P-CHANNEL RF AMPLIFIER Search Results

ARF301

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

ARF301

Abstract: "RF MOSFET" 300W ARF300
Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

4948

Abstract: ARF300 ARF301 50VDSS
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

4948

Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

n-channel enhancement mode vmos power fet

Abstract: DV1201K
Contextual Info: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .

J300

Abstract: J300_D26Z fairchild marking codes fairchild MARKING MY J300D marking code fairchild
Contextual Info: Product Folder - Fairchild P/N J300 - N-Channel RF Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links J300 Request samples

P10568EJ2V0DS00

Abstract: NEC 939 u79 transistor u79 335 NEC 2134 transistor NEC m 2134 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL G a As DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: • • High G p s : 20 dB TYP. Low NF:

3SK103

Abstract: 3SK138
Contextual Info: HITACHI 3SK138 SILICON N-CHANNEL DUAL GATE MOS FET UHF TV TUNER RF AMPLIFIER 1 Sv.Xt 1 Cjk : y Cm ? 4 Pimr.'ifciou ntmm d p (M PAK‘4) ASSO LU TE MAXIMUM RATINGS (Ta=25aC; Item- Symbol MAXIMUM CHANNEL PO W ER DISSIPATION CURVE 3SKIJS Unit Diain to source voilage

te 2443 MOTOROLA transistor

Abstract: 1S2210 MOSFET 830 63 ng MRF171
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range

Contextual Info: RF RF2360 Preliminary MICRO-DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations P r o d u c t D e s c r ip tio n

SOT 23 1ft

Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*

Contextual Info: RF RF2317 MICRO-DEVICES LINEAR CATV AMPLIFIER Typ ical A p plications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations The RF2317 is a general purpose, low cost high linearity

FULL WAVE RECTIFIER CIRCUITS

Abstract: NE571D NE570 Audio Dynamic Noise Reduction NE570N NE571N sa571 equivalent NE571 15Hz-20kHz FULL WAVE RECTIFIER -datasheet operational amplifier discrete schematic
Contextual Info: P roduct specification P hilips S em iconductors-Sigrietics RF C om m unications Products Compandor NE570/571/SA571 PIN CONFIGURATION DESCRIPTION FEATURES The NE570/571 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

3SK244

Abstract: 3SK244D U94 marking
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain

Class B power amplifier, 13.56MHz

Abstract: 13.56Mhz rf amplifier 13.56Mhz AMPLIFIER 13.56Mhz class C power amplifier UJ-850 "RF MOSFET" 300W 300w rf amplifier
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz PO WE R MOS IV N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET pm_ The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,

500w class d amplifier

Abstract: n-channel 500w RF power mosfet
Contextual Info: A dvanced P o w er Te c h n o l o g y ARF450 Common Source Push-Pull Pair >u Advanced Information - OTS 71 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

Arco 262 capacitor

Abstract: arco 462 TRIMMER capacitor arco capacitors 462 transistor 1005 oj arco TRIMMER capacitor 262 arco 468 arco capacitors 262 Arco 426 trimmer arco TRIMMER capacitor 463 arco TRIMMER capacitor
Contextual Info: 5642205 M / A - C O M P H I INC 85D 00418 D T - 31 ~ of DV42Q5S n/A-con p h i as inc de | s m e e o s n-channel enhancement-moae RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits ooGoma t | 175mhz 6"25yJ 10dB

AM40-0023

Abstract: DCS-1800
Contextual Info: an A M P com pany Ultra Low Noise pHEMT Dual-Channel Amplifier 1.710 -1.910 GHz AM40-0023 V2.00 Features • • • • • • • CR-5 0.7 dB Typical Noise Figure 14 dB Typical Gain DC Decoupled RF Input and Output Single Bias Configuration SMT Construction

CA2301

Abstract: CA2300 CA2300R CA2301R
Contextual Info: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA CA2300 CA2300R CA2301 CA2301R The RF Line 35-Channel 300 MHz C A T V Input/Output Trunk Amplifiers . . . d e s ig n e d f o r b ro a d b a n d a p p lic a tio n s re q u irin g lo w - d is to r tio n a m p lific a tio n . S p e c ifi­