PDTC* MARKING CODE Search Results

**PDTC* MARKING CODE Result Highlights (5)**

Part	ECAD Model	Manufacturer	Description	Download	Buy
5446/BEA		Rochester Electronics LLC	5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA)	PDF
54LS190/BEA		Rochester Electronics LLC	54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA)	PDF
2910/BQA		Rochester Electronics LLC	2910 - Microprogram Controller - Dual marked (7801701QA)	PDF
MQ80C186-12/BYA		Rochester Electronics LLC	80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA)	PDF
54L04/BDA		Rochester Electronics LLC	54L04 - Hex Inverter - Dual marked (M38510/02005BDA)	PDF

**PDTC* MARKING CODE Datasheets Context Search**

Catalog Datasheet	Type	Document Tags	PDF
MARKING Y1 TRANSISTOR Abstract: Y2 marking HJ2584 Y2MARKING PDTC* MARKING CODE Contextual Info: HI-SINCERITY Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.	Original	hj200204 hj2584 o-252 183oc +6217oc 260oc marking y1 transistor y2 marking y2marking pdtc* marking code	PDF
HJ10387 Abstract: A1 marking code amplifier Y2 MARKING HE6028 Contextual Info: HI-SINCERITY Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications.	Original	he6028 hj10387 o-252 200oc +6183oc 217oc 260oc 245oc a1 marking code amplifier y2 marking	PDF
Contextual Info: PD - 94919 IRG4BC10SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in	Original	irg4bc10spbf o-220ab 10ntrolling	PDF
t416 Abstract: 817 CN Contextual Info: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE	OCR Scan	pdtc114ye 5002/00/03/pp8 t416 817 cn	PDF
114ET Abstract: PDTA114E PDTC114E Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES • Built-in bias resistors R1 and R2	OCR Scan	pdtc114et mam097 pdta114et 115002/00/07/pp8 +3114et pdta114e pdtc114e	PDF
AN 6752 Contextual Info: DISCRETE SEMICONDUCTORS Objective specification Supersedes data of 1998 May 18 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA114TT FEATURES • Built-in bias resistor R1 typ. 10k£2	OCR Scan	pdta114tt mam286 114tt 115002/00/03/pp8 +1an 6752	PDF
2sk 4207 Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent Contextual Info: CONTENTS Index . 5 General Information . 9	Original	d-85622 2sk 4207 2sk176 2sk975 equivalent +72sj177 2sj318 pm45502c 2sk2225 2sk1058 2sj162 pwm 100w audio amplifier 2sk1336 equivalent	PDF
hitachi j50 Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent Contextual Info: CONTENTS Index . 5 General Information . 9	Original	d-85622 hitachi j50 2sk1168 ha16116 "cross reference +7transistor marking yb 826 ade-408 gg 84 marking code n-channel mos field effect transistor 2sk1058 2sj162 2sj177 2sj182 equivalent	PDF