PART MARKING ST MOSFETS Search Results

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

FERRITE TOROIDAL CORE DATA

Abstract: 200 pF air variable capacitor
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

SD2941-10

Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

sd2943

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

Arco 423

Abstract: choke vk200 sd2931-10w
Contextual Info: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

sd4931

Contextual Info: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower

FERRITE TOROIDAL CORE DATA

Abstract: STAC2932B ferrite toroidal
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

STAC2933

Contextual Info: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package