P080R Search Results

westcode ct

Abstract: westcode n 600 ch 18 WESTCODE WESTCODE SW 1qra ert 3280 P042RH westcode n 600 ch 14
Contextual Info: SEMICONDUCTORS Fast T urn-Off Thyristors Shortform Design Guide Issue 7 Westcode “P ” series of fast-switching thyristors have regenerative gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values com bined with the low forward switching

0 280 130 023

Abstract: p202ph 0 280 130 123 34A-100 P036RH P300KH p027r
Contextual Info: Fast T urn-off Thyristors ~ Stud & flat base types Type VDRM Range Turn-off Time Tq at 200V/|js Note 3 (Tables 3,4) ^RRM I tav It I t (RMS) I t SM(1) I t SM(2) 10ms 10ms "^"cASE 85°C 25°C 25°C Vr= s 60% VR^10V @ @ I2t (2) 10ms ^ rrm P027RH P036RH P042RH

Contextual Info: Westcode “P ” series of fast-switching thyristors have regenerative gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values combined with the low forward switching losses make the “P” series particularly attractive in

westcode n 600 ch 18

Abstract: WESTCODE SW chn 840 P105CH p205ch Chn 835 Westcode Semiconductors p214ch WESTCODE 147 11 33 westcode n 600 ch 14
Contextual Info: s Fast Turn-Off Thyristors Shortform Design Guide Issue 6 Westcode “P” series of fast-switching thyristors have regenerative gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values combined with the low forward switching

639X

Abstract: P105PH 101a1 P036RH 0 280 130 023
Contextual Info: Fast T u r n - o f f T h y r is t o r s Type ^DHM ^RRM Range Turn-off Stud ¿V flat baso types ^TAV ^ T R M S It Time Tq "^"cASE @ @ at 200V/MS 85°C 25°C 10ms ItSM(2) F t (2) Qra di/dt Iqrm 10ms 10ms 50% Non-Rep/ Irrm Chord Rep 25°C V R=s 60% VR« 1 0 V

P036RH

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Westcode Semiconductors p214ch

Abstract: P270CH PL05 GDDE244 P036RH P027RH P215CH P036R t 63 n 1200 P105CH
Contextual Info: UESTCODE SEMICONDUCTORS 3TE I> Westcode “P” series of fast-switching thyristors have regenerative gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values combined with the low forward switching losses make the “P” series particularly attractive in