PARTMARKING AT SOT223 Search Results

FZT796A

Abstract: FZT696B cal 3200 emitter PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT DSA003717
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A 1.0 ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High V CE0 / Very Low Saturation Voltage * Gain of 400 at lc=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B ABSOLUTE MAXIMUM RATINGS.

T6705

Abstract: NPN/PNP transistor sot223 zdt705 complementary npn-pnp power transistors ZDT605 ZDT6705 DSA0037253 DSA003725 transistor ic1A
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6705 ABSOLUTE MAXIMUM RATINGS.

complementary npn-pnp

Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT796A ISSUE 3 - OCTOBER 1995 FEATURES * * 200 V olt VCE0 Gain o f 250 at lc=0.3 Am ps * Very lo w saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT696B PARTMARKING DETAIL-

t1053

Abstract: ZDT1053 DSA003723
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 2 - APRIL 2000 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER

t605

Abstract: dual npn 500ma ic 324 ZDT605 DSA003724
Contextual Info: SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ZDT605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T605 PARAMETER SYMBOL Collector-Base Breakdown

T694

Abstract: PARTMARKING at sot223 ZDT694 DSA003726
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ZDT694 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T694 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MIN. TYP.

ZDT758

Abstract: t758 DSA003727
Contextual Info: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ZDT758 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T758 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

t1053

Abstract: ZDT1053 ic 245
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 - NOVEMBER 1995 ZDT1053 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1053 ABSOLUTE MAXIMUM RATINGS.

partmarking 6 C

Abstract: PARTMARKING at sot223 ZDT619
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT619 ISSUE 1 - NOVEMBER 1995 ZDT619 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER

FZT757

Abstract: 200V 100MA NPN t6757 FZT657
Contextual Info: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757

ZDT717

Abstract: T-717 DSA003727
Contextual Info: SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT717 ZDT717 ISSUE 1 - NOVEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T717 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET o FEATURES: * VDS - 200V * n •. ^DS ON ‘ 10ÎÎ w PARTMARKING DETAIL - ZVN2120 K s s D Q ABSOLUTE MAXIMUM RATINGS. VALUE UNIT PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C

ZVN2120

Abstract: ZVN2120G DSA003736
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS ON - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C

m4306n

Abstract: ZDM4306N DSA003723 M4306
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ZDM4306N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C

ZDM4206N

Abstract: DSA003722
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – M4206N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C

FZT755

Abstract: fzt655 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS FZT655 ✪ C 0.18 COMPLEMENTARY TYPE – FZT755 - Normalised Gain % IC/IB=10 0.10 h V - (Volts) 100 0.01 0.1 1 10

FZTA14

Abstract: FZTA63 FZTA64
Contextual Info: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 TYPICAL CHARACTERISTICS 1.5 1.5 +25° C 1.0 1.0 0.5 0.5 I+/I*=1000 10m 100m 1 1m 10m 100m 1 10 IC - Collector Current A VCE(sat) v IC 45k PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES:

FZT657

Abstract: FZT757 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain % 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps)

FZT757

Abstract: FZT657 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)

FZT869

Abstract: DSA003718
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER

FZT753

Abstract: FZT653 DSA003715
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –

FZT649

Abstract: FZT749 transistor FZT749
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749