P1499 Search Results
P1499 Price and Stock
LEDIL CP14994_FLORENTINA-HLD-M- Bag (Alt: CP14994_FLORENTINA-HLD-M) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CP14994_FLORENTINA-HLD-M | Bag | 10 Weeks | 32 |
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CP14994_FLORENTINA-HLD-M | 7 Weeks | 32 |
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Monolithic Power Systems MP1499GD-PMPSMP1499GD-P - Tape and Reel (Alt: MP1499GD-P) |
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MP1499GD-P | Tape & Reel | 36 Weeks | 500 |
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MP1499GD-P | 42 Weeks | 500 |
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LEDIL CP14996_FLORENTINA-HLD-DAssembly - Bag (Alt: CP14996_FLORENTINA-HLD-D) |
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CP14996_FLORENTINA-HLD-D | Bag | 10 Weeks | 32 |
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CP14996_FLORENTINA-HLD-D | 7 Weeks | 32 |
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CP14996_FLORENTINA-HLD-D | 7 Weeks | 32 |
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LEDIL CP14993_FLORENTINA-HLD-SS- Bag (Alt: CP14993_FLORENTINA-HLD-SS) |
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CP14993_FLORENTINA-HLD-SS | Bag | 10 Weeks | 32 |
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CP14993_FLORENTINA-HLD-SS | 7 Weeks | 32 |
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CP14993_FLORENTINA-HLD-SS | 7 Weeks | 32 |
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LEDIL FP14997_FLORENTINA-HLD-W- Bag (Alt: FP14997_FLORENTINA-HLD-W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FP14997_FLORENTINA-HLD-W | Bag | 10 Weeks | 32 |
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FP14997_FLORENTINA-HLD-W | 7 Weeks | 32 |
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FP14997_FLORENTINA-HLD-W | 7 Weeks | 32 |
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P1499 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NES2427P-60Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power CW with high |
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nes2427p-60 | |
NES1823P-50Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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nes1823p-50 | |
transistor NEC D 586
Abstract: C10535E NE722S01 NE722S01-T1 NE722S01-T1B
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transistor nec d 586c10535ene722s01ne722s01-t1+1 | |
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Contextual Info: DATA SHEET GaAs MES FET NE722S01 C to X BAND LOW NOISE, HIGH-GAIN AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • Power gain: GS = 6.0 dB TYP. @ f = 12 GHz • Output power: PO 1 dB = 15 dBm TYP. @ f = 12 GHz • Noise figure, associated gain: NF = 0.9 dB TYP., Ga = 12 dB TYP. @ f = 4 GHz |
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ne722s01ne722s01-t1ne722s01-t1b | |
2SC5600
Abstract: transistor 2SC5600 P14999EJ1V0DS00
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2sc56002sc5600-t1transistor 2sc5600p14999ej1v0ds00 | |
2SC5600
Abstract: P14999EJ1V0DS00
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2sc5600p14999ej1v0ds00 | |
NES1823P-50
Abstract: gaas mes nec 5703 IDA45
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nes1823p-50imt2000gaas mesnec 5703+1 | |
fet B20 p03
Abstract: m7101 M1535 a1 MAXIM 1535 CE KB3886 VT6202 amtek HK-AE-15A1R0 p1488 VIA VT6202
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max1632tm5800vt6202ieee1394+15 |