PG1103 Search Results

Contextual Info: PG1103 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

1117 FG

Abstract: AJ 1117 PG1101 AZ 1117 A IC IL 1117 2N4864 PG1102 PG1103 PG1104 PG1105
Contextual Info: *" ' M .«JfV'­* i-X í-vJ 0043592 A P I'E LECTRONICS ‘ A P I ELECTRONICS IN C INC 1 3 A 0 O 83 T r^ à-Q.7 13 DE 1 0 0 4 3 5 = 1 5 0 0 0 0 0 Ö 3 0 I .w>~v INTERIM BULLETIN S u b je c t to R e visio n W ith o u t N o tic e POW ER TRANSISTOR ENGINEERING BULLETIN

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

DARLINGTON 3A 100V npn

Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn
Contextual Info: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46

Contextual Info: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN

1117 FG

Abstract: 2N4864 PG1101 PG1102 PG1103 PG1104 PG1105 PG1106 PG1108 PG1109
Contextual Info: '•M.- : 043592 A P I ; E LECTRONIC S_ INC -_13A0083_,_ T ^ ' Q ? 13 DE I OOMíSTS DODDOflH O LA P I ELECTRONICS INC ■Ar o IN T E R IM B U LLE TIN S u b je c t to R e visio n W ithout N otice -JUNE 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN *: v;*