PD4216800G5 Search Results

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

Contextual Info: L4B7SE5 □ Q 4f l cì 7 3 M5T NECE NEC 16M DRAMs cont ORGANIZATION FEATURES PACKAGE 2M x 8 Fast-page access, 4K refresh, self-refresh 2M x 8 2M x 8 2M x 8 1 M x 16 1 M x 16 1 M x 16 1M x 16 Fast-page access, 4K refresh, self-refresh Hyper-page access, 4K refresh

42S17800

Abstract: UPD42S17800
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

TOED101

Contextual Info: NEC M OS INTEGRATED CIRCUIT /¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿iPD42S16800, 42S17800 can execute CAS before RAS self refresh.

D42S17800-70

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.

UPD42S1

Abstract: 421780
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¿¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynam ic RAMs. The fast page m ode capability realize high speed access and low pow er consum ption.

TRA-8R

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800,4216800,4 2 S 1 78 0 0 ,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the jiPD42S16800, 42S17800 can execute CAS before RAS self refresh.

Contextual Info: SEC • •■ '*i pPD421x800/L, 42S1X800/L X = 6, 7 2,097,152 X 8-Bit Dynamic CMOS RAM NEC Electronics Inc. P relim inary Information S eptem ber 1992 Description The devices listed below are fast-page dynam ic RAMs organized as 2M words by 8 bits and designed to

IC-3190

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ///PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jiPD42S16800, 4216800, 42S17800, 4217800 are 2,097.152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.