70NS Search Results

1N5614 JANTX

Contextual Info: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)

smd marking A8

Contextual Info: SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

UC62LV4096

Contextual Info: Low Power CMOS SRAM 256K X 16 UC62LV4096 -55/-70 Description Features: • Vcc operation voltage : 1.5 V~ 3.6V • Low power consumption : 35mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V

MX23L3213

Abstract: MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN
Contextual Info: MX23L3213 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4M x 8 byte mode - 2M x 16 (word mode) • Fast access time - Random access:70ns(max.) • Current - Operating:16mA - Standby:5uA • Supply voltage - 2.7V ~ 3.6V • Package - 48 pin TSOP (12mm x 20mm)

TSOP 86 Package

Abstract: tsop 38 MX23L3210 MX23L3210MC-10 MX23L3210MC-12 MX23L3210MC-15 MX23L3210RC-70 MX23L3210TC-10 MX23L3210TC-12 MX23L3210TC-15
Contextual Info: MX23L3210 32M-BIT 4M x 8 / 2M x 16 Mask ROM FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access:70ns (max.) for 3.0V~3.6V 90ns (max.) for 2.7V~3.6V • Current - Operating:40mA - Standby:15uA

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

jeida dram 88 pin

Abstract: STI324000C1
Contextual Info: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

smd transistor HB

Abstract: LP62S16128B-T
Contextual Info: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

Contextual Info: Single Rectifier - 1,800V / 2,500V 7.0mA - 10mA • 70ns ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Worki ng Reverse Voltage Average Recti fi ed C urrent Reverse C urrent @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 25°C 1 C ycle Surge C urrent

Contextual Info: DO-214 Style Rectifiers - 2,500V 0.35A - 0.5 A • 30ns - 70ns ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Io (Ir) (Vf) (Vrwm) 55°C(1) 100°C(2) 25°C 100°C 25°C

Contextual Info: DO-215 Style Rectifiers - 1,800V 0.5 A - 1.0 A • 30ns - 70ns ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C 25°C

sldb

Abstract: HP8160A HP-3577A TSH151 TSH150 TSH151IN HP54100A
Contextual Info: TECHNICAL NOTE  TSH150 AND TSH151 DEMOBOARD by G. AUGUSTONI INTRODUCTION TSH150 and TSH151 are very high speed voltage feedback operational amplifiers, using STMicroelectronics BiCMOS process. They feature a 200V/µs slew rate, 150MHz gain bandwidth product and 20ns to 70ns settling time to 0.1% 2V

MS6167-35PDC

Abstract: MS6167-45PDC MS6167-55PDC MS6167L-35PDC MS6167L-55PDC
Contextual Info: y?3 lì MOSEL 16K x y/ > 's - / JL O 1 CMOS STATIC RAM MS 6167 January 1987 FEATURES • High-speed— 35/45/55/70ns • Low Power dissipation 150mW Typ. Operating 100|iW (Typ.) Standby • Single 5V power supply • Fully static operation • Input and output directly TTL compatible

1A11

Abstract: M27C800 PDIP42
Contextual Info: M27C800 8 Mbit 1 Mb x8 or 512Kb x16 UV EPROM and O TP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 70ns BYTE-W IDE or WORD-WI DE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION - Active Current 70mA at 8MHz - Stand-by Current 100|jA

ln324

Abstract: AQ P03 HM-7680P HM-7681P UPD1
Contextual Info: H M - 7 6 8 0 P /8 1 P P O W E R D O W N IK x 8 P R O M • 70ns M A X IM U M A D D R ESS ACCESS T IM E • "T H R E E S T A T E ' OR OPEN C O LLE C TO R O UTP UTS A N D FO UR POWER DOW N INPU TS. • SIM PLE H IG H SPEED P R O G R A M M IN G PR O C ED URE - ONE P U LS E /B IT

Contextual Info: dt | ; HIGH-SPEED 16Kx 8 DUAL-PORT STATIC RAM IDT7006S/L In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: • • • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed access — M ilitary: 20/25/35/55/70ns max.)

Contextual Info: IB M 1 1 S 2 3 2 0 L N IB M 1 1 S 2 3 2 0 L L 2M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fc A C CAS Access Time 15ns 20ns Access Time From Address 30ns 35ns W Irc Cycle Time

Contextual Info: CMOS DUAL-PORT RAM 32K 4K x 8-BIT p r e l im in a r y LX>v ice Tech nolo*.1,y he FEATURES: DESCRIPTION: • High-speed access - Military: 45/55/70ns (max.) The ID77134 Is an extremely high-speed 4K x 8 dual-port static RAM designed to be used in systems where on-chip hardware port