PD55035S ST Search Results

PD55035-E

Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package

PD55035S

Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

Z9 TRANSISTOR SMD

Abstract: arco 406 6 pin TRANSISTOR SMD Z8
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD55035 PD55035S S2186
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

PD550

Abstract: arco 406 transistor SMD 520
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package

55035

Abstract: 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S PD55035 930 diode smd
Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

ZENER DIODE 5.1V

Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

AN1294

Abstract: PD55035 PD55035S
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

pd55035

Abstract: smd transistor code A4
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

EPIRB

Abstract: SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm
Contextual Info: LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ [dB] VDD [V] Class Eff. (Typ) [%] Package PD54003 500 3 12 7.5 AB 55 PowerSO-10RF• PD54008

SD57045

Abstract: PD55003L "class AB Linear" hf DB-54008L-830 PD84001 SD2942 smd code ab PD55015 PD57030S PD85015
Contextual Info: Radio Frequency technologies for innovative solutions Selection guide July 2006 www.st.com/rf LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