PF 1140 W Search Results

Contextual Info: Power MOSFET HVX- Il series E-pack SMD N-Channel, Enhancement type TO-220 FTO-220 Electrical Characteristics Absolute Maximum Ratings Pi (max) Ct. (typ) [A] [W ] [9 3 [pF] [pF] 1 10 50 14.0 4.7 230 3 630 5 16 3 3 50 30 4.7 4.7 630 16 40 40 630 16 40 R dsìo n )

Contextual Info: Pow er MOSFET V/ h . ‘j E-pack SMD HVX-H series // TO-220 STO-220 (SMD) MTO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch V dss V gss Id Pt rc ] [V ] [V] [A ] [W ] 2SK2663 2664 2665 •s * h 2666 2667 - G * C rss ton toff

Contextual Info: tSENSITRON SEMICONDUCTOR 30WQ10FN TECHNICAL DATA DATA SHEET 1140, REV. - PLASTIC SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Reverse battery protection • Battery Charging Features: • • • •

Contextual Info: AN11228 BGA301x Wideband Variable Gain Amplifier Application Rev. 1 — 22 October 2012 Application note Document information Info Content Keywords BGA3015, BGA3018, CATV, Line-up, VGA, Evaluation board Abstract This application note describes the schematic and layout requirements

Contextual Info: STAC0912-250 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 16 dB gain over 960 1215 MHz • ST Air Cavity / STAC package Description STAC265B

ST T8 1060

Abstract: L0165 ATC100B390KP500X l0393 L0090 L0112 960-1215mhz
Contextual Info: STAC0912-250 LDMOS avionics radar transistor Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 16 dB gain over 960 1215 MHz ■ ST Air Cavity / STAC package Description The STAC0912-250 is a common source

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

HB56D836

Contextual Info: HB56D836 Series 8,388,608-word x 36-bit High Density Dynamic RAM Module Description The HB56D836 is a 8 M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ

Photodiodes

Abstract: yag Electrical circuit S11499 TO-8 Package
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

2SK2225

Abstract: 2SK2248-01L 2SK1388 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1881L 2SK2048L
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR

Contextual Info: AN11228 BGA301x Wideband Variable Gain Amplifier Application Rev. 2 — 3 February 2014 Application note Document information Info Content Keywords BGA3015, BGA3018, BAP70Q, CATV, Line-up, VGA, Evaluation board Abstract This application note describes the schematic and layout requirements

chn 508

Abstract: cherry master 99 pinout CHN 846 CHN 524 cherry master pinout CHN 650 M-986 chn 348 r2f transistor M-986-1R1
Contextual Info: M-986-2R2 MFC Transceivers Features • Direct A-Law PCM digital input • 2.048 Mb/s clocking • Programmable forward/backward mode • Programmable compelled/direct control • Operates with standard codecs for analog interfacing • Microprocessor read/write interface

Contextual Info: M-986-2R2 MFC Transceivers Features • Direct A-Law PCM digital input • 2.048 Mb/s clocking • Programmable forward/backward mode • Programmable compelled/direct control • Operates with standard codecs for analog interfacing • Microprocessor read/write interface

2SK1083MR

Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

Contextual Info: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: White Electronic Designs WED3EG72129S-D3 *ADVANCED 1GB- 128Mx72 DDR SDRAM REGISTERED FEATURES n Double-data-rate architecture n Bi-directional data strobes DQS n Differential clock inputs (CK & CK#) n Programmable Read Latency 2,2,5 (clock) n Programmable Burst Length (2,4,8)

ST7921

Abstract: S49-S96 LCD 1620 A LCD 1620 marking s49 LCD 1620 datasheet transistor C 2240 400KHZ GSM792E ST7920
Contextual Info: ST Sitronix PRELIMINARY ST7921 96CH Segment Driver For Dot Matrix LCD Features : !"Display driving bias : static to 1/5 !"Power supply for logic : 2.7V ~ 5.5V !"Power supply for LCD voltage V0~VSS : 3V ~ 8V !"Dot matrix LCD driver with two 48 channel outputs

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically

transistor C 2240

Abstract: LCD 1620 LCD 1620 datasheet ST7921 c 2240 st c 1740 y 400KHZ ST7920 marking s49
Contextual Info: ST Sitronix ST7921 96CH Segment Driver For Dot Matrix LCD „ Features : z z z z z z Display driving bias : static to 1/5 Power supply for logic : 2.7V ~ 5.5V Power supply for LCD voltage V0~VSS : 3V ~ 7V Dot matrix LCD driver with two 48 channel outputs

Contextual Info: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)

transistor C 2240

Abstract: ST7921 LCD 1620 datasheet LCD 1620 S49 marking c 2240 display 1620 LCD 2LINE 400KHZ 850C
Contextual Info: ST Sitronix ST7921 96CH Segment Driver For Dot Matrix LCD Features : Display driving bias : static to 1/5 Power supply for logic : 2.7V ~ 5.5V Power supply for LCD voltage V0~VSS : 3V ~ 7V Dot matrix LCD driver with two 48 channel outputs Bias voltage (V0 ~ V4)

Contextual Info: HMC591LP5 / 591LP5E v02.0107 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power ampliier for: Saturated Output Power: +33 dBm @ 20% PAE