PG136 Search Results

LA 1361

Abstract: PG1360 PG1361 PG1362 PG1363 PG1364 PG1365 PG1366 eB 1361
Contextual Info: 0043592 A P I E L E C T R O N IC S "~Ï3 IN C 13 A 0 1 14 ~~-33 ~// D ÎT üD M Hs^ a G o o o i m ? r • / PG1360thru PG 1366 10 A M P N P N P L A N A R * o T O -6 1 ' ¿S* : o 6 0 M H z typical o 4 0 W A T T @ 1 00°C ' o P R E M IU M G R A D E M A X I M U M R A T IN G S @ 2 5 ° C ,

LA 1361

Abstract: PG1362 PG1360 PG1361 PG1363 PG1364 PG1365
Contextual Info: 0043592 A P I *Ly 130 I ELECTRONICS ~Ï3 INC 1 3A0114 ~J~~-S3 -// DE IG D M B ST S DD00114 7 1 ~ PG1360 • thru V . . PG1366 10 AMP N PN PLANAR • * o TO-61 ' cï> - o 40 WATT @ 100°C s ' : o 60 MHz typical ' ' o PREMIUM GRADE M AXIM UM RATINGS @ 25°C ,

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
Contextual Info: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage

Contextual Info: PG1363 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)5.0

Contextual Info: PG1366 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)5.0

PG2362

Abstract: LEA-5 PG1360 PG1361 PG1362 PG1363 PG1364 PG1365 PG2360 PG2361
Contextual Info: • Linear hfE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVcEoimi to 100 volts hF E hFE NPN Type Package P G 1 36 0 T O -6 1 80 PG1361 PG 1362 ; PG 1363 i P G 1364

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI373 PGI374 PGI375
Contextual Info: 0043 5 9 2 A P I ELECTRONICS H DE | 0 0 4 3 S T E 4M T ~33~// 13 A P I 17 TilC 0000117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •

CP32P

Contextual Info: LORAL NICROtilAVE-FSI SIE D • 5530130 QQDD4L.D 155 HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The G C3200 series o f harm onic ge nera to r varactors uses a single epitaxial silicon die. Strict material and process controls result in h igh reproducibility. A unique silicon dioxide passiva­

GC3300

Abstract: GC3307 gc3306 GC3305
Contextual Info: LORAL Î1ICROUAVE-FS I SIE D • T-07-11 5 5 0 0 13 0 O O O G M b E T2fl HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The GC3300 Series of Multiplier Varactors offer high break­ down voltage, lower transition time and lower capacitances than available with GC3200 Series. This is accomplished by

nanosecond pulse generator

Abstract: GC2521 g8tb JVC 0J "step recovery diode" 1.7 pf GC2510 7S11 42nH step recovery diodes
Contextual Info: LO RA L fllCROUAVE-FSI SU D • 5 5 0 0 1 3 0 0 0 0 0 4 5 0 5T7 STEP RECOVERY DIODES DESCRIPTION APPLICATIONS The GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.

pg2360

Abstract: A 61
Contextual Info: • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVceoi. u. i to 100 volts fMsL .-te.1 .ter, -v hF E hFE (s u s ) o BV ceo Min Max 8 8 8 8 20 40 20 40 20

Contextual Info: 0043592 A P I ELE CTRONICS TilC H 4M T~33~// 13 A P I 17 DE | 0 0 4 3 S T E 0000 117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •