PD918 Search Results

IRFIB5N65A

Contextual Info: PD-91816B IRFIB5N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† Benefits l Low Gate Charge Qg results in Simple Drive Requirement

1N6844U3

Abstract: JANS1N6844U3 15LJQ100 JANTX1N6844U3 JANTXV1N6844U3 1n6844
Contextual Info: PD-91855B 15LJQ100 JANS1N6844U3 JANTX1N6844U3 JANTXV1N6844U3 15A, 100V SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES REF: MIL-PRF-19500/679 Major Ratings and Characteristics Description/Features Characteristics Limits IF AV Rectangular Waveform 15 A VRRM 100

Contextual Info: I . I PD-91814A International M R Rectifier SMPSM0SFET IRFSL9N60A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • This device is only for through hole application.

Contextual Info: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple

Gate Driver of IRF1404

Abstract: IRF1404 PD-91896F
Contextual Info: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A†

Contextual Info: PD-91860J IRHNA57160 JANSR2N7469U2 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/673 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) RDS(on) 0.012Ω ID QPL Part Number 75A* JANSR2N7469U2

DIODE SMD 55

Contextual Info: PD-91852I IRHNA57064 JANSR2N7468U2 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/673 5 Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) RDS(on) ID QPL Part Number 0.0056Ω 75A* JANSR2N7468U2

JANS1N6844U3

Abstract: 1N6844U3 1N6844U JANTXV1N6844U3
Contextual Info: PD-91855C 15LJQ100 JANS1N6844U3 JANTX1N6844U3 JANTXV1N6844U3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 15Amp, 100V REF: MIL-PRF-19500/679 Major Ratings and Characteristics Description/Features Characteristics Limits IF AV Rectangular Waveform 15 A VRRM 100

Contextual Info: PD-91866A International IOR Rectifier IRF7663 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low O n-Resistance P-Channel M O SFET Very Small SOIC Package Low Profile <1.1 mm A vailable in Tape & Reel V d s s = -2 0 V R ü S (o n ) =

Contextual Info: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

400V to 12V DC Regulator

Contextual Info: PD-91863E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number

Contextual Info: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

AN1001

Abstract: IRFBA22N50A 90137
Contextual Info: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Contextual Info: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier

IRF7663

Contextual Info: PD-91866B IRF7663 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.020Ω

JANSR2N7463T2

Abstract: IRHF7330SE
Contextual Info: PD-91864B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number

Contextual Info: I , I PD-91811 International 3BR Rectifier IR F B 9N 60A HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: PD-91850C International IOR Rectifier IRF7220 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -14V R ü S o n = 0.0120 . Description T h e s e P -C h a n n e l M O S F E T s from International Rectifier

Contextual Info: PD-91843 International IO R Rectifier IR L B L 1 3 0 4 HEXFET Power MOSFET • • • • • • • >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application

Contextual Info: , . I PD-91809B I n t e r n a t io n a l MR Rectifier IRFB11N50A s m p s m o s fe t HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 500V Rds(on) max 0.52Î2 Id 11A

IRF1404

Abstract: Gate Driver of IRF1404 PD-91896F Gate Driver for IRF1404 tr irf1404 irf1404 to220ab ir
Contextual Info: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A†

Contextual Info: PD-91887D 8CLJQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 8Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 8CLJQ045 Units IF AV Rectangular Waveform 8 A VRRM (Per Leg) 30 V IFSM @ tp = 8.3ms half-sine 80 A 0.58 V (Per Leg)

Contextual Info: PD-91882A IR2113E6 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

Contextual Info: PD-91863E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number