PD89 Search Results

avalanche 1550nm photodiode 5 Ghz

Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.

30h80

Abstract: avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed
Contextual Info: M IT S U B IS H I InGaAs P H O TO DIO DES PDSXX2 VîS* F O R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME S E R IE S 1=24=102^ 0014251 T EIMITS 31E D r^rm-o7 PD3002, PD8932 DESCRIPTION FEATURES The P08XX2 series are InGaAs avalanche photodiodes de­

avalanche photodiodes

Abstract: PD8001
Contextual Info: M IT S U B IS H I InGaAs PH O T O DIO DES PDSXX1 SERIES F O R O P T IC A L C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi EHMIT5' 31E D • T '- M l - c r ç P D 8001, PD8931 DESCRIPTION FEATURES The P D 8 X X t series are In G aA s avalanche photodiodes d e ­

photo diode

Abstract: 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode
Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • φ35 µ m active diameter a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving

InGaAs Photodiode 1550nm

Abstract: avalanche photodiode ingaas ghz PD893E6
Contextual Info: MITSUBISHI ELECTRIC CORPORATION * DATE: SPECIFICATION -SHEET 1 PREPARED BY: CHECKED BY: Y.Tanaka APPROVED BY: I I I I 1 lU U r u p S Aa ro Un I I : PD893E6 1. TYPE 2. APPLICATION : OPTICAL COMMUNICATION 3. STRUCTURE : <J>20 jim InGaAs AVALANCHE PHOTODIODE

avalanche diode

Abstract: Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz PD8042 Avalanche diodes ir photodiode wavelength
Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 DISCRIPTION FEATURES PD8XX2 is an InGaAs avalanche photodiode suitable for • Active diameter 50µm receiving the light having low noise, a wavelength band of • Low

PD8043

Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

PD8042

Abstract: PD893D2 PD8932 PD893D
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

PS224

Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
Contextual Info: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH

MRC D6 16A

Contextual Info: Cover Marvell PXA270 Processor Developers Manual Doc. No. MV-S301039-00 , Rev. A April 2009 Marvell. Moving Forward Faster Released PXA270 Processor Developers Manual Document Conventions Note: Provides related information or information of special importance.

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 5 0 /im suitable for receiving the light having low noise, a wavelength band of • L o w noise

mitsubishi avalanche photodiode ingaas ghz

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise

Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

sony ps3 eye camera

Abstract: PXA272 ED101 transistor PXA271 PXA27x ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310
Contextual Info: Intel PXA27x Processor Family Developer’s Manual January 2006 Order Number: 280000-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTELR PRODUCTS. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 50><m suitable for receiving the light having low noise, a wavelength band ot • L o w noise

ml976h6f

Contextual Info: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ

PD89

Contextual Info: P a s s i v Ajiacovi p o n e n t s C o ^ Æ R \ - & '\A ••.•o'.vhvf P r r r h ic t s N ew Products Frequency Range MHz Description Part No. Connectors 800-900 890-960 1700-1900 2,3,4,6 and 8-way Power dividers SMA Jack 2089 Series tr H 10-3000 10-3000

FU-456RDF

Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

PS224

Abstract: PD515 PD516 ps235 PD245 PS890 pd845 PD215 pd26 PD814
Contextual Info: POWER SUPPLY MODEL • 1 WATTS OF ISOLATED OUTPUT POWER • SINGLE OR DUAL OUTPUTS • PRINTED CIRCUIT MOUNTING ° LESS THAN 3/4 CUBIC INCH • PRINTED CIRCUIT MOUNTING ELECTRICAL SPECIFICATIONS Regulation for Input. .+ .5%

85T03GH

Abstract: L1085DG L1117LG C3209 transistor pc890 transistor C3795 c3746 transistor ADP3418K transistor R3907 transistor c3789
Contextual Info: 5 4 3 2 1 P5BW-MB Revision: 1.00 - 03/29/2006 VRD 11 on Board Intel Pentium processor 133/200/266 MHz Prescott & Cedar Mill & Presler & Conroe LGA-775 Pin Socket-T D 1.2V & STANDBY REGULATOR DATA CNTL ADDR 133/200/266 MHz D 100MHz CLOCK CK-505 SSOP 96 MHz

IT8500E-L

Abstract: it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M
Contextual Info: 5 4 3 2 1 K42F SCHEMATIC For BOM Rev1.0 Power VCORE Page 80 System D Page 81 BLOCK DIAGRAM D 1.5VS & 1.05VS Page 82 DDR & VTT Page 83 HDMI HDMI AMD PARK-XT-S3 DDR3 800/1066MHz CPU PCIE x16 ARRANDALE +2.5VS DDR3 SO-DIMM Page 84 Page 16~18 CRT CRT LVDS Page 70

650nm laser diode 200mw

Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

IT8500E-L

Abstract: it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00
Contextual Info: 5 4 SYSTEM PAGE REF. Content PAGE D C B A 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 38 40 41 42 43 44 45 46 47 48 50 51 52 53 56 57 60 61 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND