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    PBSS3540MB Search Results

    PBSS3540MB Datasheets (2)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PBSS3540MB
    NXP Semiconductors 40 V, 0.5 A PNP low VCEsat (BISS) transistor Original PDF 461.58KB 12
    PBSS3540MB,315
    NXP Semiconductors PBSS3540MB - 40 V, 0.5 A PNP low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF 461.58KB 12
    SF Impression Pixel

    PBSS3540MB Price and Stock

    Nexperia

    Nexperia PBSS3540MB-315

    TRANS PNP 40V 0.5A DFN1006B-3
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    DigiKey () PBSS3540MB-315 Tape & Reel 10,000
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    PBSS3540MB-315 Cut Tape 1
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    PBSS3540MB-315 Digi-Reel 1
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    Nexperia PBSS3540MB,315

    Trans GP BJT PNP 40V 0.5A 3-Pin DFN T/R - Tape and Reel (Alt: PBSS3540MB,315)
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    Avnet Americas PBSS3540MB,315 Tape & Reel 53 Weeks, 1 Days 30,000
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    Mouser Electronics () PBSS3540MB,315 163
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    PBSS3540MB,315 163
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    Nexperia PBSS3540MB

    Small Signal Bipolar Transistor
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    Vyrian PBSS3540MB 3,652
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    PBSS3540MB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    PBSS3540MB OT883B PBSS2540MB. AEC-Q101 PDF

    MLE20

    Abstract: biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC
    Contextual Info: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    PBSS3540MB OT883B PBSS2540MB. AEC-Q101 MLE20 biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original
    DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    TL431 SOT323

    Contextual Info: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


    Original
    AN11045 TL431 SOT323 PDF

    Contextual Info: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101 PDF

    Contextual Info: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101 PDF