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shct Abstract: WE VQE 24 E IRGTDN150M12 IR 501 Contextual Info: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V	OCR Scan	IRGTDN150M12 100nH C-574 4flSS452 002D3b4 shct WE VQE 24 E IRGTDN150M12 IR 501	PDF

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Abstract: WE VQE 24 E IRGTDN150M12 IR 501
Contextual Info: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V

OCR Scan

IRGTDN150M12 100nH C-574 4flSS452 002D3b4 shct WE VQE 24 E IRGTDN150M12 IR 501

PDF