PDM41024SA Search Results

PDM41024

Contextual Info: PDM41024 1 Megabit Static RAM 128K x 8-Bit Description Features n High-speed access times Com’l: 10, 12 and 15 ns Ind’l: 12 and 15 ns n Low power operation typical - PDM41024SA Active: 450 mW Standby: 50 mW - PDM41024LA Active: 400 mW Standby: 25mW n

Contextual Info: PDM41024SA PDM41024LA Paradigm 1 Megabit Static RAM 128Kx 8-Bit Features Description □ H igh speed access times Com 'l: 1 0,12,15,17, 20 and 25 ns Ind'l: 15,17,20, and 25 ns The PDM41024 is a high-performance CM OS static RAM organized as 131,072 x 8 bits. This product is

Contextual Info: Paradigm' fc^mcno PDM41024SA PDM41024LA OQODBTl H43 Ip * t 1 Megabit Static RAM 128Kx 8-Bit Features Description □ High speed access times Com'l: 12,15,17,20 and 25ns Ind'l: 20,25, and 35ns M il: 20,25, and 35ns The PDM41024 is a high performance CMOS static

Contextual Info: Paradigm ' PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description □ High-speed access times Com'l: 1 0 ,1 2 ,1 5 ,1 7 and 20 ns Ind'l: 12,15,17 and 20 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: tlAK 7 1991 PARADIGM 1 Megabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20 ,2 5 ,3 5 and 45ns M il: 25, 35, 45, and 55ns □ Low power operation - PDM41024S Active: 400m W typ. Standby: 400m W (typ.)

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: Paradigm ' PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description □ High-speed access times Com'l: 10,12 and 15 ns Ind'l: 12 and 15 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. Writing is accomplished when the write enable WE and the

PDM41024

Contextual Info: PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description • High-speed access times Com’l: 10, 12, 15, 17 and 20 ns Ind’l: 12, 15, 17 and 20 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is produced in Paradigm’s proprietary CMOS

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in