P-CHANNEL POWER MOSFET 30V Search Results

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3  The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

MOSFET SOT-23 marking 122

Abstract: 122e mosfet marking 506
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3 „ The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3P06 Preliminary Power MOSFET 2.2A, 60V D-S P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.

ESD 141

Abstract: ON10M
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2A, 60V D-S P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

2P03L

Abstract: 73E-10 73E10 TRANSISTOR S2A RFT2P03L TB334 diode 7723
Contextual Info: RFT2P03L Data Sheet July 1999 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

2P03L

Abstract: 2p03
Contextual Info: RFT2P03L Semiconductor Data Sheet October 1998 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can

564a

Abstract: UTT4815
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremely gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can

Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can

Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

FDMC4435BZ

Contextual Info: FDMC4435BZ tm P-Channel Power Trench MOSFET -30V, -18A, 20.0mΩ Features General Description „ Max rDS on = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has