PA 81C Search Results

GFP 740

Abstract: EoPDH HDB3 to LVDS E1 to ethernet converter circuit 10G BERT DS26514 DS3100GN DS34T101 DS34T104GN TDK78P7200
Contextual Info: Communications 8th Edition April 2009 Bridging two worlds ET HE R TD NET M O OV VE ER R P PA D H CK ET IC solutions optimize transportation of data between network infrastructures DH ER P V O T T R N E PA C K E E H T R E OVE TDM TDM H R-PD E V O N E T- - PA C K E T

half-bridge power supply

Abstract: SEM-800 Application Note U-97 balancing switching transformer winding spice TRANSFORMER simulation t1b diode 81CH1652-7 SEM-400 transformer winding datasheet
Contextual Info: November 2002 Application Note 7531 Implementing A Primary Side Peak-Current-Mode Half-Bridge Converter Alain Laprade Jon Gladish Fairchild Semiconductor Corp 125 Crestwood Rd Mountain Top, PA US 18707 Ian Edward Victor Reginato EMS Technologies 21025 Trans Canada Highway

upa81c

Abstract: PA81C MPA81C
Contextual Info: ¿¿PA81 C N P N X ^ ^ + - > 7 ^ x U «J > h u PA 81C|i, NPN ✓ '» 7 B »«*t«y }•1 > iSX f > L E D . «• ■ ■ ! C t L / i r - ' i > ►> 7 U - Î 7 > y K 7 ' f ^ < f f l CONNECTION DIAGRAM (Top V «w

81c80a

Abstract: SAE81C80-A
Contextual Info: SIEMENS CMOS Dual-Port RAM SAE 81C80 A C M O S 1C F eatures • P rocessor interface w ith address and da ta bus plus sig n a ls a l e , w r , RD • 8051-, 8 0 9 6-co m pa tib le tim ing • M em ory ca p a city 504 bytes • All fu n ction s fully sta tic excl. oscilla to r w atchdog

74AS280

Abstract: 54ALS280 500NT
Contextual Info: TE X A S IN ST R -CLOGICJ fil ~Q§Qf723 T E X A S De| 0^1753 IN S T R LOGIC 00420^ S |~ Df- Y S ~/7 81 Ç 4 2 8 9 6 SN54ALS280, SN54AS280, SN74ALS280, SN74AS280 9-BIT PARITY GENERATORS/CHECKERS D2661, DECEMBER 1982 - REVISED MAY 1986 SN 54A LS2 80, SN 5 4 A S2 8 0 . . . J PA C K A G E

LB1001

Abstract: BIC 105
Contextual Info: S G S-THOMSON-D7E D I 81C 19 27 0 o 7 ^ 2 3 ? □ □ 1 3 G cn T ' _ w m P R ELIM IN A R Y DATA AN AT&T PRODUCT VOLTAGE REGULATOR CIRCUIT FAMILY VOLTAGE REGULATOR • FIXED VALUES BETWEEN 2V & 24V • LESS THAN 1% CHANGE OVER COMBINED TEMPERATURE AND POWER

81C55-5

Abstract: 81C55-5JS 80C85AH
Contextual Info: O K I Semiconductor M SM 81C55-5 R S /G S /JS 2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER GENERAL DESCRIPTION The M SM 81C55-5 has a 2k-bit static RA M 256 bytes with parallel I / O ports and a timer. It uses silicon gate CM OS technology and consum es a standby current of 100 m icro am pere, m axim um ,

MSM81C55

Abstract: 81C55-5 80c85a2
Contextual Info: OKI semiconductor MSM81C55RS/GS/JS MSM81C55 - 5RS/GS/JS 2048 BIT CMOS STATIC RAM WITH I/O PORTS AND TIMER GENERAL DESCRIPTION The M SM 81C55/81C55-5 have 2 k bits o f static R AM 256 byte w ith parallel I/O ports and a tim er. It uses silicon gate CMOS technology and consumes a standby current o f 100 m icro ampere, m axim um , w hile the ch ip is not

80C85AH

Abstract: M80C88A-2 81C55-5 81c55-5rs
Contextual Info: E200014-27-X2 O K I Semiconductor Previous version: Aug. 1996 M SM 81C55-5RS/GS/JS 2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER GENERAL DESCRIPTION The M SM 81C55-5 has a 2k-bit static RA M 256 bytes with parallel I / O ports and a timer. It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum,

intel 8155

Abstract: HS1-81C55RH-8 8155 programmable peripheral interface 81C55 81c55 programmable peripheral interface HS-81C56RH 5962R9676601QXC 5962R9676601QYC 5962R9676601VXC 5962R9676601VYC
Contextual Info: HS-81C55RH, HS-81C56RH TM Data Sheet August 2000 File Number Radiation Hardened 256 x 8 CMOS RAM Features The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

81C55-5

Abstract: MSM81C55RS 80C85A 81C55 msm80c85 MSM81C55JS 80C85A-2 MSM80C85A-2 MSM81C55-5 C55G
Contextual Info: ~ lß 6 -0 2 .ö semiconductor MSM81C55RS/GS/JS MSM81C55-5RS/GS/JS 2048 BIT CMOS STATIC RAM WITH I/O PORTS AND TIMER GENERAL DESCRIPTION The M S M 81 C 5 5/81C 55 -5 have 2k b its o f static R A M 2 5 6 byte w ith parallel I/O po rts and a tim e r. It uses

81C55RS

Abstract: MSM81C55RS MSM81C55-5GS
Contextual Info: OKI semiconductor MSM81C55RS/GS/JS MSM81C55-5RS/GS/JS 2048 BIT CMOS STATIC RAM WITH I/O PORTS AND TIMER GENERAL DESCRIPTION The MSM 81C55/81C55-5 have 2k bits o f static R AM 256 byte w ith parallel I/O ports and a tim e r. I t uses silicon gate CMOS technology and consumes a standby current o f 100 m icro ampere, m axim um , w hile the chip is not

