PH-8 DIODE Search Results

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uv phototransistor

Contextual Info: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER

Contextual Info: 6 7 9 8 5 8 0 O PTEK TECHNOLOGY 86 D 00038 INC OPtEK TECHN O LO GY INC aT 7 %. D £/ DE I tVlfl'SflD 0000030 S T - V /-/9 .0 2 7 X .0 2 7 PH O TO TRA N SISTO R A N O PH O TO D A RLIN G TO N CHIPS SLtCTfllCAL CHARACfCftltTICt IM 'CI CHIP TYPE part NUMBER le io

OP266W

Abstract: OP506W
Contextual Info: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)

BA682

Abstract: BA683
Contextual Info: blE D • bfc>S3R31 DQEblVb Dfifi N AMER PH ILI PS/DISCRETE IAPX BA682 BA683 BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-8 O envelope, intended fo r band switching in v.h.f. television tuners. A special feature o f these diodes ¡s their low capacitance.

BAS86

Contextual Info: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is

ma 2830

Abstract: LED phototransistor IC PACKAGE MXP1158 MSC1334
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP 1158 Phototransistor Optocoupler Features • • • • NC 2 2,500 Volt electrical isolation Standard 8-pin DIP package High current transfer ratio for low IF Screening similar to JANTX, JANTXV or

Contextual Info: NEC PH O TO COUPLER ELECTRON DEVICI PS2010 PHOTO COUPLER - N EPO C S E R IE S - DESCRIPTIO N The PS2010 is an optically coupled isorator containing a GaAi light emitting diode and an NPN silicon photo transistor. PS2010 all rank : MCT2, H11A2 ~M 11A5, 4 N 2 S~ 4 N 2 8

ID100

Abstract: MSAEX8P50A MSAFX24N50A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A

sylvania, transformer

Abstract: SYLVANIA
Contextual Info: 7E6 Sylvania Type DUODIODE MEDIUM-MU TRIODE GT EQUIVALENT 8SR7GT o mi i if Tin 8W -L-7 PH Y SIC A L S P E C IF IC A T IO N S B a s e .f . L o c k -In 8 P in

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A

KT860

Abstract: KT870 KT872 5 PIN JS5 IC lfr-20 Y405
Contextual Info: 6 7 9 8 5 8 0 OPTEK TECHNOLOGY OPTEK TECHNOLOGY 860 INC INC lib 0 0061 D DE IbTTÖSfiD ' 000DDL.1 OPTEK SLO TTED O P T IC A L SW ITCH ES PH O TO TRA N SISTO R OUTPUT Optek Technology, Inc. 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461 KT 860/870/880/890 SERIES

Contextual Info: Microsemi r n m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft

Contextual Info: Micnosemi H m m Santa Ana, CA m Progress Pow ered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft

InGaAs Photodiode 1550nm

Contextual Info: MITSUBISHI L A S E R DIODES PD8XX3 SERIES InG aAs A V A L A N C H E PH O TO DIODES TYPE NAME FEATURES DESCRIPTION PD 8 X X 3 series are InGaAs avalanche photodiode which has •0 > 3 5 ^ m active diameter a • L o w noise s e n s itiv e receiving the a re a

74ABT16374

Abstract: 74ABT16374DL
Contextual Info: N APC /PH ILIPS SEMICOND bSE D • bbS3TE4 DDflbbMB 4b0 Philips S em iconductors A dvanced BiCMOS P roducts M S IC B Prelim inary specification saæ soBœ Dual octal D-type flip-flop; positive-edge trigger 3-State 74ABT16374 FEATURES DESCRIPTION • Two 8-bit positive edge triggered registers

60RIA

Abstract: VM7230
Contextual Info: ÏƧ VM 7230/VM 7230N VValue T C ln c - m the CustomerT 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • High Performance - Read Gain = 250 V/V Typical - Input Noise = 0.75nV/VHz max - Head Inductance Range = 0.2 -1 0 pH

Contextual Info: a m i V T C In c. Value the Customer VM7120 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEA TU RES • High Performance - Read Gain = 300 V /V Typical - Input Noise = 0.7nV/VHz max - Head Inductance Range = 0 . 2 - 5 pH

LF 358

Contextual Info: PLASTIC T-1 PAIR OPTOELECTRONICS QPC1213 il .018 0.46 SQ . 1Q. ±003 ( ± 0 . 0 8 ) * tò r i? » ) ^ TYP 2 PLCS. “R . _ 7 / l4 5 (3 68) 018(0.4_6)S_Q ^ " ^ \ 165'(4 . 19) ±.003 (±0.08) TYP 2 PLCS! 145(3 68) INFRARED LED PH O TO TRANSISTOR ST2138 ST2138

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

Nippon capacitors

Abstract: MC34118
Contextual Info: O rder th is data sheet by MC34118/D M M O T O R O L A SEMICONDUCTORS MC3 4 1 1 8 P.O. BOX 20912 • PH O EN IX, A R IZ O N A 85036 The MC34118 Voice Switched Speakerphone Circuit incorpo­ rates the necessary amplifiers, attenuators, level detectors, and

Contextual Info: J 4P VTC Inc. Value the Customer VM7120 2, 4 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY TW O -TERM IN AL READ/WRITE P R EA M PS FEATU R ES • High Performance - Read Gain = 300 V/V Typical - Input Noise = 0.7nV/VHz max - Head Inductance Range = 0 . 2 - 5 pH

701T1

Abstract: 301t1
Contextual Info: 04/21/98 13:20 From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 To Lynn Murphy 8 f l ^ i T C ^ R O L A 02107 rutlni |.ill i l . r i n m i l SEMICONDUCTOR TECHNICAL DATA M M SD 101T1 M M SD 301T1 M M SD 701T1 SO D-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our

MS0038

Abstract: M33033 CNY17GF CNY17G-3 phototransistor philips CNY17G-1 philips 23 BS415 BS7002 CNY17G
Contextual Info: PH ILIPS MIE D INTERNATIONAL • 711Qû2b QG3asaM S M P H I N r - y P h ilip s S e m ic o n d u c to rs / - 8 3 _ _P ro d u c t s p e c ific a tio n High-voltage optocouplers CNY17G/CNY17GF FEATURES • High current transfer ratio and a