0 pH

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

Nippon capacitors

Abstract: MC34118
Contextual Info: O rder th is data sheet by MC34118/D M M O T O R O L A SEMICONDUCTORS MC3 4 1 1 8 P.O. BOX 20912 • PH O EN IX, A R IZ O N A 85036 The MC34118 Voice Switched Speakerphone Circuit incorpo­ rates the necessary amplifiers, attenuators, level detectors, and

MS0038

Abstract: M33033 CNY17GF CNY17G-3 phototransistor philips CNY17G-1 philips 23 BS415 BS7002 CNY17G
Contextual Info: PH ILIPS MIE D INTERNATIONAL • 711Qû2b QG3asaM S M P H I N r - y P h ilip s S e m ic o n d u c to rs / - 8 3 _ _P ro d u c t s p e c ific a tio n High-voltage optocouplers CNY17G/CNY17GF FEATURES • High current transfer ratio and a

IRFY340

Abstract: irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120
Contextual Info: IOR I RFY Series Devices IRFY Series Data Sheet The IRFY Data Sheet de scrib es 12 devices, 8 N -C hannel and 4 P -C hannel, all con tain ed in the T O -257A B package. T his data sheet is arra ng ed to show com m on ta b u la r and gra ph ical inform ation

CNW85

Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884
Contextual Info: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and

PHP120

Abstract: PHP24 PHP250 PHP440 PHP500 PIP500 Scans-006293 MIL-STD-1399
Contextual Info: I / Microisemi Corp. SANTA ANA. CA / ' The diode experts SCOTTSDALE, A 2 F a r m o re in fo rm a tio n call: ( 602 941-6300 PH P8.4 thru P H P 50 0 and P IP 8.4 thru P IP 5 0 0 FEA TU RES • 7.500 AND 15.000 W ATTS PEAK PU LSE POWER DISSIPATION • AVAILABLE IN RANGES FROM B.4 TO 500 VOLTS

ph-30 diode

Abstract: Sharp Semiconductor Lasers photodiode dvd cd laser diode for rw drive Laser Diode for cd rw Laser Diode Frame Type GH6C005B3 RED laser diode operating Temperature GH06510B2A GH17805B2AS GH6D407B5A
Contextual Info: E094_098.fm 94 ページ ２００１年９月２３日 日曜日 午後１時３２分 LASER LASER DIODE ✩New product ★Under development • LASER DIODES Wavelength nm Model No. (Tc = 25°C) Optical power output (mW) MAX. CW Pulse GH06507B2A GH06507B2B

Chiller

Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Contextual Info: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

03ln8

Contextual Info: Light Emitting Diodes LN316GPH Square Type □3.0 mm x 7.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA

bat41 BAT46

Abstract: C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 LL P 7 5 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal Schottky diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .

ph 1n4148

Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
Contextual Info: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .