PBSS3540M Search Results

MLE20

Abstract: sc-101 r PBSS2540M PBSS3540M SC-101 MLE200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.5 A PNP low VCEsat BISS transistor Product specification 2003 Aug 12 Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M FEATURES QUICK REFERENCE DATA

Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

MLE20

Abstract: PBSS2540M PBSS3540M SC-101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.5 A PNP low VCEsat BISS transistor Product data sheet 2003 Aug 12 NXP Semiconductors Product data sheet 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M FEATURES QUICK REFERENCE DATA

MLE20

Abstract: biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC
Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

PBSS2540M

Abstract: PBSS3540M SC-101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat BISS transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

biss 0001

Abstract: PBLS2001D PBLS2003D PBLS2002D pbss4160dpn PBLS4003D PBLS4004Y SOT363 flash PBLS1503V PBLS4003V
Contextual Info: Single BISS transistors Double BISS transistors BISS loadswitches Low VCEsat BISS transistors selection guide Key features } Extensive range of BISS transistors } Low collector-emitter saturation voltage VCEsat , e.g. 235 mV @ 5.8 A } Up to 5.8 A collector current capability I C

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

NXP PN544 user manual

Abstract: PN544 user manual NXP PN544 PN544 PN544 NFC controller data sheet nfc PN544 NXP PN544 Antenna Design Guide PN544 NFC controller nxp pn544 antenna design PN544 hardware design guide
Contextual Info: Application guide Portable devices and mobile handsets Introduction Your partner for portable devices and mobile handsets NXP Semiconductors is a recognized leader in portable and mobile applications. We offer a comprehensive portfolio of best-in-class solutions

BC817

Abstract: PBSS4140T PBSS4240V PBSS5240V SC-101 SC-89 pbss3515vs MSD970 pbss2540F PBSS5540Z
Contextual Info: Low VCEsat BISS transistors Breakthrough in Small-Signal Continuing Philips innovation in small-signal discretes our latest BISS transistors deliver performance levels normally associated with medium-power applications. By providing power sensitive applications in consumer and professional applications with

TL431 SOT323

Contextual Info: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,

PBSS4140

Abstract: PBSS4350Z, PBSS4350X, PBSS4350T pbss5140t PBSS5140T, PBSS5140U BC817 PBSS4140T PBSS4240V PBSS5240V SC-101 SC-89
Contextual Info: Low VCEsat BISS transistors Breakthrough in Small-Signal Continuing Philips innovation in small-signal discretes our latest BISS transistors deliver performance levels normally associated with medium-power applications. By providing power sensitive applications in consumer and professional applications with

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

907 TRANSISTOR smd

Abstract: PDTA144E catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller smd transistor y5 mosfet triggering circuit for inverter y4 smd transistor
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 4 Semiconductors NOVEMBER 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. 74LVC1GX04 High performance crystal driver 2. BTA208X-1000B 1000 V high commutation, 3 quadrant triac

PBSS2540M

Abstract: PBSS3540M SC-101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat BISS transistor Product specification 2003 Jul 22 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA

Contextual Info: Issue Number | 001 June 2011 New Product Announcement BJT in DFN1006 Bipolars in Super-Small-Size DFN1006 Package Save Space Diodes Incorporated has extended its family of small-signal Bipolar transistors in the tiny DFN package, measuring only 1 x 0.6mm, yet delivering

tda8510j 2.1 creative amplifiers

Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
Contextual Info: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������

Contextual Info: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

2PD601A

Abstract: 1PS10SB63 SOT346 ZENER 2PC4081 2PC4617M SC-101 SC-75 SC-89 BAT16 stamping process
Contextual Info: SOT88x package platform Maximum functionality, minimum space Philips’ continues to address the trend for smaller, more energyefficient solutions with the launch of its innovative SOT88x package platform. A milestone in package miniaturization, the ultra-small SOT88x brings unique space saving and power

Transistor SMD SOT363 SC70 SC88

Abstract: Transistor SMD SOT363 SC70 sc 107 transistor d2 SMD TRANSISTORs pnp npn SOT363 flash NPN medium power transistor in a smd PBSS4350Z, PBSS4350X, PBSS4350T PBSS5350Z, PBSS5350X, PBSS5350T PBSS5140D PBSS5140T
Contextual Info: Semiconductors Date of release: April 2004 Philips’ Low VCEsat BISS transistors portfolio Key features • Extensive range of BISS transistors • Low collector-emitter saturation voltage VCEsat, e.g. < 220 mV @ 5 A • Up to 5 A collector current capability IC

TRANSISTOR S1A 64 smd

Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

biss 0001

Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
Contextual Info: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat BISS transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M QUICK REFERENCE DATA FEATURES