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    LEDIL CP14994_FLORENTINA-HLD-M

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    Avnet Americas CP14994_FLORENTINA-HLD-M Bag 10 Weeks 32
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    Monolithic Power Systems MP1499GD-P

    MPSMP1499GD-P - Tape and Reel (Alt: MP1499GD-P)
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    Avnet Americas MP1499GD-P Tape & Reel 36 Weeks 500
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    Avnet Silica MP1499GD-P 42 Weeks 500
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    LEDIL CP14996_FLORENTINA-HLD-D

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    LEDIL CP14993_FLORENTINA-HLD-SS

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    LEDIL FP14997_FLORENTINA-HLD-W

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    P1499 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NES2427P-60

    Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power CW with high


    Original
    nes2427p-60 PDF

    NES1823P-50

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    nes1823p-50 PDF

    transistor NEC D 586

    Abstract: C10535E NE722S01 NE722S01-T1 NE722S01-T1B
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    transistor nec d 586c10535ene722s01ne722s01-t1+1ne722s01-t1b PDF

    Contextual Info: DATA SHEET GaAs MES FET NE722S01 C to X BAND LOW NOISE, HIGH-GAIN AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • Power gain: GS = 6.0 dB TYP. @ f = 12 GHz • Output power: PO 1 dB = 15 dBm TYP. @ f = 12 GHz • Noise figure, associated gain: NF = 0.9 dB TYP., Ga = 12 dB TYP. @ f = 4 GHz


    Original
    ne722s01ne722s01-t1ne722s01-t1b PDF

    2SC5600

    Abstract: transistor 2SC5600 P14999EJ1V0DS00
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold t = 0.59 mm


    Original
    2sc56002sc5600-t1transistor 2sc5600p14999ej1v0ds00 PDF

    2SC5600

    Abstract: P14999EJ1V0DS00
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    2sc5600p14999ej1v0ds00 PDF

    NES1823P-50

    Abstract: gaas mes nec 5703 IDA45
    Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power CW with high


    Original
    nes1823p-50imt2000gaas mesnec 5703+1ida45 PDF

    fet B20 p03

    Abstract: m7101 M1535 a1 MAXIM 1535 CE KB3886 VT6202 amtek HK-AE-15A1R0 p1488 VIA VT6202
    Contextual Info: 5 4 3 2 1 Charge & Selector PAGE 28 PWRGD & ENABLEVIO Circuit D ROM & CMS PAGE 34 System Power 5V & 3V MAX1632 TABLET PC - T01 BLOCK DIAGRAM PAGE 8 Vcore Power Maxim 1718 PAGE 30 DEBUG TDM Port PAGE 33 VGA & DDR Power D PAGE 8 DDR PAGE 31 DDR on Board CRUSOE


    Original
    max1632tm5800vt6202ieee1394+15vt6306cb14108100bm1535m5823r546r547fet b20 p03m7101m1535 a1maxim 1535 cekb3886amtekhk-ae-15a1r0p1488via vt6202 PDF