P032P Search Results

VND1NV04TR-E

Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation

STGD3NB60S

Abstract: STGP3NB60S SMD H2 T4
Contextual Info: STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE STGP3NB60S STGD3NB60S • ■ ■ ■ VCES VCE sat IC 600 V 600 V < 1.5 V < 1.5 V 3A 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT

D5NM60

Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw

STD2NC70Z

Abstract: STD2NC70Z-1
Contextual Info: STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STD2NC70Z STD2NC70Z-1 • ■ ■ ■ ■ VDSS RDS on ID 700V 700V < 4.7Ω < 4.7Ω 2.3 A 2.3 A TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY

p20n20

Abstract: F20N20 D20N20 STD20N20T4 STD20N20 STF20N20 STP20N20 STripFET P20-N F20N
Contextual Info: STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET DATA BRIEF Figure 1: Package Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 • ■ ■ ■ VDSS RDS on Id PW 200 V 200 V 200 V

STD10NF06L

Abstract: STD10NF06
Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L • ■ VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 DESCRIPTION

OMNIFET

Abstract: VND3NV04 VND3NV04-1 VNN3NV04 VNS3NV04 F1621
Contextual Info: VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN3NV04 VNS3NV04 VND3NV04 RDS on Ilim Vclamp 120 mΩ 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 VND3NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION

STMicroelectronics DPAK Marking CODE

Abstract: BULD1101E BULD1101ET4
Contextual Info: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

STGD3NB60HD

Contextual Info: STGD3NB60HD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STGD3NB60HD • ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 3A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME

TO220-2-1

Abstract: 20KHZ STGD3NB60M STGD3NB60MT4 STGP3NB60M
Contextual Info: STGP3NB60M - STGD3NB60M N-CHANNEL 3A - 600V TO-220 / DPAK PowerMESH IGBT TYPE STGP3NB60M STGD3NB60M • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V < 1.9 V < 1.9 V 3A 3A 3 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT

P4NK80Zfp

Abstract: p4nk80z d4nk80z p4nk80 d4nk8 STP4NK80ZFP STD4NK80Z-1 STD4NK80Z STD4NK80ZT4 STP4NK80Z
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < 3.5 < 3.5

1313L1

Abstract: STD17N25 STF17N25
Contextual Info: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω

Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •

Contextual Info: STGD3NB60KD N-CHANNEL 6A - 600V - DPAK SHORT CIRCUIT PROOF PowerMESH IGBT TYPE VCES VCE sat (Max) @25°C IC @100°C STGD3NB60KD 600 V < 2.8 V 6A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW GATE CHARGE OFF LOSSES INCLUDE TAIL CURRENT

STD70NH02LT4

Contextual Info: STD70NH02L N-CHANNEL 24V - 0.0062Ω - 70A - DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008Ω 70 A TYPICAL RDS(on) = 0.0062Ω @ 10 V TYPICAL RDS(on) = 0.008Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

TO-252 MOSFET

Abstract: std16ne06l
Contextual Info: STD16NE06L N-CHANNEL 60V - 0.06Ω - 16A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L • ■ ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.07Ω 16 A TYPICAL RDS(on) = 0.06Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE

STD10NF06L

Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L • ■ VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 DESCRIPTION

STD35NF06L

Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

STD2NC50

Abstract: STD2NC50-1
Contextual Info: STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK PowerMesh II MOSFET TYPE STD2NC50 STD2NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V < 4Ω < 4Ω 2.2 A 2.2 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STD5NM50 N-CHANNEL 500V - 0.7Ω - 5A DPAK MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM50 500V <0.8Ω 5A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

sony CXK581100TM

Abstract: TSOP 56 Package Sony CMOS L01r
Contextual Info: CXK58110OTM/YM SONY. - 1 0 lí l/ 1 2 L U 1 5 L L Advance Information 131072-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 1 1 0 0 T M /Y M is a 1M b its , 131072 w o rd s by 8 bits, CMOS s ta tic RAM. It is suitable f o r portable and ba tte ry back-up system s w hich

7382

Abstract: VNS3NV0413TR VND3NV04 VND3NV04-1 VND3NV0413TR VND3NV04-1-E VND3NV04-E VNN3NV04 VNN3NV0413TR VNS3NV04
Contextual Info: VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 Ilim Vclamp 2 1 120 mΩ 3.5 A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

D1802

Abstract: transistor d1802 TRANSISTOR T4 ST d1802 transistor JESD97 STD1802T4-A transistor d1802 dpak
Contextual Info: STD1802T4-A Low voltage fast-switching NPN power transistor Features • This device is qualified for automotive application ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power

D100N03L

Abstract: JESD97 STD100N03L STD100N03L-1 STD100N03LT4
Contextual Info: STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET MOSFET General features Package Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A 1 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W RDS(on) ID Pw 3 3 • 100%AVALANCHE TESTED