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    A65Y Search Results

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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK290A65Y,S4X

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    Toshiba America Electronic Components TK380A65Y,S4X

    MOSFET N-Channel Enhancement Mode 650V 3-Pin TO-220SIS - Rail/Tube (Alt: TK380A65Y,S4X)
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    Vyrian TK380A65Y,S4X 14,303
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    Toshiba America Electronic Components TK560A65Y,S4X

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    Toshiba America Electronic Components TK290A65Y,S4X(S

    Mosfet, N-Ch, 650V, 11.5A, To-220Sis; |Toshiba TK290A65Y, S4X(S
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    Toshiba America Electronic Components TK560A65Y,S4X(S

    Mosfet, N-Ch, 650V, 7A, To-220Sis; |Toshiba TK560A65Y, S4X(S
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    A65Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The μPD4482161 is a 524,288-word by 16-bit, the μPD4482181 is a 524,288-word by 18-bit, the μPD4482321 is a 262,144-word by 32-bit and the μPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with


    Original
    pd4482161288-word16-bitpd4482181+418-bitpd4482321144-word32-bit PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    pd4432118132m-bit152-word18-bit+3pd44321361576-word36-bit PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161-Y, 4482181-Y, 4482321-Y, 4482361-Y 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161-Y is a 524,288-word by 16-bit, the µPD4482181-Y is a 524,288-word by 18-bit, the µPD4482321-Y is a


    Original
    pd4482161-y4482181-y4482321-y4482361-y+4288-word16-bitpd4482181-y18-bit PDF

    Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD4482161, 4482181, 4482321, 4482361 8M ビット CMOS シンクロナス高速 SRAM フロー・スルー・オペレーション μPD4482161(524,288 ワードx16 ビット),μPD4482181(524,288 ワード×18 ビット),μPD4482321(262,144


    Original
    pd4482161pd4482181pd4482321pd4482361262+5c-a65-a75-a85-c75-c85c-a65y-a75y-a85y-c75y-c85yns133ns117ns100 PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


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    pd4432118132m-bit152-word18-bit+3pd44321361576-word36-bit PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is a 1,048,576-word by 32-bit and the µPD44322361 is a 1,048,576-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using


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    pd4432218132m-bit152-word18-bit+4pd44322321576-word32-bitpd44322361 PDF

    PD4481161

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with


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    pd4481161288-word16-bitpd4481181+418-bitpd4481321144-word32-bit PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


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    pd4432118232m-bit152-word18-bit+3pd44321362576-word36-bit PDF

    PD4481161

    Abstract: m155
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD4481161 is a 524,288-word by 16-bit, the μPD4481181 is a 524,288-word by 18-bit, the μPD4481321 is a 262,144-word by 32-bit and the μPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with


    Original
    pd4481161288-word16-bitpd4481181+518-bitpd4481321144-word32-bitm155 PDF

    M15958

    Abstract: MARKING C75
    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    pd4432118132m-bit152-word18-bit+5pd44321361576-word36-bitm15958marking c75 PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with


    Original
    pd4482161288-word16-bitpd4482181+418-bitpd4482321144-word32-bit PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161-Y is a 524,288-word by 16-bit, the µPD4481181-Y is a 524,288-word by 18-bit, the µPD4481321Y is a 262,144-word by 32-bit and the µPD4481361-Y is a 262,144-word by 36-bit ZEROSB static RAM fabricated


    Original
    pd4481161-y4481181-y4481321-y4481361-y+4288-word16-bitpd4481181-y18-bit PDF

    a65y

    Abstract: PD4481161 LQFP14 448136
    Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD4481161, 4481181, 4481321, 4481361 8M ビット ZEROSBTM SRAM フロー・スルー・オペレーション μPD4481161(524,288 ワードx16 ビット),μPD4481181(524,288 ワード×18 ビット),μPD4481321(262,144


    Original
    pd4481161pd4481181pd4481321pd4481361262+8-a65-a75-a85-a65y-a75y-a85y-c75-c85-c75y-c85yc-a65-a75-a85-c75-c85c-a65y-a75y-a85y-c75y-c85yns133a65ylqfp14448136 PDF

    M15502

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161-Y is a 262,144-word by 16-bit, the µPD4442181-Y is a 262,144-word by 18-bit, the µPD4442321-Y


    Original
    pd4442161-y4442181-y4442321-y4442361-y+5144-word16-bitpd4442181-y18-bitm15502 PDF