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    PBSS2540MB Search Results

    PBSS2540MB Datasheets (2)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PBSS2540MB
    NXP Semiconductors 40 V, 0.5 A NPN low VCEsat (BISS) transistor Original PDF 463.43KB 12
    PBSS2540MB,315
    NXP Semiconductors PBSS2540MB - 40 V, 0.5 A NPN low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF 463.44KB 12
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    Nexperia PBSS2540MB-QYL

    PBSS2540MB-Q/SOT883B/XQFN3 - Tape and Reel (Alt: PBSS2540MB-QYL)
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    Avnet Americas PBSS2540MB-QYL Tape & Reel 30,000
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    Nexperia PBSS2540MB,315

    Trans GP BJT NPN 40V 0.5A 3-Pin DFN T/R - Tape and Reel (Alt: PBSS2540MB,315)
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    Avnet Americas PBSS2540MB,315 Tape & Reel 53 Weeks, 1 Days 30,000
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    Newark () PBSS2540MB,315 Tape & Reel 100
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    PBSS2540MB,315 Cut Tape 5
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    Avnet Silica PBSS2540MB,315 32 Weeks 10,000
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    NXP Semiconductors PBSS2540MB,315

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    NexGen Digital PBSS2540MB,315 12,560
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    Nexperia PBSS2540MB

    Small Signal Bipolar Transistor
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    Vyrian PBSS2540MB 5,236
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    PBSS2540MB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pbss2540mbdfn1006b-3ot883bpbss3540mb+1aec-q101 PDF

    Contextual Info: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pbss2540mbdfn1006b-3ot883bpbss3540mb+1aec-q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original
    dfn1006d-2od882ddfn1010d-3ot1215+16dfn2020md-6ot1220dfn1608d-2od1608dsn0603od962circuit diagram wireless spy camerapdtb123yip4303cx4dual cc baw623267 tsop6pcmf2dfn1bst60pumd4pdtb123epdta143 PDF

    TL431 SOT323

    Contextual Info: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


    Original
    an11045tl431 sot323 PDF

    Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    pbss3540mbot883bpbss2540mbaec-q101 PDF

    MLE20

    Abstract: biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC
    Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    pbss3540mbot883bpbss2540mbaec-q101+4mle20biss 0001transistor smd marking code 04marking code smd ic PDF