P1169 Search Results

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance Irated 2

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1169 Series Low profile and suitable for compact surface area mounting Large permissible DC current Low DC resistance Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C Part Number P1169.501T

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1169 Series ! W E N Low profile and suitable for compact surface area mounting Large permissible DC current Low DC resistance Electrical Specifications @ 25°C — Operating Temperature -25°C to +85°C Part Number

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance Irated 2

P1168

Abstract: P1168 501 NL
Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

124nl

Abstract: P1168 P1168.223NL 562NL transistor 124nl P1168.562NL P1169 p1168.103nl PF0553 P1168153NL
Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168NL/P1169NL Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

170 E 2094

Abstract: Ka 2535
Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1169 Series ! W E N Low profile and suitable for compact surface area mounting Large permissable DC current Low DC resistance Electrical Specifications @ 25°C — Operating Temperature -25°C to +85°C Part Number

4728

Abstract: P1168 P1168.124
Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168/P1169 Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

124NL

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1168NL/P1169NL Series Height: 4.5mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 14A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1169 Series ! W E N Low profile and suitable for compact surface area mounting Large permissible DC current Low DC resistance Electrical Specifications @ 25°C — Operating Temperature -25°C to +85°C Part Number

2SC3604

Abstract: pt 240 2SC3810
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

p531

Abstract: p549 P544 P1173.223T p547 P8202 PE-51718 P532 P1172.103T P543
Contextual Info: POWER PRODUCTS Pulse offers a wide variety of Power transformers and inductors for use in switching power supplies and DC/DC converter applications. Components range from low cost simple inductors to current sense and common mode inductors, shielded drum core inductors, gate drive transformer solutions

2SC3604

Abstract: 2SC3810
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

spw 080

Abstract: LEM3225 CL-2M2012-900JT TKS 0603 FBM3216HS800-T ACB2012M-150-T LAL04TB 494LYF FBM2125HS420-T m5258
Contextual Info: CT Technologies - Cross Reference Competitor Part CTC Part 0402R CT0402CSF 0402CS-P CT0402CSF 0402CS L CT0402CSF 0402CS CT0402CSF 0402 CT0402CSF 555-0402 CT0402CSF PE-0402CD CT0402CSF 0402AS CT0402CSF ELJNK CT0402CSF GLZG CT0402CSF KQ0402 CT0402CSF KQT0402L

2SC2586

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

p14115

Abstract: P14115-ND P7510 P6847-ND P14103-ND P1017 EET-HC2G331JA P6841-ND P14117-ND P1016
Contextual Info: TS Series W.V. DC 80 100 200 400 Max. 105°C rms ESR Ripple Dim. Cap. @20°C Current (mm) (µF) (120Hz)Ω (120Hz) A D L 2700 0.074 2.40 35 30 3300 0.065 2.60 25 50 3300 0.065 2.60 35 30 4700 0.049 3.30 30 50 4700 0.049 3.30 35 40 5600 0.050 3.70 35 45

Contextual Info: NCP3121 Dual 3.0 A, Step-Down DC/DC Switching Regulator The NCP3121 is a dual buck converter designed for low voltage applications requiring high efficiency. This device is capable of producing an output voltage as low as 0.8 V. The NCP3121 provides dual 3.0 A switching regulators with an adjustable 200 kHz − 750 kHz

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

2SC3286

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3286-M NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters * High gain and high power output at 230 MHz 2 Pout = 140 W @ Vcc = 28 V, Pin = 10 W, class AB