P-CHANNEL RF AMPLIFIER Search Results

P10568EJ2V0DS00

Abstract: NEC 939 u79 transistor u79 335 NEC 2134 transistor NEC m 2134 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL G a As DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: • • High G p s : 20 dB TYP. Low NF:

Contextual Info: MOTOROLA Order this document by MHW7292/D SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel 750 MHz CATV Line Extender Amplifier • Specified for 110-C hannel Performance • Broadband Power Gain — @ f = 4 0 - 7 5 0 M H z G p = 29 dB (Typ) • Broadband Noise Figure

TH 2267

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • PACKAGE DIMENSIONS The C haracteristic of C ross-M odulation is good. Unit: mm CM = 92 dB /zTY P. @ f = 200 MHz, Gr = -3 0 dB

J1103

Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

DV28120T

Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Contextual Info: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E

STB4395

Abstract: STB4395A TQFP64 of multilayer pcb RF Transceiver 800mhz
Contextual Info: STB4395 CT2 RECEIVER/TRANSMITTER . . . . . . . ADVANCE DATA FULLY INTEGRATED DOUBLE SUPERHETERODYNE RECEIVER OPERATION FROM 800MHz TO 1000MHz RECEIVER OUTPUT AS BITSTREAM FULLY INTEGRATED TRANSMITTER TRANSMITTER INPUT I/Q/REFIQ OR I/I, Q/Q INTEGRATED POWER AMPLIFIER

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

ATC100B9R1CT500XT

Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

439 motorola

Abstract: 5Bp power mhw5342a motorola 714
Contextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW5342A

Contextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

CRCW08051000FKTA

Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC

1Wto10W

Abstract: RF1623
Contextual Info: TDA7563 MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES • ■ ■ DMOS POWER OUTPUT NON-SWITCHING HI-EFFICIENCY HIGH OUTPUT POWER CAPABILITY 4x28W/ 4Ω @ 14.4V, 1KHZ, 10% THD, 4x40W EIAJ MAX. OUTPUT POWER 4x72W/2Ω MULTIPOWER BCD TECHNOLOGY

1222 DC

Contextual Info: 'IjV S it I MHW1171 MHW1172 MHW1221MHW1222 r ffr k f - i M OTOROLA The IlF Line CATV INPUT/OUTPUT TRUNK AMPLIFIERS LOW DISTORTION WIDEBAND AMPLIFIER MODULE . . . designed sp e c ific a lly fo r broadb and a p p lic a tio n s re q u irin g lo w d is to r tio n

CTB128

Abstract: MHW8182A XMD128
Contextual Info: MOTOROLA Order this document by MHW8182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Amplifier MHW8182A • Specified for 77 and 128–Channel Performance • Broadband Power Gain  @ f = 860 MHz Gp = 18.9 dB Typ 18 dB GAIN 860 MHz

MHW1244N

Abstract: MHW1244
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHW1244N Rev. 4, 5/2006 CATV Amplifier Module Features • Specified for 12 - , 22 - and 26 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature

TDA7561

Abstract: 4x60W FLEXIWATT25 equivalent FLEXIWATT25 Audio Amplifier diagram car mosfet audio amplifier diagram TDA756
Contextual Info: TDA7561 MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DMOS POWER OUTPUT HIGH OUTPUT POWER CAPABILITY 4x25W/ 4W @ 14.4V, 1KHZ, 10% THD, 4x35W EIAJ MAX. OUTPUT POWER 4x60W/2W FULL I2C BUS DRIVING: – ST-BY

MHW1303LA

Abstract: MHW1303LAN
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHW1303LAN Rev. 4, 5/2006 CATV Amplifier Module Features • Specified for 6 - and 10 - Channel Loading • Excellent Distortion Performance • Low Power Consumption • Capable of Handling Multiple Channels in the Return Path with Good

varactor diode fm MODULATOR

Abstract: schematic diagram power amplifier free pll fsk MODULATOR uhf range fm modulator RADIO fm RECEIVER IC UHF uhf modulator CMX017 CMX017D6 UHf filter amplifier assembly RG402
Contextual Info: CMX017 UHF FM/FSK Transmitter D/017/3 April 1999 Advance Information Features Applications • Direct FM/FSK UHF Modulator • General Radio Link 860-965 MHz • Adjustable Modulator Output Power • General 915MHz ISM Band USA • Integrated Power Amplifier with Output

CTB128

Abstract: MHW8272 XMD128
Contextual Info: MOTOROLA Order this document by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8272 • Specified for 128–Channel Performance • Broadband Power Gain  @ f = 40 – 860 MHz Gp = 27 dB (Typ) 27 dB GAIN

AWT6106

Contextual Info: AWT6106M5 PCS CDMA 3.5V/29 dBm Linear Power Amplifier Module Advanced Product Information Rev. 1 FEATURES • • • • • • • • • InGaP HBT Technology High Efficiency 40% Typ Low Leakage Current ( <25µA) SMT Module Package Small Foot Print (6mm X 6mm)

AH215-S8

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 l475
Contextual Info: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match