P011G Search Results

Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

VNK5N07FM

Abstract: VNP5N07FI VND5N07 VND5N07-1 SGS-Thomson mosfet ipak
Contextual Info: VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V R DS on 0.2 0.2 0.2 0.2 Ω Ω Ω Ω I lim 5 5 5 5 A A A A 3 • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

STP4NA40FI

Abstract: STP4NA40
Contextual Info: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <2Ω <2Ω 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP6N60FI

Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

STP19N06L

Abstract: STP19N06LFI
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

VNB14N04

Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Contextual Info: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14

STP3NA100

Abstract: STP3NA100FI
Contextual Info: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STP3NA100 STP3NA100FI 1000 V 1000 V <5 Ω <5Ω 3.5 A 2A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

BUZ80

Abstract: BUZ80FI transistor BUZ80
Contextual Info: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP7NA60

Abstract: STP7NA60FI
Contextual Info: STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA60 STP7NA60FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V <1Ω <1Ω 7.2 A 4.4 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP7NA40

Abstract: STP7NA40FI
Contextual Info: STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <1Ω <1Ω 6.5 A 4.1 A TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP4NA60

Abstract: STP4NA60FI
Contextual Info: STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.2 Ω < 2.2 Ω 4.3 A 2.7 A TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP5N30

Abstract: STP5N30FI
Contextual Info: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

VNB10N07

Abstract: VNK10N07FM VNP10N07FI VNV10N07
Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

STP2NA50

Abstract: STP2NA50FI P011C
Contextual Info: STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP2NA50 STP2NA50FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V <4Ω <4Ω 2.8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

stp36n06v

Abstract: STP36N06 STP36N06FI 144AA
Contextual Info: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BUL57PI

Abstract: BUL57 schema
Contextual Info: BUL57 BUL57PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

IRF740

Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP5N30L

Abstract: STP5N30LFI
Contextual Info: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

IRF730FI

Abstract: IRF730 OC470 irf730f
Contextual Info: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

L78M00

Abstract: L78M05CV L78M06CV L78M08CV L78M09CV L78M10CV L78M12CV L78M15CV L78M18CV
Contextual Info: L78M00 SERIES  POSITIVE VOLTAGE REGULATORS • ■ ■ ■ ■ OUTPUT CURRENT TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive

5252 F 0921

Abstract: LF00 LF12AB LF12C LF15AB LF15C LF25AB LF25C LF27C LF60
Contextual Info: LF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ VERY LOW DROPOUT VOLTAGE 0.45V VERY LOW QUIESCENT CURRENT (TYP. 50 µA IN OFF MODE, 500µA IN ON MODE) OUTPUT CURRENT UP TO 500 mA LOGIC-CONTROLLED ELECTRONIC

VNB20N07

Abstract: VNP20N07FI VNV20N07
Contextual Info: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

Contextual Info: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN