PCH MOSFET MARKING CODE VISHAY SILICONIX Search Results

PCH MOSFET MARKING CODE VISHAY SILICONIX Result Highlights (5)

Part	Manufacturer	Description	Download
ICL7667MJA/883B	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)	PDF
5446/BEA	Rochester Electronics LLC	5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA)	PDF
54LS190/BEA	Rochester Electronics LLC	54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA)	PDF
MG80C186-10/BZA	Rochester Electronics LLC	80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA)	PDF
ICM7555MTV/883	Rochester Electronics LLC	ICM7555MTV/883 - Dual marked (5962-8950303GA)	PDF

PCH MOSFET MARKING CODE VISHAY SILICONIX Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
7130-1 transistor Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200	OCR Scan	SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X	PDF
Si5504DC-T1-E3 Abstract: Si5504DC Contextual Info: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21	Original	Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 18-Jul-08	PDF
Si5517DU Abstract: Si5517DU-T1-GE3 si5517 Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel	Original	Si5517DU 18-Jul-08 Si5517DU-T1-GE3 si5517	PDF
Si5513DC Abstract: Si5513DC-T1 Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2	Original	Si5513DC Si5513DC-T1 Si5513DC-T1--E3 08-Apr-05	PDF
Si5509DC Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V	Original	Si5509DC 2002/95/EC 11-Mar-11	PDF
Si5509DC Abstract: 60417 VISHAY diode MARKING ED Contextual Info: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a	Original	Si5509DC 18-Jul-08 60417 VISHAY diode MARKING ED	PDF
42138 Abstract: Si5513DC Si5513DC-T1 Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2	Original	Si5513DC Si5513DC-T1 Si5513DC-T1--E3 18-Jul-08 42138	PDF
SI5509DC Abstract: Si5509DC-T1-GE3 si5509dc-t1-e3 si5509 Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V	Original	Si5509DC 2002/95/EC 18-Jul-08 Si5509DC-T1-GE3 si5509dc-t1-e3 si5509	PDF
Si5513DC Abstract: Si5513DC-T1-E3 Contextual Info: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08	PDF
Si5517DU Contextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V	Original	Si5517DU 08-Apr-05	PDF
42138 Abstract: Si5513DC Si5513DC-T1 VISHAY diode MARKING EB Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2	Original	Si5513DC Si5513DC-T1 Si5513DC-T1--E3 S-42138--Rev. 15-Nov-04 42138 VISHAY diode MARKING EB	PDF
Si5513DC Abstract: Si5513DC-T1-E3 Contextual Info: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21	Original	Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11	PDF
Si5509DC Abstract: s417 Contextual Info: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a	Original	Si5509DC 08-Apr-05 s417	PDF
Si5515DC Abstract: Si5515DC-T1-E3 Contextual Info: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V	Original	Si5515DC 2002/95/EC 18-Jul-08 Si5515DC-T1-E3	PDF

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)	Original	Si1539CDL OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
N-Channel mosfet sot-363 Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)	Original	Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 N-Channel mosfet sot-363	PDF
Contextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V	Original	Si5517DU 51930--Rev. 12-Sep-05	PDF
Contextual Info: Si5519DU Vishay Siliconix New Product N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 VDS (V) N-Channel P-Channel 20	Original	Si5519DU Si5519DU-T1-E3 08-Apr-05	PDF
list of n channel fet Abstract: Si5511DC-T1-E3 Contextual Info: New Product Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET Power MOSFETs Qg (Typ) APPLICATIONS	Original	Si5511DC Si5511DC-T1-E3 08-Apr-05 list of n channel fet	PDF
Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)	Original	Si1539CDL OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)	Original	Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 11-Mar-11	PDF
si3585 Abstract: mosfet 23 Tsop-6 S1217 Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see	Original	Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3585 mosfet 23 Tsop-6 S1217	PDF
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see	Original	Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel	Original	Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

PCH MOSFET MARKING CODE VISHAY SILICONIX Search Results

PCH MOSFET MARKING CODE VISHAY SILICONIX Result Highlights (5)

PCH MOSFET MARKING CODE VISHAY SILICONIX Datasheets Context Search

7130-1 transistor

Si5504DC-T1-E3

Si5517DU

Si5513DC

Si5509DC

Si5509DC

42138

SI5509DC

Si5513DC

Si5517DU

42138

Si5513DC

Si5509DC

Si5515DC

N-Channel mosfet sot-363

list of n channel fet

si3585