P-TYPE MOSFET Search Results

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

FET pair n-channel p-channel

Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.

KTA 3-25

Abstract: SSM6E01TU SSM6E
Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low

SOP8 PNP Transistor Package

Abstract: transistor digital 47k 22k 100ma PNP NPN TUMT6 TSMT6 dual audio circuit diagram TB 2500 TO-220FN T100 SMT6 T108 T108
Contextual Info: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation <Single-Chip Type> <Dual-Chip Type> <JEITA-Registered Type> Example : Example : Example : R T Q 0 3 5 P 0 2 [ ] S P 8 M 3 2 S K 3 1 9 No. registered by JEITA ROHM ID Unit: 100mA

Contextual Info: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20

Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY Please click here to visit our online spice models database. Features NEW P PROD R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2N7002 MARKING

Abstract: codes marking 2N7002 a80 marking code 2N7002 MMBT4403
Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW P PROD R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant Note 1 "Green" Device (Note 3 and 4)

MIP006

Contextual Info: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage

FET pair n-channel p-channel

Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to

Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

capacitor, 2200 microfarad 25v

Abstract: capacitor 470 microfarad 25v TPA3123D2 12v 25w power amplifier MD3123 25w audio 2200 microfarad 16v capacitor 12v 40W stereo amplifier 40w bass amplifier using a 12v dc supply class D audio amplifier
Contextual Info: MD3123 25W Stereo Class D Audio Amplifier General Description Features P O at 10% THD+N, VDD = 24V RL = 8 Ω 10W type RL = 4 Ω 20W(type) P O at 1% THD+N, VDD = 24V RL = 8 Ω 8W(type) RL = 4 Ω 16W(type) 10-30V operation Unique Modulation Scheme High Efficiency up to 90%

CPH5802

Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)

A1123

Contextual Info: EFC4618R-P Ordering number : ENA1123 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R-P General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications

ENN8206

Abstract: CPH5810 MCH3312
Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)

86886

Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Contextual Info: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)

Contextual Info: FW707 Ordering number : ENA1805 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FW707 General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package

A10302

Abstract: W705 A10304 FW705
Contextual Info: FW705 Ordering number : ENA1030 SANYO Semiconductors DATA SHEET FW705 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.

ENA1805

Contextual Info: FW707 Ordering number : ENA1805 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FW707 General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package

7447

Abstract: CPH5818 MCH3339 SBS007M
Contextual Info: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171

A1123

Contextual Info: EFC4618R-P Ordering number : ENA1123A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R-P General-Purpose Switching Device Applications Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type

Contextual Info: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained

Contextual Info: FW705 FW705 Ordering number : ENA1030 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package. High-density mounting. Specifications