P-CHANNEL RF AMPLIFIER Search Results

ARF301

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

ARF301

Abstract: "RF MOSFET" 300W ARF300
Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

4948

Abstract: ARF300 ARF301 50VDSS
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

4948

Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

136y

Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up

MRF161

Abstract: J141 mosfet fet j141
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r

RF MOSFETs

Abstract: "RF MOSFETs"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz

ferroxcube toroids

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

749 MOSFET TRANSISTOR motorola

Abstract: RF154 dss125
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.

MRF162

Abstract: motorola TE 901 Triode rs 733 P011t
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­

n-channel enhancement mode vmos power fet

Abstract: DV1201K
Contextual Info: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications

J141 mosfet

Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .

15J02

Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen­

J300

Abstract: J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild
Contextual Info: Product Folder - Fairchild P/N J300 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links J300 Request samples

P10568EJ2V0DS00

Abstract: NEC 939 u79 transistor u79 335 NEC 2134 transistor NEC m 2134 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL G a As DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: • • High G p s : 20 dB TYP. Low NF:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line G allium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical ap p lic atio n s are ce llu la r radio s and personal com m unication

ARF448A/B

Contextual Info: 0257^0^ üüGEDSb TTT A d v a n ced P o w er Tech n o lo g y ARF448A ARF448B Common Source RF POWER MOSFETs 150V N-CHANNEL ENHANCEMENT MODE 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Nippon capacitors

Contextual Info: Order this data sheet by MRF5003/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF5003 RF Power Field Effect Ttaransistor M otorola P referre d D evice N-Channel Enhancem ent-Mode The MRF5003 is designed for broadband commercial and industrial applications at

3SK103

Abstract: 3SK138
Contextual Info: HITACHI 3SK138 SILICON N-CHANNEL DUAL GATE MOS FET UHF TV TUNER RF AMPLIFIER 1 Sv.Xt 1 Cjk : y Cm ? 4 Pimr.'ifciou ntmm d p (M PAK‘4) ASSO LU TE MAXIMUM RATINGS (Ta=25aC; Item- Symbol MAXIMUM CHANNEL PO W ER DISSIPATION CURVE 3SKIJS Unit Diain to source voilage