PT6005
Abstract: VSC300
Contextual Info: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith
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32bfl
VSC300
PT6005
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VGT300039
Abstract: PT6045 VGT300022 PT6005
Contextual Info: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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T3flfl34?
VGT350/VGT353
85-micron
VGT350/353
VGT300039
PT6045
VGT300022
PT6005
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R/CHN 041 diode
Contextual Info: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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VGT300
R/CHN 041 diode
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PT6045
Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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VSC370
85-micron
000fiö
T-42-41
PT6045
PT6005
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PT6042
Abstract: PT6045 VSC350 PT6005 nd02d2
Contextual Info: V L S I TECHNOLOGY INC 47 E D =1350347 0 0 0 0 0 3 0 VTI V L S I Technology , in c VSC350 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Fast design turn-around time with COMPASS Design Automation’s advanced design tools and methodology
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VSC350
85-micron
T-42-41
PT6042
PT6045
PT6005
nd02d2
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