PD 2061 A Search Results

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper

tt 2074

Contextual Info: 2061 2074 THRU 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2074B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and incandescent

GP027 diode

Abstract: GP027
Contextual Info: 2061 2069 r n iu 1 .5 A D A R I.IS C T O S SW ITCH ES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and incandescent

358CD

Abstract: 2980A 136s
Contextual Info: 2061 2074 THRl 1 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2074B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, m agnetic print hammers, multiplexed LED and incandescent

Contextual Info: TPS2061, TPS2062, TPS2063 TPS2065, TPS2066, TPS2067 www.ti.com SLVS490I – DECEMBER 2003 – REVISED OCTOBER 2009 CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2061 TPS2062 TPS2063 TPS2065 TPS2066 TPS2067 FEATURES APPLICATIONS • •

2SK772

Abstract: 140je N0239
Contextual Info: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C

2SK546

Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

2SK444

Contextual Info: I Ordering number: EN 1 4 2 0 A _ 2SK444 N-Channel Junction Silicon FET Video Camera Applications Features • Large |yfs| • Small cjss • Very low noise figure • High frequency, low noise amp Absolute Maximum Ratings/Ta = 25°C Drain to source voltage

2SK212

Abstract: tuner LG ht4 marking LM 2003A
Contextual Info: Ordering number:EN 661D 2SK212 N 0.66 ID I N-Channel Junction Silicon FET SA i YO FM Tuner Applications I FEATURES Ideal for FM tuners in low voltage radios, car radios, etc. Because it is compactly packaged, sets can be made compact. Small c r s s crss = 0.04 pF typ .

2SK223

Contextual Info: | Ordering number: EN6SSJ | H 7 T c? 7 0 7 f c i 0015L>42 3 5 T F e a tu re s • U ltra-high blocking voltage Vqds = —80V . • Due to low gate leakage cu rren t even under high voltages, it is suitable for a wide range of applications (Igdl = ln A /V o s^ 50V, I d = 1mA).

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

Contextual Info: Ordering number: EN 3 0 0 6 2SK 937 N o.3006 N -C hannel Ju n ctio n Silicon FET High-Frequency General-Purpose Amp Applications F e a tu r e s • Adoption of FBET process • L arge lyfsl • Sm all Ciss b s o lu te M a x im u m R a tin g s a t T a= 25°C

Contextual Info: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss

sj 2025

Abstract: 2SK333 2I k 2026 rifa
Contextual Info: SANYO SEMICONDUCTOR 3SE CORP D T W Q T b OOOßflöfi S T -2 7 -2 -7 Iffl N-Channel Junction Silicon Com posite FET .2 0 2 7 A Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range

2SK427

Abstract: I00MH to-92 .y1 2sk427 transistor
Contextual Info: Ordering number: EN 1404A _ 2SK427 N-Channel Junction Silicon FET AM Tuner, RF Amp Applications Use • AM tuner RF amp, low-noise amp Features • Large |yfs| • Very low noise figure • Small Cfss Absolute Maximum Ratings/Ta = 25°C Drain to source voltage

VLN 2003a

Abstract: bt 2025 2SK595
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

Contextual Info: International Recti fi 6 f IÔR PD -5.05 0B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT Features V • G en eratio n 4 IG BT tech nology • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200

2SK332

Abstract: TRANSISTOR IFW 2027A 100S 956c
Contextual Info: — • * i . wi u u uuuu i J D fcfad T-27-27 Ì- * - ' - 3 k L, _r \ ‘r^VeV; ytrj* ' N -C h an n el Junction Silicon C om posite FET 2027A Differential Amp Applications 956C Features • Excellent in thermal equilibrium and especially suited fo r first-stage differential amp o f D C amp

Contextual Info: APT50M50JFLL 500V POWER MOS 7 R 0.050Ω 71A FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M50L2LL 500V 89A 0.050Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT50M50L2FLL 500V 89A 0.050Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

GA75TS60U

Contextual Info: PD -50050C GA75TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

ge 142

Abstract: GA75TS60U MJ1008
Contextual Info: PD -50050D GA75TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA75TS60U

Contextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200