PEC 632 Search Results

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers C165 Preliminary C165 16-Bit Microcontroller • • • • • • • • • • • • • • • High Perform ance 16-bit CPU with 4-Stage Pipeline 100 ns Instruction Cycle Time at 20-M Hz CPU Clock

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL Version 1.2 F2MC-16LX 16-BIT MICROCONTROLLER MB90370 Series HARDWARE MANUAL PREFACE • Objectives and intended reader Thank you for purchasing Fujitsu semiconductor products. The MB90370 series was developed as a group of general-purpose models in the F²MC-16LX

PEB 4266 T V1.2

Abstract: convert 230V AC to 5V DC without transformer PEF 3304 BSP135 transformer from 230V AC to 5V DC 230v ac to -48v dc converter 230V AC to 5V DC ic CNY 42 optocoupler relay for controlling 230v ac using 5v dual falc
Contextual Info: ICs for Communications Intelligent Network Termination Solution Guide for Intelligent Network Termination HL Solution Guide 04.99 DS 1 Revision History: Current Version: 04.99 Previous Version: - Page Page in previous (in current Version Version) Subjects (major changes since last revision)

ATUC128D3

Abstract: equivalent scr ss 3228 ATUC128 ic cd 2399 gp avr32-uc3 PEC 346 CRC-16-CCIT SAB 2064 re-enumeration
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instructions – Read-Modify-Write Instructions and Atomic Bit Manipulation

AMP PBT-GF15

Abstract: AMP PBT-GF20 PBT-GF20 2.2 PBT-GF-20
Contextual Info: T H I S DRAWING IS U N P U B L I \¿E R Z R A ^ -Te H p -fítW m FF F F N TI C COPYRIGHT ICHTF RELEASED F R E I FÜR 7 F I CHNUNG BY 1998 AMP INCORPORATED. FOR P U B L I C A T I O N V EROEFFENTLICHUN G MATED WITH: PASSEND Z U : 19 - . LO C A L L RIG H TS R ESERVED.

AUDIO DNA ATMEL QFP144

Abstract: AT32UC3A3 AT32UC3A3256 AT32UC3A3256S AT32UC3A364 AVR32 ISO7816 pulse code interval encoding using c language IR remote control switch circuit diagram AT32UC3
Contextual Info: Features • High Performance, Low Power AVR 32 UC 32-Bit Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation

igbt 500V 22A

Abstract: D-12 IRGB440U irgb440
Contextual Info: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

IRG4BAC50S

Abstract: TO-273AA weight TO-273AA pec 632
Contextual Info: PD - 93771 PROVISIONAL IRG4BAC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

D-12

Abstract: IRGBC30S pec 820
Contextual Info: PD - 9.688A IRGBC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve VCES = 600V VCE(sat) ≤ 2.2V

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGPC50F

Contextual Info: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V

IRGBC40S

Abstract: C-15 C-16 D-12
Contextual Info: PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V

transistor IR 652 H GC

Abstract: D-12 IRGBC20U C655 LAmp igbt 600V
Contextual Info: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

C-15

Abstract: C-16 D-12 IRGBC40S
Contextual Info: PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V

22a ic

Abstract: D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632
Contextual Info: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

IRGPF50F

Abstract: al c269
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c331

Abstract: c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses
Contextual Info: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

energy tapping identifier wireless data acquisition

Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
Contextual Info: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling

GCM 38112

Abstract: Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation

IRG4BC30K

Abstract: IRGBC30K IRGBC30M
Contextual Info: PD - 91596A IRG4BC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4BC30W

Contextual Info: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC30K

Abstract: IRGBC30K IRGBC30M
Contextual Info: PD - 91596A IRG4BC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

TRANSISTOR PEC 545

Abstract: IRG4PC50S 3p transistor
Contextual Info: PD - 91581A IRG4PC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

91450

Abstract: IRG4BC30F
Contextual Info: PD - 91450B IRG4BC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than