PD7XX8 Search Results

Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION P D 7X X 8 s e rie s are InG aA s pin p h o to d io d e w h ic h has a PD 7XX8 is s u ita b le band of fo r </>80 fx m active diam eter • l0 0 0 ~ 1 6 0 0 n m sensitive area o f <j>80 ¡1 m.

PD708B8

Abstract: PD7XX8 PD7088 PIN 1300nm
Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD7XX8 series are InGaAs pin photodiode which has a • l0 0 0 ~ 1 6 0 0 n m wavelength band sensitive area of <j>80 ¿¡m. PD7XX8 is w a ve le n g th s u ita b le

Photo Diodes

Abstract: "photo diodes"
Contextual Info: MITSUBISHI PHOTO DIODES PD7XX13 SERIES InGaAs PIN PHOTO DIODES Feature DESCRIPTION 0 B u it in GaAs Pre-amplifier with AGC function ^Single 5.0 supply voltage for Pre-amplifier ^D ifferential output ^ B a ll lens cap PD7XX8 Series are a 02O|xm InGaAs pin photodiodes

PD708C8

Abstract: PD7XX8 Photo Diodes PD7088 InGaAs mitsubishi receiver
Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES PD7088,PD708C8 TYPE NAME DESCRIPTION FEATURES PD7XX8 series are InGaAs pin photodiode which has a • φ80µm active diameter sensitive area of φ80µm. • 1000 ~1600nm wavelength band • Small dark current

708B

Abstract: d708b
Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION P D 7X X 8 s e rie s are In G a A s pin p h o to d io d e w h ic h ha s a PD 7XX8 is w a v e le n g th s u ita b le band of fo r • <f 80 fx m active diam eter • l0 0 0 ~ 1 6 0 0 n m

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

ml976h6f

Contextual Info: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ

FU-456RDF

Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

650nm laser diode 200mw

Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

laser diode DVD 300mw

Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information