HS-81C55RH

Abstract: HS-81C56RH 5962R9XXXX01QRC 5962R9XXXX01QXC 5962R9XXXX01VRC 81C55RH 81C56RH HS-80C85RH intel 8155 pa 3029 b
Contextual Info: HS-81C55RH, HS-81C56RH Radiation Hardened 256 x 8 CMOS RAM March 1996 Features Description • Devices QML Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

intel 8155

Abstract: 8155 port 5962R9XXXX01QRC 5962R9XXXX01QXC 5962R9XXXX01VRC 81C55RH 81C56RH HS-80C85RH HS-81C55RH HS-81C56RH
Contextual Info: HS-81C55RH HS-81C56RH S E M I C O N D U C T O R Radiation Hardened 256 x 8 CMOS RAM March 1996 Features Description • Devices QML Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Harris radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

nec 7915

Abstract: 7915 pin configuration transistor 7915 pA 81c 7915 CT 7915 RS 7915 pin configuration 7915 IC 7915 features of ic 4081
Contextual Info: N E C ELECTRONICS INC 01 6427525 N E C ]>Ë| b4E752S G01Glib 1 |~~ ELECTRONI CS INC 81C i n i i 6 T -79-15 jW U Y * rw H j W N E C Electronics Inc. Description ¿/PC4081 j - f e t in p u t o p e r a tio n a l a m p lifie r Pin Configuration The/iiPC4081 is a single operational amplifier with a com­

81C55

Abstract: s125
Contextual Info: H A R R HS-81C55RH HS-81C56RH I S S E M I C O N D U C T O R Radiation Hardened 256 X 8 CMOS RAM December 1992 Pinouts Features 40 PIN CERAMIC DIP CASE OUTLINE D5, CONFIGURATION 3 • Radiation Hardened EPI-CMOS - Parametrlcs Guaranteed 1 x 10s RAD SI - Transient Upset > 1 x 10 RAD(SI)/s

6bw 95

Abstract: TR 6BW 01 IC 7915
Contextual Info: V N E C ELECTRONI CS 6427525 N E C I NC 01 ELECTRONICS D E I bM 27 S 2S 00100=13 81C INC NEC NEC Electronics Inc. D e sc rip tio n The //PC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the juPC356 Is

M5M81C55P2

Abstract: m5m81c55p-2 m5m81c55 m5m81 m5m81c55p M5M81c CT Terminal Consist of RT 5-T 81C55FP2
Contextual Info: M ITSU B IS H I LSI« M 5M 81C 55P -2/FP -2/ J-2 CMOS 2048-BIT STATIC RAM WITH I/O PORTS AND TIM ER DESCRIPTION The M 5M 81C 55P -2 is the 2 K -b it RAM 256-word by 8-bit PIN CONFIGURATION (TOP VIEW) fa b ric a te d by the silicon gate C M O S technology. This LSI

Contextual Info: m W HS-81C55RH HS-81C56RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 8 CMOS RAM D e c e m b e r 1992 Features Pinouts 40 PIN CERAMIC DIP CASE OUTLINE D5, CONFIGURATION 3 TOP VIEW • R a d ia tio n H a rd e n e d E P I-C M O S - P a r a m e lric s G u a ra n te e d 1 x 1 0 s R A D S i

sem ad 222m

Abstract: ic 8155 timer sem aa 222m T81C
Contextual Info: HS-81C55RH HS-81C56RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 8 CMOS RAM March 1996 Features Description • Devices QML Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Harris radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

7915 CT

Abstract: nec 7915 IC 7915 7915 I8N25 7915 UC
Contextual Info: N E C ELECTRONICS INC fll 6427525 N E C D e J b427SaS 0010115 1 ELECTRONICS INC 81C 10195 D T—79—15 NEC Electronics Inc. D e sc r ip tio n /JPC4084 Q U A D J-FET IN PUT o p e r a t io n a l a m p lifie r P in C o n fig u r a tio n T h e //P C 4 0 8 4 o ffe rs fo u r o p e ra tio n a l am p lifie rs with

81C55

Abstract: intel 8155 80C85 8155 intel microprocessor programming 81C55RH 81C56RH HS-80C85RH HS-81C55RH HS-81C56RH 11KA2
Contextual Info: 5ÖE J> H A RR IS S E M I C O N D SE CT OR HARRIS S E M I C O N D U C T O R 4 3 0 S 27 1 0 0 4 5 5 3 t 217 « H A S HS-81C55RH HS-81C56RH Radiation Hardened 256 x 8 CMOS RAM Decem ber 1992 Features “ * 'P 4 U Pinouts '2 3 r l2 - . 4 0 P IN C E R A M IC D IP

SIEMENS 80c48

Abstract: 8085 sab 81C54 SAB 81 C 51 P SIEMENS S10435 siemens 8085 a 8085 memory organization B047 siemens 8085 80C48
Contextual Info: S IE M E N S 512 x 8-Bit Static CMOS RAM SAB 81C 54 Prelim inary D ata C M O S 1C Features • 512 x 8 - b it o rg a n iz a tio n • M u ltip le x e d a d d re s s and d a ta bus • T ris ta te a d d r e s s /d a ta lin e s • O n -c h ip a d d re s s re g is te r

silicon npn planar rf transistor sot 143

Abstract: transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
Contextual Info: TELEFUNKEN ELECTRONIC m i [ F y » i K l electronic 81C » • S^SDDSb 0005314 M m A L G G 7 > S /~ /S " p e e RO B p5 bZ Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range Features: • Small feedback capacitance