PD448 Search Results

PD448012-X

Abstract: 12X18 PD448012
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The μPD4482161 is a 524,288-word by 16-bit, the μPD4482181 is a 524,288-word by 18-bit, the μPD4482321 is a 262,144-word by 32-bit and the μPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The μPD4482163 is a 524,288-word by 16-bit, the μPD4482183 is a 524,288-word by 18-bit, μPD4482323 is a 262,144word by 32-bit and the μPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482161, 4482181, 4482321, 4482361 8M ビット CMOS シンクロナス高速 SRAM フロー・スルー・オペレーション μPD4482161（524,288 ワードx16 ビット），μPD4482181（524,288 ワード×18 ビット），μPD4482321（262,144

va44a

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD4481162, 4481182, 4481322, 4481362 8M ビット ZEROSBTM SRAM パイプライン・オペレーション μPD4481162（524,288 ワードx16 ビット），μPD4481182（524,288 ワード×18 ビット），μPD4481322（262,144

PD4481161

Abstract: m155
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD4481161 is a 524,288-word by 16-bit, the μPD4481181 is a 524,288-word by 18-bit, the μPD4481321 is a 262,144-word by 32-bit and the μPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

PD448012-X

Abstract: Cxxx uPD448012-X NEC marking BX
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The μPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

UPD448012GY-B55X-MJH-A

Abstract: uPD448012GY-B70X-MJH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

100-PIN PLASTIC LQFP NEC

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482162, 4482182, 4482322, 4482362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The μPD4482162 is a 524,288-word by 16-bit, the μPD4482182 is a 524,288-word by 18-bit, μPD4482322 is a 262,144word by 32-bit and the μPD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

c60 equivalent

Abstract: marking A44 MARKING A50
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4481162, 4481182, 4481322, 4481362 8M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD4481162 is a 524,288-word by 16-bit, the μPD4481182 is a 524,288-word by 18-bit, the μPD4481322 is a 262,144-word by 32-bit and the μPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161-Y is a 524,288-word by 16-bit, the µPD4481181-Y is a 524,288-word by 18-bit, the µPD4481321Y is a 262,144-word by 32-bit and the µPD4481361-Y is a 262,144-word by 36-bit ZEROSB static RAM fabricated

a65y

Abstract: PD4481161 LQFP14 448136
Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD4481161, 4481181, 4481321, 4481361 8M ビット ZEROSBTM SRAM フロー・スルー・オペレーション μPD4481161（524,288 ワードx16 ビット），μPD4481181（524,288 ワード×18 ビット），μPD4481321（262,144

uPD448012GY-B70X-MJH

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

PD448012-X

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

A-44440

Abstract: NS225 PD4482322
Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482162, 4482182, 4482322, 4482362 8M ビット CMOS シンクロナス高速 SRAM パイプライン・オペレーション シングル・サイクル・ディセレクト μPD4482162（524,288 ワードx16 ビット），μPD4482182（524,288 ワード×18 ビット），μPD4482322（262,144

pd448

Abstract: GW 94 H
Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482163, 4482183, 4482323, 4482363 8M ビット CMOS シンクロナス高速 SRAM パイプライン・オペレーション ダブル・サイクル・ディセレクト μPD4482163（524,288 ワードx16 ビット），μPD4482183（524,288 ワード×18 ビット），μPD4482323（262,144

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD4464

Contextual Info: SEC //P D 4 4 6 4 8,192 X 8-B IT STATIC CMOS RAM NEC Electronics Inc. Pin Configuration Description T h e //P D 4 4 6 4 is a high-speed 8,192-word by 8-b it static RAM fabricated with advanced silicon-gate technology. Full C M O S storage cells with six transistors make the