P-CHANNEL POWER MOSFET 30V Search Results
P-CHANNEL POWER MOSFET 30V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
P-CHANNEL POWER MOSFET 30V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 |
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RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms; | |
MOSFET SOT-23 marking 122
Abstract: 122e mosfet marking 506
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UT7401 OT-23-3 O-236) OT-323 UT7401 OT-23 SC-59) UT7401L-AE2-R UT7401G-AE2-R UT7401L-AE3-R MOSFET SOT-23 marking 122 122e mosfet marking 506 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high |
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UTT100P03 UTT100P03 UTT100P03L-TA3-T UTT100P03G-TA3-T QW-R502-697 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state |
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UT4435-H UT4435-H UT4435G-S08-R QW-R208-053 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced |
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UTT30P04 UTT30P04 O-252 UTT30P04L-TN3-R UTT30P04G-TN3-R QW-R502-613 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s |
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UT30P04 UT30P04 O-252 UT30P04L-TN3-R UT30P04G-TN3-R QW-R502-465 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3P06 Preliminary Power MOSFET 2.2A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. |
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UT3P06 UT3P06 UT3P06L-AG6-R UT3P06G-AG6-R OT-26 QW-R502-673 | |
ESD 141
Abstract: ON10M
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UTT4425 UTT4425 UTT4425L-S08-R UTT4425G-S08-R QW-R502-562 ESD 141 ON10M | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. |
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UT2P06 UT2P06 UT2P06G-AE3-R OT-23 2P06G QW-R502-B01 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low |
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UTT4425 UTT4425 UTT4425L-S08-R QW-R502-562 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low |
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UTT4407 UTT4407 UTT4407L-S08-R UTT4407G-S08-R UTT4407L-S08-T UTT4407G-S08-T QW-R502-554 | |
2P03L
Abstract: 73E-10 73E10 TRANSISTOR S2A RFT2P03L TB334 diode 7723
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RFT2P03L 2P03L 73E-10 73E10 TRANSISTOR S2A RFT2P03L TB334 diode 7723 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -1.4A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. |
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UT2P06 UT2P06 UT2P06L-AE3-R UT2P06G-AE3-R OT-23 QW-R502-B01 | |
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Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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GSM4953S, -30V/-5 -30V/-4 GSM4953SSF Lane11 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can |
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UTT18P06 UTT18P06 O-252 UTT18P06L-TN3-R UTT18P06G-TN3-R UTT18P06L-TN3-T UTT18P06G-TN3-T QW-R502-713 | |
564a
Abstract: UTT4815
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UTT4815 UTT4815 UTT4815L-S08-R UTT4815G-S08-R QW-R502-564 564a | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can |
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UTT15P06 UTT15P06 UTT15P06L-TA3-T UTT15P06G-TA3-T UTT15P06L-TF3-T UTT15P06G-TF3-T UTT15P06L-TM3-T UTT15P06G-TM3-T UTT15P06L-TN3-R UTT15P06G-TN3-R | |
Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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GSM3407AS, -30V/-2 OT-23 Lane11 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can |
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UTT18P06 UTT18P06 UTT18P06L-TN3-T UTT18P06G-TN3-T UTT18P06L-TN3-R UTT18P06G-TN3-R O-252 QW-R502-713. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can |
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UTT15P06 UTT15P06 O-252 UTT15P06L-TN3-R UTT15P06G-TN3-R UTT15P06L-TN3-T UTT15P06G-TN3-T QW-R502-733 | |
Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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GSM3050S, -30V/-9A -30V/-7A -30V/-5A O-252-2L GSM3050SDF O-252-2is Lane11 | |
FDMC4435BZContextual Info: FDMC4435BZ tm P-Channel Power Trench MOSFET -30V, -18A, 20.0mΩ Features General Description Max rDS on = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has |
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FDMC4435BZ FDMC4435BZ | |
gsm39Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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GSM3993, -30V/-3 Lane11 gsm39 |