PDTC* MARKING CODE Search Results

**PDTC* MARKING CODE Result Highlights (5)**

Part	ECAD Model	Manufacturer	Description	Download	Buy
TC4511BP		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16	Datasheet
68305-001LF		Amphenol Communications Solutions	Din Accessory Coding	PDF
65197-001LF		Amphenol Communications Solutions	Din Accessory Coding Part	PDF
70275-001LF		Amphenol Communications Solutions	70275-001LF-METRAL FEM CODING PART	PDF
91290-101LF		Amphenol Communications Solutions	Board-to-Board Coding System, Receptacle Key, LF	PDF

**PDTC* MARKING CODE Datasheets Context Search**

Catalog Datasheet	Type	Document Tags	PDF
MARKING Y1 TRANSISTOR Abstract: Y2 marking HJ2584 Y2MARKING PDTC* MARKING CODE Contextual Info: HI-SINCERITY Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.	Original	HJ200204 HJ2584 HJ2584 O-252 183oC 217oC 260oC MARKING Y1 TRANSISTOR Y2 marking Y2MARKING PDTC* MARKING CODE	PDF
HJ10387 Abstract: A1 marking code amplifier Y2 MARKING HE6028 Contextual Info: HI-SINCERITY Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications.	Original	HE6028 HJ10387 HJ10387 O-252 200oC 183oC 217oC 260oC 245oC A1 marking code amplifier Y2 MARKING HE6028	PDF
Contextual Info: PD - 94919 IRG4BC10SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in	Original	IRG4BC10SPbF O-220AB O-220AB 10NTROLLING O-220AB.	PDF
t416 Abstract: 817 CN Contextual Info: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE	OCR Scan	PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN	PDF
114ET Abstract: PDTA114E PDTC114E Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES • Built-in bias resistors R1 and R2	OCR Scan	PDTC114ET MAM097 PDTA114ET. 115002/00/07/pp8 114ET PDTA114E PDTC114E	PDF
AN 6752 Contextual Info: DISCRETE SEMICONDUCTORS Objective specification Supersedes data of 1998 May 18 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA114TT FEATURES • Built-in bias resistor R1 typ. 10k£2	OCR Scan	PDTA114TT MAM286 114TT. 115002/00/03/pp8 AN 6752	PDF
2sk 4207 Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent Contextual Info: CONTENTS Index . 5 General Information . 9	Original	D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent	PDF
hitachi j50 Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent Contextual Info: CONTENTS Index . 5 General Information . 9	Original	D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent	PDF