PD 2061 A Search Results
PD 2061 A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLE2061ACP |
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Excalibur JFET-Input High-Output-Drive uPower Operational Amplifier (Low-Power Version TLE2071) 8-PDIP 0 to 70 |
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TLE2061AIP |
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Excalibur JFET-Input High-Output-Drive uPower Operational Amplifier (Low-Power Version TLE2071) 8-PDIP -40 to 85 |
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TLE2061AID |
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Excalibur JFET-Input High-Output-Drive uPower Operational Amplifier (Low-Power Version TLE2071) 8-SOIC -40 to 85 |
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TLE2061ACPE4 |
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Excalibur JFET-Input High-Output-Drive uPower Operational Amplifier (Low-Power Version TLE2071) 8-PDIP 0 to 70 |
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TLE2061AMJGB |
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Excalibur JFET-Input Low Power High Drive Single Operational Amplifier 8-CDIP -55 to 125 |
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PD 2061 A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper |
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D50433B ULN2061M ULN2069B ULN2064/65B D50433Ã ULN2064LB ULN2068LB D504336 LN-2064/66B | |
tt 2074Contextual Info: 2061 2074 THRU 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2074B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, magnetic print hammers, multiplexed LED and incandescent |
OCR Scan |
ULN2061M ULN2074B ULN2064/65B ULN2062M LN2064J ULN2068LB B-1364A UDN2980A/EP/LW B-1365 tt 2074 | |
GP027 diode
Abstract: GP027
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ULN2061M ULN2069B ULN2062M 2064L ULN2068B/LB GP027 diode GP027 | |
358CD
Abstract: 2980A 136s
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ULN2064/65B ULN2061M ULN2074B ULN2062M ULN2064LB 2068B/LB 358CD 2980A 136s | |
Contextual Info: TPS2061, TPS2062, TPS2063 TPS2065, TPS2066, TPS2067 www.ti.com SLVS490I – DECEMBER 2003 – REVISED OCTOBER 2009 CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2061 TPS2062 TPS2063 TPS2065 TPS2066 TPS2067 FEATURES APPLICATIONS • • |
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TPS2061, TPS2062, TPS2063 TPS2065, TPS2066, TPS2067 SLVS490I TPS2061 TPS2062 TPS2063 | |
2SK772
Abstract: 140je N0239
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2SK772 SC-51 rO-92 3C-43 2SK772 140je N0239 | |
2SK546Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage |
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1790B l790B 2SK546 -10uA 2034/2034A SC-43 7tlt17D7b 2SK546 | |
2SK444Contextual Info: I Ordering number: EN 1 4 2 0 A _ 2SK444 N-Channel Junction Silicon FET Video Camera Applications Features • Large |yfs| • Small cjss • Very low noise figure • High frequency, low noise amp Absolute Maximum Ratings/Ta = 25°C Drain to source voltage |
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l420A 2SK444 -10/Xa 2034/2034A SC-43 7tlt17D7b | |
2SK212
Abstract: tuner LG ht4 marking LM 2003A
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2SK212 -10/xA 2034/2034A SC-43 7tlt17D7b tuner LG ht4 marking LM 2003A | |
2SK223Contextual Info: | Ordering number: EN6SSJ | H 7 T c? 7 0 7 f c i 0015L>42 3 5 T F e a tu re s • U ltra-high blocking voltage Vqds = —80V . • Due to low gate leakage cu rren t even under high voltages, it is suitable for a wide range of applications (Igdl = ln A /V o s^ 50V, I d = 1mA). |
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EN659J 2SK223 20mS/VDS 2034/2034A SC-43 7tlt17D7b | |
2SK595
Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
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DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552 | |
Contextual Info: Ordering number: EN 3 0 0 6 2SK 937 N o.3006 N -C hannel Ju n ctio n Silicon FET High-Frequency General-Purpose Amp Applications F e a tu r e s • Adoption of FBET process • L arge lyfsl • Sm all Ciss b s o lu te M a x im u m R a tin g s a t T a= 25°C |
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SC-43 rO-92 3C-43 | |
Contextual Info: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss |
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2SK1961 SC-43 rO-92 3C-43 | |
sj 2025
Abstract: 2SK333 2I k 2026 rifa
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2027a -10or T-91-20 SC-43 sj 2025 2SK333 2I k 2026 rifa | |
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2SK427
Abstract: I00MH to-92 .y1 2sk427 transistor
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OCR Scan |
l404A 2SK427 2034/2034A SC-43 7tlt17D7b I00MH to-92 .y1 2sk427 transistor | |
VLN 2003a
Abstract: bt 2025 2SK595
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OCR Scan |
7tn707b D0CH230 T-29-25 T-91-20 SC-43 VLN 2003a bt 2025 2SK595 | |
Contextual Info: International Recti fi 6 f IÔR PD -5.05 0B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT Features V • G en eratio n 4 IG BT tech nology • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200 |
OCR Scan |
GA75TS60U | |
2SK332
Abstract: TRANSISTOR IFW 2027A 100S 956c
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OCR Scan |
T-91-20 SC-43 2SK332 TRANSISTOR IFW 2027A 100S 956c | |
Contextual Info: APT50M50JFLL 500V POWER MOS 7 R 0.050Ω 71A FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT50M50JFLL | |
Contextual Info: APT50M50L2LL 500V 89A 0.050Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT50M50L2LL O-264 | |
Contextual Info: APT50M50L2FLL 500V 89A 0.050Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT50M50L2FLL O-264 | |
GA75TS60UContextual Info: PD -50050C GA75TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses |
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-50050C GA75TS60U GA75TS60U | |
ge 142
Abstract: GA75TS60U MJ1008
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-50050D GA75TS60U ge 142 GA75TS60U MJ1008 | |
GA75TS60UContextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 |
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GA75TS60U GA75TS60U |