P-TYPE MOSFET Search Results

uPA67

Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
Contextual Info: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4

SSM6E01TU

Abstract: HIGH POWER MOSFET TOSHIBA
Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

FET pair n-channel p-channel

Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

KTA 3-25

Abstract: SSM6E01TU SSM6E
Contextual Info: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low

SOP8 PNP Transistor Package

Abstract: transistor digital 47k 22k 100ma PNP NPN TUMT6 TSMT6 dual audio circuit diagram TB 2500 TO-220FN T100 SMT6 T108 T108
Contextual Info: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation <Single-Chip Type> <Dual-Chip Type> <JEITA-Registered Type> Example : Example : Example : R T Q 0 3 5 P 0 2 [ ] S P 8 M 3 2 S K 3 1 9 No. registered by JEITA ROHM ID Unit: 100mA

Contextual Info: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20

Contextual Info: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20

UMT3F

Abstract: vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110
Contextual Info: Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) Type of MOSFET 1.2/1.5/1.8 2.5 4 − − C Low IGSS Type

Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY Please click here to visit our online spice models database. Features NEW P PROD R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2N7002 MARKING

Abstract: codes marking 2N7002 a80 marking code 2N7002 MMBT4403
Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW P PROD R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant Note 1 "Green" Device (Note 3 and 4)

Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW PROD P R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant Note 1 "Green" Device (Note 3 and 4)

vmn3 package

Abstract: rohm suffix "N" vmn3 rohm Part No. Explanation UMT3F T100 T106 TUMT6 T110 T116
Contextual Info: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 Polarity ID Unit: 100mA 035＝3500mA（3.5A） N Nch P Pch Drive Voltage Drive Voltage （V） 1.2/1.5/1.8 2.5 4 ― ― C Low IGSS Type

70611

Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a

MIP006

Contextual Info: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage

MCH3314

Abstract: SCH2805
Contextual Info: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

FET pair n-channel p-channel

Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to