PC6015
Contextual Info: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the
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pc6015 |
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PT6005
Abstract: VSC300
Contextual Info: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith
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32bflvsc300pt6005 |
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VGT300039
Abstract: PT6045 VGT300022 PT6005
Contextual Info: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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t3flfl34vgt350/vgt35385-micronvgt350/353+4vgt300039pt6045vgt300022pt6005
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R/CHN 041 diode
Contextual Info: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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vgt300r/chn 041 diode |
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VLSI Technology
Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
Contextual Info: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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vgt300vlsi technologykt 714schematic transistor modul trigger+6pt6005vlsi design physical verificationvlsi technology incpt6055gah 521fabrimex
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full subtractor circuit using decoder and nand ga
Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
Contextual Info: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array
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vgt200400-018-a-028full subtractor circuit using decoder and nand gafull subtractor circuit using nand gates+8pt60017474 d-flip floppt6011pt6021vlsi technologykt 0912pc6d10pt6005
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transistor t6055
Abstract: C6052P T6055 VGT300077 NAND Micron PT6001 KT 829 PC6D00
Contextual Info: V L S I TECHNOLOGY INC 1ÍE I 13afl3M7 D0G3SÖ4 S V L S I T echnology , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION ADVANCED DESIGN TOOLS • Advanced 1.0 m icron drawn) silicon gate technology The VGT300 Series of high-performance gate arrays is fabricated on an
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13afl3m7vgt300transistor t6055c6052p+6t6055vgt300077nand micronpt6001kt 829pc6d00
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PT6045
Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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vsc37085-micron000fit-42-41+2pt6045pt6005
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ST CHN 021
Abstract: 13003 PT6005 PT6001
Contextual Info: V L S I TECHNOLOGY INC IflE D VLSI T ech n o lo g y T36Ô347 DGD3E7ti 3 in c . VSC320 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL FEATURES • A dvanced 1-m icron drawn gate length , silicon gate C M O S , 2-layer metal technology • Fast design tu rn-around tim e w ith
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vsc320st chn 02113003pt6005+1pt6001
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130 nm CMOS standard cell library
Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Contextual Info: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS
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vgc450/vgc453vgc453vgc450130 nm cmos standard cell library+3180 nm cmos standard cell library synopsys130 nm cmos standard cell library stc4002-1
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nd02d2
Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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vgc450/vgc453vgc450/453nd02d2 |
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PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Contextual Info: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS
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vgc450/vgc453vgc453vgc450pt6042+2model values for 0.18 micron technology cmosnd02d2
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integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Contextual Info: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology
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vsc470integrated circuit tl 2262pt6042180 nm cmos standard cell library synopsys+3compass icnd02d20.03 um cmos technology
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PT6042
Abstract: PT6045 VSC350 PT6005 nd02d2
Contextual Info: V L S I TECHNOLOGY INC 47 E D =1350347 0 0 0 0 0 3 0 VTI V L S I Technology , in c VSC350 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Fast design turn-around time with COMPASS Design Automation’s advanced design tools and methodology
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vsc35085-micront-42-41pt6042+3pt6045pt6005nd02d2
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VGT200
Abstract: full subtractor circuit using decoder and nand ga
Contextual Info: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array
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vgt200400-018-a-028full subtractor circuit using decoder and nand ga |
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PT6045
Abstract: pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021
Contextual Info: 1.5ji ANALOG CELL LIBRARY • All cells have power down mode where appropriate. • All analog specifications are typical, 5 V, 25°C, and use a single 5 V supply, unless otherwise indicated. ANALOG-TO-DIGITAL CONVERTERS CELL NAME ADC4BT ADC10B ADC12B HADC8B
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adc10badc12b10-bit12-bit+12dac10b17utputpt6045pt6021pt6042pc6013pc6043pc6015pt6011pc6d10pc6001pc6021
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hp dv5 schematic diagram free
Abstract: schematic hp dv7 hp dv5 U804 u806 HOLTEK MICROELECTRONICS RTC001 U807 D ECHO schematic diagrams n117
Contextual Info: Workview Design Kit User's Manual July 1998 Version 1.00 Preliminary Holtek Microelectronics Inc. TABLE OF CONTENT Chapter 1. Introduction Chapter 2. Installation Chapter 3. Before you start Chapter 4. Viewdraw – Workview schematic capture tool Chapter 5.
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hp dv5 schematic diagram freeschematic hp dv7hp dv5u804+6u806holtek microelectronicsrtc001u807 decho schematic diagramsn117
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74XX573
Abstract: 13OO3 13603 74X245 VY86C129 "vlsi technology" 2903x
Contextual Info: V L S I TECHNOLOGY INC 47E D ^300347 QQQ7in VLSI Tech n o lo g y in c . 7 «VTI IL D D iD IM l^ W MEMC29K VY86C129 29000 FAMILY MEMORY CONTROLLER FEATURES 1/2/4-way Interleave ROM Controller • AMD 29000 RISC MPU-compatible chip set 2 chips Support for two HP-style Cartridge
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16/32-bit160-pinmemc29kvy86c129+832-bitmemc29k/lpic74xx57313oo31360374x245vlsi technology2903x
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PT6042
Contextual Info: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon
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t3flfl347vsc450t-42-41pt6042 |
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