PARALLEL E2PROM Search Results

28c65b

Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive – 120/150ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.

lattice 1996

Contextual Info: Specifications ispLSI and pLSI 6192 ® ispLSI and pLSI 6192 High Density Programmable Logic with Dedicated Memory and Register/Counter Modules — 96 I/O Pins with Input Registers — Security Cell Prevents Unauthorized Design Copying Features • A FAMILY OF HIGHLY INTEGRATED, CELL-BASED,

IAGMF

Abstract: IDS500
Contextual Info: & I-Cube PS48 Data Sheet Features Description • SRAM-based, In-system Programmable • Non-Blocking Switch Matrix - User Configurable D atapath W idth of 4, 8, or 16 bits - Identical and Predictable Delays • 48 I/O Ports - Individually Program m able as Input,

Contextual Info: * 1-Cube PSX Family Data Sheet àÊL F eatures D e s c r ip t io n • SRAM -based, in-system programmable • Switch Matrix The PSX160, PSX128B and PSX96B are SRAM-based bus oriented switches with 160, 128 and 96 l/Os respectively. The devices are manufactured using a 0.6|jm CMOS process and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-3v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RC256VPF-G-JNERE2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-2v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: ST7L05, ST7L09 8-bit MCU for automotive with single voltage Flash memory, data EEPROM, ADC, timers, SPI Features • ■ ■ ■ ■ Memories – 1.5 Kbytes program memory: Single voltage extended Flash XFlash with read-out protection capability, In-Application Programming

LCC-40P-M02

Abstract: diode MARKING CODE A9
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MBM29LV017-90PTN

Abstract: say marking
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: ADS1 ADS1210 ADS1211 210 ADS 1211 ADS1 ADS1 211 ADS1 210 211 SBAS034B – JANUARY 1996 – REVISED SEPTEMBER 2005 24-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● DELTA-SIGMA A/D CONVERTER ● 23 BITS EFFECTIVE RESOLUTION AT 10Hz AND 20 BITS AT 1000Hz

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10140-3E F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL Be sure to refer to the "Check Sheet" for the latest cautions on development.

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10113-3E F2MC-16LX 16-BIT MICROCONTROLLER MB90420G/425G Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90420G/425G Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.