PD42644 Search Results

83TL-7E07A

Abstract: 42644LA-80L
Contextual Info: SEC PD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The £/PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

D4264400

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability

NEC uPD

Abstract: 4264405 D42S65405
Contextual Info: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility

0829A

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿ PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ^P D 4 2 6 4 4 0 0 ,4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

UPD4264405

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >PD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :

d42s65405g5

Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µPD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

u729

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /PD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /PD4264400, 4265400 64 M BIT DYNAMIC RAM 16M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The /PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¡PD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

4265405

Abstract: 42S65405
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: PRELIM INARY DATA SHEET M OS INTEG RATED CIRCUIT NEC PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /PD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PP4264400, 4 2 6 5 4 0 0 64 M BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD4264400,4265400 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low pow er consum ption.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM :

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :

Contextual Info: • •’er c m PD4264400, 4265400 16,777,216 X 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary S eptem ber 1993 Description RAS-only refreshing and 4096 address com binations of Ao - A ^ to perform CAS before RAS and hidden refresh­ ing of the mem ory during a 64-ms period. The